50P06

SUD50P06-15L VISHAY

Document overview

• Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
• PDF pages: 4

Technical content

FEATURES

/C0068TrenchFET/C0114 Power MOSFET /C0068175/C0095C Junction Temperature

APPLICATIONS

/C0068Automtoive 12-V Boardnet SUD50P06-15L Vishay SiliconixNew Product Document Number: 72250 S-31673—Rev. B 11-Aug-03 www.vishay.com P-Channel 60-V (D-S), 175/C0095C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (/C0087) ID (A) -60 0.015 @ VGS = -10 V -50 d -60 0.020 @ VGS = -4.5 V -50 S G D P-Channel MOSFET TO-252 SGD Top View Drain Connected to Tab ABSOLUTE MAXIMUM RATINGS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 VGate-Source Voltage VGS /C003420 V Continuous Drain Current TC = 25/C0095C ID -50d Continuous Drain Current (TJ = 175/C0095C) TC = 125/C0095C ID -39 APulsed Drain Current IDM -80 A Avalanche Current IAR -50 Repetitive Avalanche Energya L = 0.1 mH EAR 125 mJ Power Dissipation TC = 25/C0095C PD 136c WPower Dissipation TA = 25/C0095C PD 3b, c W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 /C0095C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Jt i t A b i t b t /C0118 10 sec R 15 18 Junction-to-Ambientb Steady State RthJA 40 50 /C0095C/W Junction-to-Case RthJC 0.82 1.1 C/W Notes: a. Duty cycle /C0118 1%. b. When mounted on 1” square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited.

Vishay Siliconix New Product www.vishay.com Document Number: 72250 S-31673—Rev. B 11-Aug-03 SPECIFICATIONS (TJ = 25/C0095C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = -250 /C0109A -60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250 /C0109A -1 -3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = /C003420 V /C0034100 nA VDS = -48 V, VGS = 0 V -1 Zero Gate Voltage Drain Current IDSS VDS = -48 V, VGS = 0 V, TJ = 125/C0095C -50 /C0109/C0065g DSS VDS = -48 V, VGS = 0 V, TJ = 175/C0095C -150 /C0109 On-State Drain Currenta ID(on) VDS = -5 V, VGS = -10 V -50 A VGS = -10 V, ID = -17 A 0.012 0.015 Drain Source On State Resistancea rDS( ) VGS = -10 V, ID = -50 A, T J = 125/C0095C 0.025 /C0087Drain-Source On-State Resistancea rDS(on) VGS = -10 V, ID = -50 A, T J = 175/C0095C 0.030 /C0087 VGS = -4.5 V, ID = -14 A 0.020 Forward Transconductancea gfs VDS = -15 V, ID = -17 A 61 S Dynamicb Input Capacitance Ciss 4950 Output Capacitance Coss VGS = 0 V, VDS = -25 V, f = 1 MHz 480 pF Reversen Transfer Capacitance Crss 405 Total Gate Chargec Qg 110 165 Gate-Source Chargec Qgs VDS = -30 V, VGS = -10 V, ID = -50 A 19 nC Gate-Drain Chargec Qgd DS , GS , D Turn-On Delay Timec td(on) 15 23 Rise Timec tr VDD = -30 V, RL = 0.6 /C0087 70 105 ns Turn-Off Delay Timec td(off) VDD = 30 V , RL = 0.6 /C0087 ID /C0093 -50 A, V GEN = -10 V, RG = 6 /C0087 175 260 ns Fall Timec tf D GEN G 175 260 Source-Drain Diode Ratings and Characteristics (TC = 25/C0095C)b Continuous Current Is -50 A Pulsed Current ISM -80 A Forward Voltagea VSD IF = -50 A, V GS = 0 V 1.0 1.6 V Reverse Recovery Time trr IF = -50 A, di/dt = 100 A//C0109s 45 70 ns Notes: a. Pulse test; pulse width /C0118 300 /C0109s, duty cycle /C0118 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.

Vishay SiliconixNew Product Document Number: 72250 S-31673—Rev. B 11-Aug-03 www.vishay.com TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 0 20 40 60 80 100 120 0.000 0.005 0.010 0.015 0.020 0.025 0 1 02 03 04 05 06 07 08 0 1000 2000 3000 4000 5000 6000 7000 8000 0 1 02 03 04 05 06 0 100 0 1 02 03 04 05 06 0 Output Characteristics Transfer Characteristics Capacitance Gate Charge Transconductance On-Resistance vs. Drain Current VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D- Gate-to-Source Voltage (V) - On-Resistance ( Qg - Total Gate Charge (nC) ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) rDS(on) /C0087)V GS VGS - Gate-to-Source Voltage (V) - Transconductance (S)g fs 25/C0095C -55/C0095C TC = 125/C0095C VDS = 30 V ID = 50 A VGS = 10 V Ciss Coss Crss TC = -55 /C0095C 25/C0095C 125/C0095C 3 V 012345 VGS = 4.5 V VGS = 10 thru 4 V

Vishay Siliconix New Product www.vishay.com Document Number: 72250 S-31673—Rev. B 11-Aug-03 TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage (Normalized) - On-Resistance ( TJ - Junction Temperature (/C0095C) V SD - Source-to-Drain Voltage (V) rDS(on) /C0087) - Source Current (A)I S 100 VGS = 10 V ID = 17 A TJ = 25/C0095C TJ = 150/C0095C THERMAL RATINGS 1.00 10.00 100.00 0.1 1.0 10.0 100.0 Safe Operating Area 0 25 50 75 100 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (sec) 0.1 0.01 10-4 10-3 10-2 10-1 Normalized Effective Transient Thermal Impedance Maximum Avalanche and Drain Current vs. Case Temperature TC - Case Temperature (/C0095C) V DS - Drain-to-Source Voltage (V) - Drain Current (A)I D - Drain Current (A)I D 0.2 0.1 0.05 0.02 Duty Cycle = 0.5 TC = 25/C0095C Single Pulse Single Pulse IDM Limited ID(on) Limited BVDSS Limited rDS(on) Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001