50N06B KIA
Document overview
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Technical content
50A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 50N06BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n RDS(on)=10.5mΩ@ VGS=10V n Lead free and green device available n Low Rds-on to minimize conductive loss n High avalanche current 2.Applications n Power supply n UPS n Battery management system 3.Symbol 1of6 Rev1.1JAN2014 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
50A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 50N06BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4.Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDSS 60 V Gate-sourcevoltage VGSS +25 V Continuousdraincurrent TC=25ºC ID3 50 A TC=100ºC 35 A Pulsedraincurrent TC=25ºC IDP4 250 A Avalanchecurrent IAS5 15 A Avalancheenergy, EAS5 120 mJ Maximumpowerdissipation TC=25 ºC PD 88 W TC=100ºC 44 W Junction&storagetemperaturerange TJ,TSTG -55-175 ℃ 5.Thermalcharacteristics Parameter Symbol Rating UnitTo-252 To-220 Thermalresistance,Junction-ambient RθJA 100 62.5 ºC/W Thermalresistance,Junction-case RθJC 1.1 1.7 ºC/W 2of6 Rev1.1JAN2014
50A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 50N06BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,IDS=250μA 60 - - V Zerogatevoltagedraincurrent IDSS VDS=48V,V GS=0V - - 1 μA TJ=125°C - - 20 Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 3.0 4.0 V Gateleakagecurrent IGSS VGS=+25V,V DS=0V - - +100 nA Drain-sourceon-resistance RDS(on)1 VGS=10V,ID=30A - 10.5 12.5 mΩ Gateresistance Rg VDS=0V,V GS=0V,f=1MHz - 1.0 - Ω Diodeforwardvoltage VSD1 ISD=30A,V GS=0V - 0.8 1.3 V Diodecontinuousforwardcurrent IS3 - - 50 A Reverserecoverytime trr IF=30A, dlSD/dt=100A/μs - 32 - nS Reverserecoverycharge Qrr - 60 - nC Inputcapacitance Ciss VDS=25V,VGS=0V, f=1MHz - 2060 - pFOutputcapacitance Coss - 755 - Reversetransfercapacitance Crss - 375 - Turn-ondelaytime td(on) VDD=30V,I D=30A, RG=5Ω,VGS=10V - 14 - nS Risetime tr - 13 - Turn-offdelaytime td(off) - 20 - Falltime tf - 7.5 - Totalgatecharge Qg VDS=48V,V GS=10V IDS=30A - 50 - nCGate-sourcecharge Qgs - 12 -- Gate-draincharge Qgd - 17 -- Note:1:Pulsetest;pulsewidth< 300usdutycycle< 2%. 2:Guaranteedbydesign,notsubjecttoproductiontesting. 3:Packagelimitationcurrentis50A.Calculatedcontinuouscurrentbasedonmaximumallowable junctiontemperature. 4:Repetitiverating,pulsewidthlimitedbymaxjunctiontemperature. 5:StartingT J=25℃,L=0.5mH,IAS=31A. 3of6 Rev1.1JAN2014
50A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 50N06BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of6 Rev1.1JAN2014
50A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 50N06BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of6 Rev1.1JAN2014
50A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 50N06BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of6 Rev1.1JAN2014