5HP01N

5HP01N SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -50 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D - -0.07 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% - -0.28 A Allowable Power Dissipation P D 0.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =- -1mA, VGS =0 - -50 V Zero-Gate Voltage Drain Current I DSS VDS =- -50V, VGS =0 - -10 µA Gate-to-Sourse Leakage Current I GSS VGS =±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =- -10V, ID =- -100µA - -1 - -2.5 V Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 5HP01N Package Dimensions unit : mm 2178 [5HP01N]

72600 TS IM TA-1974

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 1 : Source 2 : Drain 3 : Gate SANYO : NP 5.0 4.0 0.5 0.6 2.0 14.0 5.0 0.45 0.45 4.0 0.44 1.31.3 123

No.6642-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Forward Transfer Admittance yfs VDS =- -10V, ID =- -40mA 50 70 mS R DS (on)1 I D =- -40mA, VGS =- -10V 17 22 ΩStatic Drain-to-Source On-State Resistance R DS (on)2 I D =- -20mA, VGS =- -4V 23 32 Ω Input Capacitance Ciss V DS =- -10V, f=1MHz 6.2 pF Output Capacitance Coss V DS =- -10V, f=1MHz 4.0 pF Reverse Transfer Capacitance Crss V DS =- -10V, f=1MHz 1.3 pF Turn-ON Delay Time t d(on) See specified Test Circuit 13 ns Rise Time t r See specified Test Circuit 10 ns Turn-OFF Delay Time t d(off) See specified Test Circuit 100 ns Fall Time t f See specified Test Circuit 150 ns Total Gate Charge Qg V DS =- -10V, VGS =- -10V, ID =- -70mA 1.32 nC Gate Source Charge Qgs V DS =- -10V, VGS =- -10V, ID =- -70mA 0.17 nC Gate Drain Charge Qgd V DS =- -10V, VGS =- -10V, ID =- -70mA 0.34 nC Diode Forward Voltage V SD IS=- -70mA, VGS =0 0.85 1.2 V Marking : XC Switching Time Test Circuit PW=10 µs D.C.≤1% --10V VIN P. G 50Ω G D ID = --40mA R L=625Ω VDD = --25V VOUT 5HP01N S VIN --0.01 --0.02 --0.03 --0.04 --0.06 --0.07 --0.4 --0.05 ID -- VDS V GS = --2.5V --3.0V --8.0V --6.0V --10.0V --4.0V --0.04 --0.02 --1 --0.06 --0.08 --2 --0.10 --0.12 --0.14 --4--3 --5 --6 ID -- VGS V DS = --10V --2 --3 --4 --5 --6 --7 --8 --9 --10 R DS (on) -- VGS Ta=25°C ID = --20mA --40mA R DS (on) -- ID IT00103 IT00104 IT00105 IT00106 Ta= --25 Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS (on) -- Ω --0.01 --0.123 5 7 23 100 V GS = --10V --25°C 25°C Ta=75°C

No.6642-3/4 0.2 --1 --2 0.4 --3 --4 0.6 --5 --6 --7 0.8 --8 1.0 --9 1.2 --10 1.4 1.6 VGS -- Qg V DS = --10V ID = --0.07A 0.1 1.0 --15--5 --20--10 --30 --25 100 --40--35 --50 --45 Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF f=1MHz IT00113 IT00112 Ciss Coss Crss --0.01 1.0 --0.123 5 7 1000 100 SW Time -- ID IT00111 td(on) tr V DD = --25V V GS = --10V tf td(off) IF -- VSDyfs -- ID IT00109 IT00110 --60 --40 --20 0 20 40 60 80 100 120 140 160 R DS (on) -- Ta ID= --20mA, V GS = --4V ID= --40mA, V GS= --10V R DS (on) -- ID IT00107 IT00108 PD -- Ta Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Ambient Temperature, Ta -- °C Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Forward Current, IF -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Gate-to-Sourse V oltage, VGS -- V Total Gate Charge, Qg -- nC Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W IT02383 0.5 0.3 0.2 0.1 0.4 0 40 120 160 8020 100 140 60 --0.5 --0.01 --0.1 V GS = 0 --0.01 0.01 --0.123 5 7 23 0.1 1.0 V DS = --10V Ta= --25°C --25 Ta=75 25°C 75°C --0.01 --0.123 5 7 2 1000 100 V GS = --4V --25°C Ta=75°C 25°C

No.6642-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2000. Specifications and information herein are subject to change without notice. PS Note on usage : Since the 5HP01N is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects.