50N06 KIA

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Technical content

50Amps,60Volts N-CHANNELMOSFET 1.Description TheKIA50N06isthree-terminalsilicondevicewithcurrentconductioncapabilityofabout50A, fastswitchingspeed.Lowon-stateresistance,breakdownvoltageratingof60V,andmaxthreshold voltagesof4volt.Itismainlysuitableelectronicballast,andlowpowerswitching 2.Features n RDS(ON)=18mΩ@VGS=10V. n Ultralowgatecharge(typical30nC) n Lowreversetransfercapacitance n Fastswitchingcapability n 100％ avalancheenergyspecified n Improveddv/dtcapability 3. Pinconfiguration 1of6 Rev1.1JAN2014 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

50Amps,60Volts N-CHANNELMOSFET 4. Absolutemaximumratings Parameter Symbol Value Unit Draintosourcevoltage VDSS 60 V Gatetosourcevoltage VGSS ±20 V Continuousdraincurrent TJ=25 ºC ID 50 A TJ=100 ºC ID 35 A Draincurrentpulsed (note1) IDM 200 A Singlepulsedavalancheenergy (note2) EAS 480 mJ Repetitiveavalancheenergy (note1) EAR 13 mJ Peakdioderecoverydv/dt (note3) dv/dt 7 V/ns Totalpowerdissipation(T J=25 ºC) PD 130 W Deratingfactorabove25 ºC PD 0.9 W/ ºC Operatingjunctiontemperature TJ -55~+150 ºC Storagetemperature TSTG -55~+150 ºC Note:Absolutemaximumratingsarethosevaluesbeyondwhichthedevicecouldbepermanently damaged. Absolutemaximumratingsarestressratingsonlyandfunctionaldeviceoperationisnotimplied. 5. Thermalresistance Parameter Symbol Typ Max Units Thermalresistance,junction-to-case θJC 1.15 ºC/W Thermalresistance,case-to-sink θCS 0.5 ºC/W Thermalresistance,junction-to-ambient θJA 62.5 ºC/W 2of6 Rev1.1JAN2014 KIA SEMICONDUCTORS 50N06KIA SEMICONDUCTORS KIA SEMICONDUCTORS

50Amps,60Volts N-CHANNELMOSFET 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenotes) Parameter Symbol Testconditions Min Typ Max Unit Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 60 V Breakdownvoltagetemperature coefficient ΔBVDSS/ΔTJ ID=250μA, referencedto25 ºC 0.07 V/ºC Drain-sourceleakagecurrent IDSS VDS=60V,VGS=0V 1 μA VDS=48V,TC=125 ºC 1 μA Gate-sourceleakagecurrent IGSS VGS=20V,VDS=0V 100 nA Gate-sourceleakageReverse VGS=-20V,VDS=0V -100 nA Oncharacteristics Gatethresholdvoltage VGS(TH) VDS=VGS,I D=250μA 2.0 4.0 V Staticdrain-sourceon-state resistance RDS(ON) VGS=10V,ID=25A 18 23 mΩ Dynamiccharacteristics Inputcapacitance CISS VDS=25V,VGS=0V,f=1MHz 900 1220 pF Outputcapacitance COSS 430 550 pF Reversetransfercapacitance CRSS 80 100 pF Switchingcharacteristics Turn-ondelaytime tD(ON) VDD=30V,ID=25A,RG=50Ω (note4,5) 40 60 ns Risetime tR 100 200 ns Turn-offdelaytime tD(OFF) 90 180 ns Falltime tF 80 160 ns Totalgatecharge QG VDS=48V,VGS=10V,ID=50A (note4,5) 30 40 nC Gate-sourcecharge QGS 9.6 nC Gate-draincharge(millercharge) QGD 10 nC Source-draindioderatingsandcharacteristics Diodeforwardvoltage VSD VGS=0V,IS=50A 1.5 V Continuoussourcecurrent IS Integralreversep-njunction diodeintheMOSFET 50 A Pulsedsourcecurrent ISM 200 A Reverserecoverytime tRR VGS=0V,IS=50A dIF/dt=100A/μs(note4) 54 ns Reverserecoverycharge QRR 81 μC Note:1.repetitiverating:pulsewidthlimitedbyjunctiontemperature 2.L=0.5mH,IAS=50A,VDD=25V,RG=0Ω,staringT J=25ºC 3.ISD<50A,di/dt<300A/μs,VDD<BVDSS,staringT J=25 ºC 4.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 5.Essentiallyindependentofoperatingtemperature 3of6 Rev1.1JAN2014 KIA SEMICONDUCTORS 50N06KIA SEMICONDUCTORS KIA SEMICONDUCTORS

50Amps,60Volts N-CHANNELMOSFET 7.Typicalcharacteristics 4of6 Rev1.1JAN2014 KIA SEMICONDUCTORS 50N06KIA SEMICONDUCTORS KIA SEMICONDUCTORS

50Amps,60Volts N-CHANNELMOSFET 5of6 Rev1.1JAN2014 KIA SEMICONDUCTORS 50N06KIA SEMICONDUCTORS KIA SEMICONDUCTORS

50Amps,60Volts N-CHANNELMOSFET 6of6 Rev1.1JAN2014 KIA SEMICONDUCTORS 50N06KIA SEMICONDUCTORS KIA SEMICONDUCTORS