60N10_17 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscN-ChannelMosfetTransistor 60N10
- FEATURES
- DrainCurrent ID=60A@TC=25℃
- DrainSource Voltage- :VDSS=100V(Min)
- FastSwitching Speed
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching mode power supplies
- Generalpurpose poweramplifier
- ABSOLUTEMAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-SourceVoltage(VGS=0) 100 V VGS Gate-SourceVoltage ±20 V ID DrainCurrent-continuous@TC=25℃ 60 A ID(puls) PulseDrainCurrent 180 A Ptot TotalDissipation@TC=25℃ 150 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.83 ℃/W Rthj-a ThermalResistance,JunctiontoAmbient 40 ℃/W
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark2 iscN-ChannelMosfetTransistor 60N10 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0;ID=250µA 100 V VGS(th) GateThresholdVoltage VDS=VGS; ID=250µA 2.0 4.0 V VSD DiodeForwardOn-Voltage IS=60A;VGS=0 2.5 V RDS(on) Drain-SourceOn-Resistance VGS=10V;ID=30A 0.03 Ω IGSS Gate-BodyLeakageCurrent VGS= ±20V;VDS=0 ±100 nA IDSS ZeroGateVoltageDrainCurrent VDS=100V;VGS=0 250 µA tr RiseTime VGS=10V; ID=30A; VDD=50V; RL=50Ω 280 ns td(on) Turn-onDelayTime 126 tf FallTime 210 td(off) Turn-offDelayTime 630