60EPU06 VISHAY

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Document Number: 93021 For technical ques tions, contact: diodes-tech@vishay.com www.vishay.com Revision: 02-Jun-08 1 Ultrafast Soft Recovery Diode,

60 A FRED PtTM

Vishay High Power Products

FEATURES

  • Ultrafast recovery  175 °C operating junction temperature  Designed and qualified for industrial level BENEFITS  Reduced RFI and EMI  Higher frequency operation  Reduced snubbing  Reduced parts count DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. PRODUCT SUMMARY trr (typical) 34 ns IF(AV) 60 A VR 600 V Cathode to base 1 3 Cathode Anode 60EPU06 TO-247AC (modified) TO-247AC 60APU06 Cathode to base Anode Anode 1 3 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage V R 600 V Continuous forward current I F(AV) TC = 116 °C 60 ASingle pulse forward current I FSM TC = 25 °C 600 Maximum repetitive forward current I FRM Square wave, 20 kHz 120 Operating junction and storage temperatures T J, TStg - 55 to 175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage VBR, Vr IR = 100 µA 600 - - V Forward voltage V F IF = 60 A - 1.35 1.68 IF = 60 A, TJ = 125 °C - 1.20 1.42 IF = 60 A, TJ = 175 °C - 1.11 1.30 Reverse leakage current I R VR = VR rated - - 50 µA TJ = 150 °C, VR = VR rated - - 500 Junction capacitance C T VR = 600 V - 39 - pF

www.vishay.com For technical questi ons, contact: diodes-tech@vishay.com Document Number: 93021

2 Revision: 02-Jun-08

Vishay High Power Products Ultrafast Soft Recovery Diode, DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Reverse recovery time t rr IF = 1 A, dIF/dt = 200 A/µs, VR = 30 V - 34 45 nsTJ = 25 °C IF = 60 A dIF/dt = 200 A/µs VR = 200 V -8 1- TJ = 125 °C - 164 - Peak recovery current I RRM TJ = 25 °C - 7.4 - A TJ = 125 °C - 17.0 - Reverse recovery charge Q rr TJ = 25 °C - 300 - nC TJ = 125 °C - 1394 - THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, junction to case RthJC - - 0.63 K/WThermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased -0 . 2- Weight -5 . 5- g -0 . 2-o z . Mounting torque 1.2 (10) - 2.4 (20) N · m (lbf · in) Marking device Case style TO-247AC modified 60EPU06 Case style TO-247AC 60APU06

Document Number: 93021 For technical ques tions, contact: diodes-tech@vishay.com www.vishay.com Revision: 02-Jun-08 3 60EPU06/60APU06 Ultrafast Soft Recovery Diode, Vishay High Power Products Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 1000 0 2.51.51.0 VF - Forward Voltage Drop (V) IF - Instantaneous Forward Current (A) 100 0.5 2.0 TJ = 175 °C TJ = 125 °C TJ = 25 °C 3.0 0.01 0.1 100 0 200 VR - Reverse Voltage (V) IR - Reverse Current (µA) TJ = 175 °C TJ = 125 °C TJ = 25 °C 100 0.001 1000 400300 600500 100 1000 0 500 600 VR - Reverse Voltage (V) CT - Junction Capacitance (pF) 200 TJ = 25 °C 300 400100 0.01 0.1 ton - Rectangular Pulse Duration (s) ZthJC - Thermal Impedance (°C/W) 10 100 0.7 0.5 0.3 0.1 0.05 0.06226 0.32503 0.24271 0.00049 0.01294 0.24310 Ri (°C/W) τi (s) TJ R1 R2 R3 TC τ2 τ3 Ci = τi/Ri Notes: 1. Duty factor D = ton/period 2. Peak TJ = PDM x ZthJC + TC

www.vishay.com For technical questi ons, contact: diodes-tech@vishay.com Document Number: 93021

4 Revision: 02-Jun-08

Vishay High Power Products Ultrafast Soft Recovery Diode, Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Typical Stored Charge vs. dIF/dt Fig. 8 - Typical Reverse Recovery Time vs. dIF/dt Note (1) Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Allowable Case Temperature (°C) IF(AV) - Average Forward Current (A) DC 0 20 40 60 80 100 Square wave (D = 0.50) 80 % rated VR applied See note (1) 120 180 150 04 0 6 0 80 100 Average Power Loss (W) IF(AV) - Average Forward Current (A) D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 100 RMS limit 120 140 100 1000 Qrr (nC) dIF/dt (A/µs) 1500 2500 1000 2000 3000 500 TJ = 125 °C TJ = 25 °C IF = 30 A IF = 60 A 100 1000 trr (ns) dIF/dt (A/µs) 150 250 100 200 300 TJ = 125 °C TJ = 25 °C IF = 30 A IF = 60 A

Document Number: 93021 For technical ques tions, contact: diodes-tech@vishay.com www.vishay.com Revision: 02-Jun-08 5 60EPU06/60APU06 Ultrafast Soft Recovery Diode, Vishay High Power Products Fig. 9 - Reverse Recovery Parameter Test Circuit Fig. 10 - Reverse Recovery Waveform and Definitions IRFP250 D.U.T. L = 70 µH VR = 200 V 0.01 Ω G D S dIF/dt adjust Qrr

0.5 IRRM

dI(rec)M/dt

0.75 IRRM

(1) (2) (3) (4) (5) (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM trr x IRRM 2Qrr = (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr

www.vishay.com For technical questi ons, contact: diodes-tech@vishay.com Document Number: 93021

6 Revision: 02-Jun-08

Vishay High Power Products Ultrafast Soft Recovery Diode, ORDERING INFORMATION TABLE 1 - Current rating (60 = 60 A) 2 - Circuit configuration: E = Single diode, 2 pins A = Single diode, 3 pins P = TO-247AC modified 4 - Type of silicon: U = Ultrafast recovery 5 - Voltage rating (06 = 600 V) 6 - None = Standard production PbF = Lead (Pb)-free Device code 513 24

60 E P U 06 -

LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95001 Part marking information http://www.vishay.com/doc?95006

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.