50N30

50N30 NELLSEMI

Document overview

• Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 7

Technical content

50A, 300Volts

DESCRIPTION

Low reverse transfer capacitance (C = 60pF typical)RSS R = 0.080Ω @ V = 10V DS(ON) GS Ultra low gate charge(65nC typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature

FEATURES

I (A)D 50 V (V)DSS 300 0.080 @ V = 10VGS R (Ω)DS(ON) Q (nC) typicalG UNIT V /ns V °C/W A mJ ºC -55 to 150 VALUE 300 ±20 150 300 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)C T =25°C to 150°CJ TEST CONDITIONS R =20KΩGS T =25°C C T =100°C C Operation junction temperature Storage temperature Peak diode recovery dv/dt(Note 3) PARAMETER Pulsed Drain current(Note 1) Continuous Drain Current Total power dissipation Gate to Source voltage Drain to Gate voltage Drain to Source voltage SYMBOL VDGR VDSS dv/dt VGS IDM TSTG PD ID TJ TL . .lbf in (N m) 300Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw -55 to 150 Note: 1. Repetitive rating: pulse width limited by junction temperature. 10 (1.1) 1.6mm from case IAR Avalanche current(Note 1) 50 2.l =50A, L=0.1mH, V =50V, R =25Ω, starting T = 25°C.AS DD GS J 1500Single pulse avalanche energy(Note 2)EAS 3.I ≤ 50A, di/dt ≤ 200A/µs, V ≤ V , T °C.SD DD (BR)DSS J ≤ 150 Linear derating factor above T =25°C C 50Repetitive avalanche energy(Note 1)EAR l =50A, R =10VAR GS=50Ω, V GS l =50A, =0.1mHAS L W www.nellsemi.com Page 1 of 7 They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits, battery chargers, DC choppers, temperature and lighting controls and general purpose switching applications. The Nell 50N30 is a three-terminal silicon device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 300V, and max. threshold voltage of 6.5 volts. 690 5.8 T =25°C C D (Drain) G (Gate) S (Source) TO-247AB (50 )N30C G D S

UNITMIN. 0.18 THERMAL RESISTANCE PARAMETER Thermal resistance, junction to case SYMBOL Rth(j-c) TYP. MAX. ºC/W Thermal resistance, junction to ambientRth(j-a) UNIT V ns μA pF nC MAX. 100 300 -100 100 0.35 3160 0.17 600 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)C I = 1mA, D V = 0VGS TEST CONDITIONS I = 1mA, D V =VDS GS V =300V, V =0V DS GS T =25°C C Fall time Gate to source reverse leakage current Input capacitance Total gate charge Output capacitance PARAMETER Rise time Gate to source forward leakage current Turn-on delay time Gate input resistance Breakdown voltage temperature coefficient Drain to source breakdown voltage Turn-off delay time SYMBOL CISS ▲ ▲V /(BR)DSS TJ V(BR)DSS IGSS QG tr tf QGS 22Gate to source charge Drain to source leakage currentIDSS COSS RG td(ON) td(OFF) V/ºC Ω nA T =125°C C TYP.MIN. V =150V, DD (Note1,2) V =10VGS I =25A, R =2Ω D GS V =25V, V =0V, f=1MHzDS GS V = -20V, V = 0VGS DS V = 20V, V = 0VGS DS V =240V, V =0V DS GS OFF CHARACTERISTICS ON CHARACTERISTICS DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS V = 150V, DD (Note1,2) V =10VGS I =25A, D 0.080Static drain to source on-state resistanceRDS(ON) V =10V, l =25A GS D 3.5 V6.5V =V , I =4mA GS DS DGate threshold voltageVGS(TH) Gate to drain charge (Miller charge)QGD 32 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)C SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT VSD Diode forward voltage I = 50A, V = 0VSD GS 1.4 V Is (IsD) Continuous source to drain current Integral reverse P-N junction diode in the MOSFET D (Drain) G (Gate) S (Source) A ISM Pulsed source current 200 trr Reverse recovery time 250 nsI = 25A, V = 0V, SD GS dI /dt = 100A/µs FQrr Reverse recovery charge 0.95 μC Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. www.nellsemi.com Page 2 of 7 50N30 Series 29Forward transconductancegfs V = 20V, l = 25A DS D S Reverse transfer capacitanceCRSS 60 Ω

ORDERING INFORMATION SCHEME MOSFET series Current rating, ID Voltage rating, VDS 50 = 50A 30 = 300V

