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  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

  • Low ON-resistance
  • Ultrahigh-speed switching
  • 2.5V drive Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage V DSS 50 V Gate to Source Voltage V GSS ±10 V Drain Current (DC) I D 0.1 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% 0.4 A Allowable Power Dissipation P D 0.25 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions unit : mm (typ) 7013A-013 Ordering & Package Information Device Package Shipping memo 5LN01C-TB-E CP SC-59, TO-236, SOT-23, TO-236AB 3,000pcs./ reel Pb-Free 5LN01C-TB-H CP SC-59, TO-236, SOT-23, TO-236AB 3,000pcs./ reel Pb-Free and Halogen Free Packing Type: TB Marking Electrical Connection 1 : Gate 2 : Source 3 : Drain CP 1.5 2.51.1 0.3 0.05 2.9 0.95 0.4 0.1 0.50.5 5LN01C-TB-E 5LN01C-TB-H TB YB LOT No. LOT No. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t he Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

No.6555-2/6 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain to Source Breakdown Voltage V (BR)DSS ID=1mA, VGS=0V 50 V Zero-Gate Voltage Drain Current I DSS VDS=50V, VGS=0V 1 μA Gate to Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS=10V, ID=100μA 0.4 1.3 V Forward Transfer Admittance | yfs | VDS=10V, ID=50mA 0.13 0.18 S Static Drain to Source On-State Resistance RDS(on)1 I D=50mA, VGS=4V 6 7.8 Ω RDS(on)2 I D=30mA, VGS=2.5V 7.1 9.9 Ω RDS(on)3 I D=10mA, VGS=1.5V 10 20 Ω Input Capacitance Ciss VDS=10V, f=1MHz 6.6 pF Output Capacitance Coss 4.7 pF Reverse Transfer Capacitance Crss 1.7 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 18 ns Rise Time tr 42 ns Turn-OFF Delay Time td(off) 190 ns Fall Time tf 105 ns Total Gate Charge Qg VDS=10V, VGS=10V, ID=100mA 1.57 nC Gate to Source Charge Qgs 0.20 nC Gate to Drain “Miller” Charge Qgd 0.32 nC Diode Forward Voltage VSD IS=100mA, VGS=0V 0.85 1.2 V Switching Time Test Circuit PW=10μs D.C.≤1% VIN P.G 50Ω G S D ID=50mA RL=500Ω VDD=25V VOUT 5LN01C VIN

No.6555-3/6 Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω 0.02 0.01 0.04 0.03 0.06 0.05 0.08 0.07 0.2 0.10 0.09 0.4 0.6 0.8 1.0 Drain to Source V oltage, VDS -- V ID -- VDS Drain Current, ID -- A 3.5V 6.0V 2.0V 2.5V 4.0V 3.0V 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 Gate to Source V oltage, VGS -- V ID -- VGS Drain Current, ID -- A VDS=10V Ta= --25 012 34 56 789 1 0 Gate to Source V oltage, VGS -- V RDS(on) -- VGS Ta=25°C 0.01 1.0 0.123 5 7 2 100 Drain Current, ID -- A RDS(on) -- ID VGS=4V --25°C 25°C Ta=75°C IT00054 IT00055 IT00056 IT00057 VGS=1.5V ID=30mA 50mA Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C RDS(on) -- Ta ID=30mA, V GS =2.5V ID=50mA, V GS=4.0V 0.01 0.01 0.123 5 7 2 1.0 0.1 Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S | yfs | -- ID VDS=10V IT00060 IT00061 Ta= --25 25°C75°C 0.01 1.0 0.123 5 7 2 100 Drain Current, ID -- A RDS(on) -- ID VGS=2.5V --25°C 25°C Ta=75°C 0.001 1.0 0.0123 5 7 2 100 Drain Current, ID -- A RDS(on) -- ID VGS=1.5V IT00058 IT00059 --25°C 25°C Ta=75°C

No.6555-4/6 0.01 0.1 Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD VGS=0V --25 °CTa=75 10 15 100 1.0 20 25 30 35 40 45 50 Drain to Source V oltage, VDS -- V Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF Ciss Coss Crss f=1MHz 0.01 0.123 5 7 1000 100 Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns VDD=25V VGS=4V td(off) td(on) Total Gate Charge, Qg -- nC VGS -- Qg Gate to Source V oltage, VGS -- V VDS=10V ID=100mA IT00062 IT00063 IT00064 IT00065 tr tf 0 20 40 60 100 120 140 0.3 0.25 0.2 0.05 0.1 0.15 160 Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W IT02006

No.6555-5/6 Outline Drawing Land Pattern Example 5LN01C-TB-E, 5LN01C-TB-H Mass (g) Unit 0.013 * For reference mm Unit: mm 0.950.95 1.0 2.4 0.8

PS No.6555-6/6 Note on usage : Since the 5LN01C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent covera ge may be accessed at warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.