5LP01M_12 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 7

Technical content

Features

  • Low ON-resistance
  • Ultrahigh-speed switching
  • 2.5V drive Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -50 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D - -0.07 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -0.28 A Allowable Power Dissipation P D 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions unit : mm (typ) 7023A-010

71112 TKIM/42006PE MSIM TB-00002113/31000 TS (KOTO) TA-2040

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network Product & Package Information

  • Package : MCP
  • JEITA, JEDEC : SC-70, SOT-323 Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection SANYO Semiconductors DATA SHEET XB LOT No. LOT No. TL 1 : Gate 2 : Source 3 : Drain SANYO : MCP 2.0 0.4250.4250.3 0.65 2.10.9 1.25 0.3 0.2 0 to 0.08 0.15 5LP01M-TL-E 5LP01M-TL-H

No.6135-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID= - -1mA, VGS=0V - -50 V Zero-Gate Voltage Drain Current I DSS VDS= - -50V, VGS=0V - -1 μA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS= - -10V, ID= - -100μA - -0.4 - -1.4 V Forward Transfer Admittance | yfs | VDS= - -10V, ID= - -40mA 70 100 mS Static Drain-to-Source On-State Resistance RDS(on)1 I D= - -40mA, VGS= - -4V 18 23 Ω RDS(on)2 I D= - -20mA, VGS= - -2.5V 20 28 Ω RDS(on)3 I D= - -5mA, VGS= - -1.5V 30 60 Ω Input Capacitance Ciss VDS= - -10V, f=1MHz 7.4 pF Output Capacitance Coss 4.2 pF Reverse Transfer Capacitance Crss 1.3 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 20 ns Rise Time tr 35 ns Turn-OFF Delay Time td(off) 160 ns Fall Time tf 150 ns Total Gate Charge Qg VDS= - -10V, VGS= - -10V, ID= - -70mA 1.40 nC Gate-to-Source Charge Qgs 0.16 nC Gate-to-Drain “Miller” Charge Qgd 0.23 nC Diode Forward Voltage VSD IS= - -70mA, VGS=0V - -0.85 - -1.2 V Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 5LP01M-TL-E MCP 3,000pcs./reel Pb Free 5LP01M-TL-H MCP 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% --4V VIN P.G 50Ω G D ID= --40mA RL=625Ω VDD= --25V VOUT 5LP01M S VIN

No.6135-3/7 ID -- VDS ID -- VGS Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A RDS(on) -- VGS RDS(on) -- ID Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --0.07 --0.06 --0.05 --0.04 --0.03 --0.02 --0.01 VGS= --1.5V --2.0V --4.0V --2.5V --0.14 --0.12 --0.10 --0.08 --0.06 --0.04 --0.02 VDS= --10V --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 Ta=25°C --0.01 --0.123 5 7 23 IT00090 IT00092 IT00091 IT00093 Ta=75°C Ta= --25 25°C --25°C --3.5V 25 --20mA ID= --40mA VGS= --4V --6.0V | yfs | -- IDRDS(on) -- Ta RDS(on) -- ID RDS(on) -- ID Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S Ambient Temperature, Ta -- °C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --0.01 0.01 --0.123 5 7 23 0.1 VDS= --10V --60 --40 --20 40 60 80 100 120 140 160 IT00096 IT00097 ID= --20mA, V GS = --2.5V ID= --40mA, V GS = --4.0V Ta= --25°C 75°C 25°C --0.01 --0.123 5 7 23 100 VGS= --2.5V --0.001 --0.0123 5 7 23 VGS= --1.5V IT00094 IT00095 Ta=75°C 25°C --25°C Ta=75°C 25°C --25°C

No.6135-4/7 SW Time -- IDIS -- VSD Diode Forward V oltage, VSD -- V Source Current, IS -- A Drain Current, ID -- A Switching Time, SW Time -- ns VGS -- QgCiss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF Gate-to-Source V oltage, VGS -- V Drain-to-Source V oltage, VDS -- V Total Gate Charge, Qg -- nC --1 --2 0.2 --3 --4 --5 --6 --7 0.60.4 --8 --9 1.00.8 --10 1.41.2 1.6 VDS= --10V ID= --70mA --0.01 --0.123 5 7 100 1000 VDD= --25V VGS = --4V 0.1 1.0 --10--5 --20--15 --30 --25 100 --40--35 --50 --45 f=1MHz --0.5 --0.01 --0.1 --1.2 VGS=0V IT00098 IT00100 IT00101 IT00099 Ta=75 --25 Ciss Coss Crss td(on) td(off) tr tf PD -- Ta Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W 20 40 0.05 0.10 0.15 80 100 120 0.20 140 160 IT00102

No.6135-5/7 Embossed Taping Specifi cation 5LP01M-TL-E, 5LP01M-TL-H

No.6135-6/7 Outline Drawing Land Pattern Example 5LP01M-TL-E, 5LP01M-TL-H Mass (g) Unit 0.006 * For reference mm Unit: mm 0.65 0.65 2.1 0.7 1.0

No.6135-7/7PS This catalog provides information as of July, 2012. Specifi cations and information herein are subject to change without notice. Note on usage : Since the 5LP01M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.