5HN01M

5HN01M SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• Low ON resistance.
• Ultrahigh-speed switching.
• 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS 50 V Gate-to-Source Voltage V GSS ±20 V Drain Current (DC) I D 0.1 A Drain Current (Pulse) I DP PW ≤10µs, duty cycle≤1% 0.4 A Allowable Power Dissipation P D 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID =1mA, VGS =0 50 V Zero-Gate Voltage Drain Current I DSS VDS =50V, VGS =0 10 µA Gate-to-Sourse Leakage Current I GSS VGS =±16V, VDS =0 ±10 µA Cutoff Voltage V GS (off) V DS =10V, ID =100µA 1 2.4 V Forward Transfer Admittance yfs VDS =10V, ID =50mA 85 120 mS R DS (on)1 I D =50mA, VGS =10V 5.8 7.5 ΩStatic Drain-to-Source On-State Resistance R DS (on)2 I D =30mA, VGS =4V 7.5 10.5 Ω Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 5HN01M Package Dimensions unit : mm 2158 [5HN01M]

90100 TS IM TA-2044

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 1 : Gate 2 : Source 3 : Drain SANYO : MCP 0.3 0.650.65 2.0 0.425 1.250 2.1 0.425 0.15 0 to 0.1 0.2 0.3 0.6 0.9

No.6136-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Input Capacitance Ciss V DS =10V, f=1MHz 6.2 pF Output Capacitance Coss V DS =10V, f=1MHz 4.4 pF Reverse Transfer Capacitance Crss V DS =10V, f=1MHz 1.5 pF Turn-ON Delay Time t d(on) See specified Test Circuit 10 ns Rise Time t r See specified Test Circuit 11 ns Turn-OFF Delay Time t d(off) See specified Test Circuit 105 ns Fall Time t f See specified Test Circuit 75 ns Total Gate Charge Qg V DS =10V, VGS =10V, ID =100mA 1.40 nC Gate-to-Source Charge Qgs V DS =10V, VGS =10V, ID =100mA 0.21 nC Gate-to-Drain “Miller” Charge Qgd V DS =10V, VGS =10V, ID =100mA 0.34 nC Diode Forward Voltage V SD IS=100mA, VGS =0 0.85 1.2 V Marking : YC Switching Time Test Circuit PW=10 µs D.C.≤1% 10V VIN P. G 50Ω G D ID =50mA R L=500Ω VDD =25V VOUT 5HN01M S VIN 0.02 0.04 0.06 0.08 0.10 ID -- VDS V GS =2.0V 2.5V 3.0V4.0V 8.0V 10.0V 6.0V 012345 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 ID -- VGS V DS =10V Ta= --25 01234 789 1 0 R DS (on) -- VGS Ta=25°C ID =30mA 50mA 0.01 1.0 0.123 5 7 23 100 R DS (on) -- ID V GS =10V --25°C 25°C Ta=75°C IT00042 IT00044 IT00045 IT00043Gate-to-Source V oltage, VGS -- V Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Drain Current, ID -- A Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Gate-to-Source V oltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS (on) -- Ω

No.6136-3/4 0.1 1.0 10 15 100 20 25 30 35 40 45 50 Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF Ciss Coss Crss f=1MHz 0.01 1.0 0.123 5 7 1000 100 SW Time -- ID td(on) tr tf td(off) 0.3 0.6 0.9 1.2 1.5 VGS -- Qg V DS =10V ID =0.1A V DD =25V V GS =10V IT00050 IT00052 0.05 20 40 60 80 0.10 0.15 100 0.20 120 140 160 PD -- Ta IT02381 IT00051 0.01 0.01 0.123 5 7 2 3 0.1 1.0 yfs -- ID V DS =10V 0.01 0.1 V GS =0 IF -- VSD 25°C Ta= --25 75°C Ta= 75 --25 IT00048 IT00049 --60 --40 --20 0 20 40 60 80 100 120 140 160 R DS (on) -- Ta ID=30mA, V GS =4V ID=50mA, V GS=10V 0.01 1.0 0.123 5 7 2 3 100 R DS (on) -- ID V GS =4V Ta=75°C 25°C --25°C IT00046 IT00047Drain Current, ID -- A Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Ambient Temperature, Ta -- °C Static Drain-to-Source On-State Resistance, RDS (on) -- Ω Drain Current, ID -- A Forward Transfer Admittance, yfs -- S Diode Forward V oltage, VSD -- V Forward Current, IF -- A Drain Current, ID -- A Switching Time, SW Time -- ns Drain-to-Source V oltage, VDS -- V Gate-to-Sourse V oltage, VGS -- V Total Gate Charge, Qg -- nC Ambient Temperature, Ta -- °C Allowable Power Dissipation, PD -- W

No.6136-4/4 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co. , Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 2000. Specifications and information herein are subject to change without notice. PS Note on usage : Since the 5HN01M is designed for high-speed switching applications, please avoid using this device in the vicinity of highly charged objects.