SUD50P06-15 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 IscP-ChannelMOSFETTransistor SUD50P06-15
- FEATURES
- WithTo-252(DPAK)package
- Lowinputcapacitanceandgate charge
- Lowgateinputresistance
- 100% avalanchetested
- MinimumLot-to-Lotvariations forrobustdevice performanceandreliable operation
- APPLICATIONS
- Switching applications
- Motorcontorl
- DC-DCconventers
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage -60 V VGSS Gate-SourceVoltage ±20 V ID DrainCurrent-Continuous Tc=25℃ Tc=70℃ -50 -27.5 A IDM DrainCurrent-SinglePulsed -80 A PD TotalDissipation@TC=25℃ 113 W Tj Max.OperatingJunctionTemperature 150 ℃ Tstg StorageTemperature -55~150 ℃
- THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-casethermalresistance 1.1 ℃/W Rth(ch-a) Channel-to-ambientthermalresistance 50 ℃/W
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 IscP-ChannelMOSFETTransistor SUD50P06-15 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-SourceBreakdownVoltage VGS=0V;ID=-0.25mA -60 V VGS(th) GateThresholdVoltage VDS=VGS;ID=-0.25mA -1.0 -3.0 V RDS(on) Drain-SourceOn-Resistance VGS=-10V;ID=-17A 12 15 mΩ IGSS Gate-SourceLeakageCurrent VGS= ±20V;VDS=0V ±0.1 μA IDSS Drain-SourceLeakage Current VDS=-60V;VGS=0V;Tc=25℃ Tc=125℃ -50 μA VSDF Diodeforwardvoltage ISD=-50A,VGS =0V -1.6 V