6035A KIA
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Technical content
11A,350V N-CHANNELMOSFET 1.Description ThisPowerMOSFETisproducedusingKIA\`sadvancedplanarstripeDMOStechnology.This advancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperior switchingperformance,andwithstandhighenergypulseintheavalancheandcommutationmode.These devicesarewellsuitedforhighefficiencyswitchedmodepowersupplies,activepowerfactorcorrection basedonhalfbridgetopology. 2.Features n RDS(ON)=0.38Ω@VGS=10V. n Low gate charge (typical 15nC) n High ruggedness n Fast switching capability n Avalanche energy specified n Improved dv/dt capability 3. Pinconfiguration 1of5 Rev1.0JAN2015 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
11A,350V N-CHANNELMOSFET 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisenoted) Parameter Symbol Rating Units TO-220 TO-252 Drain-sourcevoltage VDSS 350 V Gate-sourcevoltage VGSS ±20 V Draincurrentcontinuous TC=25ºC ID 11 11* A TC=100ºC 6.6 6.6* A Draincurrentpulsed(note1) IDM 36 A AvalancheEnlsed Repetitive(note1) EAR 9.91 mJ Singlepulse(note2) EAS 423 mJ Avalanchecurrent(note1) IAR 9.0 A Peakdioderecoverydv/dt(note3) dv/dt 4.5 V/ns Totalpowerdissipation TC=25ºC PD 99 W Derateabove25 ºC 0.79 W/ ºC Operatingandstoragetemperaturerange TJ,T STG -55~+150 ºC Maximumleadtemperatureforsoldering Purposes,1/8\\formcasefor5seconds TL 300 ºC *Draincurrentlimitedbymaximumjunctiontemperature. 5. Thermalcharacteristics Parameter Symbol Rating Unit Thermalresistance,Junction-amient RthJA 62.5 ºC/W Thermalresistance,case-to-sinktyp. RthJS 0.5 ºC/W Thermalresistance,Junction-case RthJC 1.26 ºC/W 2of5 Rev1.0JAN2015 KIA SEMICONDUCTORS 6035AKIA SEMICONDUCTORS KIA SEMICONDUCTORS
11A,350V N-CHANNELMOSFET 6. Electricalcharacteristics (TC=25 ºC,unlessotherwisenoted) Parameter Symbol Testconditions Min Typ Max Unit Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 350 - - V Zerogatevoltagedraincurrent IDSS VDS=350V,V GS=0V - - 1 μA VDS=280V,T C=125ºC - - 10 μA Gate-bodyleakage current Forward IGSS VGS=20V,V DS=0V - - 10 uA Reverse VGS=-20V,VDS=0V - - -10 uA Breakdownvoltagetemperature coefficient △BVDSS/△TJ ID=250μA - 0.35 - V/ ºC Oncharacteristics Gatethresholdvoltage VGS(TH) VDS=V GS ID=250μA 2.0 - 4.0 V Staticdrain-sourceon-resistance RDS(ON) VDS=10V,ID=4.5A - 0.38 0.48 Ω Forwardtransconductance gFS VDS=40V,ID=4.5A(note4) - 7.8 - S Dynamiccharacteristics Inputcapacitance CISS VDS=25V,VGS=0V, f=1MHz - 844 - pF Outputcapacitance COSS - 162 - pF Reversetransfercapacitance CRSS - 4 - pF Switchingcharacteristics Turn-ondelaytime tD(ON) VDD=175V,ID=9.0A, RG=25Ω(note4,5) - 25 - ns Risetime tR - 23.5 - ns Turn-offdelaytime tD(OFF) - 77 - ns Falltime tF - 47.5 - ns Totalgatecharge QG VDS=280V,ID=9.0A VGS=10V(note4,5) - 15 - nC Gate-sourcecharge QGS - 4 - nC Gate-draincharge QGD - 5 - nC Drain-sourcediodecharacteristics drain-sourcediodeforwardvoltage VSD VGS=0V,ISD=11A - - 1.4 V Continuousdrain-sourcecurrent IS - - 11 A Pulseddrain-sourcecurrent ISM* 36 A Reverserecoverytime tRR IS=9.0A dISD/dt=100A/μs(note4) 317 - ns Reverserecoverycharge QRR 2.5 - μC Notes:1.repetitiverating:pulsewidthlimitedbymaximumjunctiontemperature 2.L=6.3mH,IAS=9.0A,VDD=50V,RG=25Ω,startingT J=25ºC 3.ISD<11A,di/dt<100A/μs,VDD<BVDSS,startingT J=25ºC 4.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 5.Essentiallyindependentofoperatingtemperature 3of5 Rev1.0JAN2015 KIA SEMICONDUCTORS 6035AKIA SEMICONDUCTORS KIA SEMICONDUCTORS
11A,350V N-CHANNELMOSFET 7.Typicalcharacteristics 4of5 Rev1.0JAN2015 KIA SEMICONDUCTORS 6035AKIA SEMICONDUCTORS KIA SEMICONDUCTORS
11A,350V N-CHANNELMOSFET 5of5 Rev1.0JAN2015 KIA SEMICONDUCTORS 6035AKIA SEMICONDUCTORS KIA SEMICONDUCTORS