50N06 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 50N06
- DESCRIPTION
- Drain Current I D= 50A@ TC=25℃
- Drain Source Voltage- : V DSS= 60V(Min)
- Fast Switching Speed
- APPLICATIONS
- General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 50 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
- THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.96 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W PDF pdfFactory Pro www.fineprint.cn
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 50N06
- ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA 60 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V VSD Diode Forward On-Voltage IF=4A ;VGS= 0 1.4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=25A 0.028 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 60V; VGS= 0 250 µA PDF pdfFactory Pro www.fineprint.cn