50 N 30 C

N = N-Channel C = TO-247AB ■ TEST CIRCUITS Fig.1A Peak diode recovery dv/dt test circuit Fig.1B Peak diode recovery dv/dt waverforms D.U.T. + VDS RG VGS VDD Same Type as D.U.T. Driver dv/dt controlled by RG* l controlled by pulse periodSD* D.U.T.-Device under test* L Period P.W. VGS (Driver) P.W. Period VDD lSD (D.U.T) (D.U.T) VDS Body Diode Forward Voltage Drop Body Diode Recovery dv/dt Body Diode Reverse Current lRM di/dt l , Body Diode forward currentFM V =10VGS (D.U.T) www.nellsemi.com Page 3 of 7 50N30 Series

■ TEST CIRCUIT(Cont.) Fig.2A Switching test circuit 10V D.U.T. RD VDS VGS RG VDD Pulse Width ≤ 1µs Duty Factor ≤ 0.1% Fig.2B Switching Waveforms VDS VGS 90% 10% td(ON) tR td(OFF) tF Fig.3A Gate charge test circuit Fig.3B Gate charge waveform Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms Same Type as D.U.T. VDS D.U.T. 3mA VGS 0.3µF 50kΩ 0.2µF 12V QG QGS QGD 10V VGS Charge L VDS RD 10V tp VDD D.U.T. VDD tp Time lAS BVDSS lD(t) VDS(t) www.nellsemi.com Page 4 of 7 50N30 Series

www.nellsemi.com Page 5 of 7 Fig.1 Output characteristics Fig.4 R Normalized to l =25A value vs.DS(on) D Junction temperature Drain current, l (A) D R (DS(on) Normalized) Junction temperature, T (°C)J RDS(on) (Normalized) Drain current, l (A)D Fig.3 Output characteristics Fig.2 Extended output characteristics Fig.5 R Normalized to l =25A value vs.DS(on) D Drain current Fig.6 Maximum drain current vs. Case temperature Case temperature, T C (°C) 50N30 Series V = 10VGS 8.5V V = 10VGS 9.5V 0 5 10 15 20 25 30 8.5V Drain-source Voltage, V (V) DS 0 1 2 3 4 5 6 7 8 9 V = 10VGS 3.0 2.6 2.2 1.8 1.4 1.0 0.6 0.2 -50 -25 25 50 75 100 125 1500 V = 10VGS l = 50AD l = 25AD 3.0 2.0 2.8 2.6 2.4 2.2 1.8 1.6 1.4 1.2 1.0 0.8 0 10 20 30 40 50 60 70 V = 10VGS T = 125°CJ T = 25 °CJ -50 -25 25 50 75 100 125 1500 Drain current, l (A) D Drain-source Voltage, V (V) DS Drain current, l (A) D Drain-source Voltage, V (V) DS Drain current, l (A) D T = 25°CJ T = 125°CJ T = 25°CJ

www.nellsemi.com Page 6 of 7 Fig.7 Transfer characteristics Fig.8 Transconductance Fig.9 Forward voltage drop of lntrinsic diode Fig.10 Gate charge characteristics Gate-Source voltage, V (V)GS Gate charge, Q (nC)G 50N30 Series Gate-Source voltage, V (V) GS T = 125°CJ 25°C -40°C Forward transconductance, g (S) fs Drain current, l (A)D 0 10 20 30 40 50 60 T = -40°CJ 25°C 125°C Source-drain current, l (A) S 160 140 120 100 T = 125°CJ T = 25°CJ Diode forward voltage, V (V)SD 0 10 20 30 40 50 60 70 80 90 V =150VDS l =25AD l =10mAG Fig.11 Capacitance characteristics Fig.12 Forward-Bias safe opeerating area 10000 1000 100 0 5 10 15 20 25 30 35 40 Ciss Coss Crss V =0VGS f=1 MHZ 10000 1000 100 100010010 Drain current, l (A) D Capacitance (pF) Drain-source voltage, V (V) DS T =150°Cj T =25°CC Single Pulse R LimitDS(on) 1ms 100µs 25µs operation in this area is limited by RDS(on) Drain current, l (A) D Drain-source voltage, V (V) DS V =20VDS

www.nellsemi.com Page 7 of 7 Fig.13 Maximum transient thermal lmpedance R (°C/W) th(j-c) 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse width (S) Case Style All dimensions in millimeters(inches) D (Drain) G (Gate) S (Source) TO-247AB 5.38 (0.212) 6.20 (0.244) 15.49 (0.610) 16.26 (0.640) 16.15 (0.242) 20.80 (0.819) 21. (0.845) 19.81 (0.780) 20.32 (0.800) 4.50 (0.177)Max 1.01 (0.040) 1.40 (0.055) 5.45 (0.215) 5.45 (0.215) 1.65 (0.065) 2.13 (0.084) 2.87 (0.113) 3.12 (0.123) 3.55 (0.138) 3.81 (0.150) (TYP.) (TYP.) G S D 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098)Drain 0.40 (0.016) 0.79 (0.031) 2.21 (0.087) 2.59 (0.102)