50N06

50N06 NELLSEMI

Document overview

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Technical content

(50A, 60Volts) TO-220AB ( )50N06A ITO-220AB (TO-220F) ( F)50N06A G D S D D G S D They are designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. The Nell 50N06 is a three-terminal silicon device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max. threshold voltage of 4 volts.

DESCRIPTION

Low reverse transfer capacitance (C = 80pF typical)RSS R = 22mΩ@V = 10V DS(ON) GS Ultra low gate charge(40nC max.) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature

FEATURES

I (A)D 50 V (V)DSS 60 0.022 @ V = 10VGS R (Ω)DS(ON) Q (nC) max.G GDS G SD TO-251 (50N06F) TO-252 ( G)50N06 D (Drain) G (Gate) S (Source) Page 1 of 9www.nellsemi.com

V W A mJ ºC -55 to 175 VALUE ±20 480 200 130 130 120 ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)C T =25°C to 150°CJ TEST CONDITIONS R =20KΩGS T =25°C C T =100°C C Operation junction temperature Single pulses avalanche energy(Note 2) Repetitive avalanche energy(Note 1) Storage temperature Peak diode recovery dv/dt(Note 3) PARAMETER Pulsed Drain current(Note 1) Continous Drain Current Total power dissipation, T =25C °C Gate to Source voltage Drain to Gate voltage Drain to Source voltag SYMBOL EAR VDGR VDSS dv/dt VGS IDM EAS TSTG PD ID TJ TL . .lbf in (N m) 300Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw -55 to 175 Note: 1.Repetitive rating: pulse width limited by junction temperature. 2.L = 5.6mH, I = 50A, V = 25V, R = 0Ω, starting T =25°C.AS DD G J 3.I ≤ 50A, di/dt ≤ 300A/us, V ≤ V , starting T =25°C.SD DD (BR)DSS J TO-251 TO-252 TO-220 TO-220F UNITMin. 0.5 100 1.15 1.78 62.5 1.24 THERMAL RESISTANCE TO-251/TO-252 TO-220 TO-251/TO-252 TO-220/TO-220F PARAMETER Thermal resistance, junction to ambient Thermal resistance, junction to case TO-220F SYMBOL Rth(j-c) Rth(j-a) Rth(c-s) Thermal resistance, case to heatsink Typ. Max. ºC/W Page 2 of 9www.nellsemi.com 10 (1.1) 1.6mm from case

V ns μA pF nC Max. 2.0 -100 100 0.07 900 100 430 ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)C I = 250µA, V = 0VD GS TEST CONDITIONS I = 250µA, referenced to 25°CD V =60V, V =0V DS GS T = 25°C C Fall time Gate to source reverse leakage current Input capacitance Total gate charge Output capacitance PARAMETER Rise time Gate to source forward leakage current Turn-on delay time Reverse transfer capacitance Breakdown voltage temperature coefficient Drain to source breakdown voltage Turn-off delay time SYMBOL CISS ▲ ▲V /(BR)DSS TJ V(BR)DSS IGSS QG tr tf QGS 9.6Gate to source charge Gate to drain charge (Miller charge) V = 48V, V = 10V, I = 50A DS GS D (Note 1, 2) Drain to source leakage currentIDSS COSS CRSS td(ON) td(OFF) QGD V/ºC mΩ V nA T =150°C C Typ.Min. 4.0 1.0 1220 550 100 200 180 160 UNIT V nC Max. SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (T = 25°C unless otherwise specified)C I = 50A, V = 0VSD GS TEST CONDITIONS Integral reverse P-N junction diode in the MOSFET I = 50A, V = 0V, S GS dI /dt = 100A/µs F PARAMETER Reverse recovery time Pulsed source current Continous source current Diode forward voltage SYMBOL IS VSD ISM trr Reverse recovery chargeQrr A ns Typ.Min. 200 D (Drain) G (Gate) S (Source) 1.5 Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. V = 30V, I = 25A, R =50Ω DD D G (Note 1, 2) V = 25V, V = 0V, f =1MHzDS GS V = -20V, V = 0VGS DS V = 20V, V = 0VGS DS Page 3 of 9www.nellsemi.com V =V , I =250μA GS DS DGate threshold voltage Static drain to source on-state resistanceRDS(ON) VGS(TH) I = 50A, V = 10VD GS

ORDERING INFORMATION SCHEME MOSFET series Current rating, ID Voltage rating, VDS 50 = 50A 06 = 60V

50 N 06 A

A = TO-220AB AF = TO-220F G = TO-252(D-PAK) F = TO-251 ( I-PAK) N = N-Channel ■ TEST CIRCUITS AND WAVEFORMS Fig.1A Peak diode recovery dv/dt test circuit Fig.1B Peak diode recovery dv/dt waverforms D.U.T. + VDS RG VGS VDD Same Type as D.U.T. Driver dv/dt controlled by R* G l controlled by pulse period* SD D.U.T.-Device under test* L Period P.W. VGS (Driver) P.W. Period VDD lSD (D.U.T) (D.U.T) VDS Body Diode Forward Voltage Drop Body Diode Recovery dv/dt Body Diode Reverse Current lRM di/dt l , Body Diode forward currentFM V =10VGS (D.U.T) Page 4 of 9www.nellsemi.com

■ TEST CIRCUITS AND WAVEFORMS(Cont.) Fig.2A Switching test circuit 10V D.U.T. RL VDS VGS RG VDD Pulse Width ≤ 1µs Duty Factor ≤ 0.1% Fig.2B Switching Waveforms VDS VGS 90% 10% td(ON) tR td(OFF) tF Fig.3A Gate charge test circuit Fig.3B Gate charge waveform Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms Same Type as D.U.T. VDS D.U.T. 1mA VGS 0.3µF 50kΩ 0.2µF 12V QG QGS QGD 10V VG Charge L VDS RG 10V tp VDD Page 5 of 9www.nellsemi.com D.U.T. lAS tp Time BVDSS

Fig.1 On-State characteristics Drain-Source voltage, V (V)DS Gate-Source voltage, V (V)GS Fig.4 On state current vs. allowable case temperature Drain Current, l (A) D Reverse drain current, l (A)SD Drain current, l (A)D Source-Drain voltage, V (V)SD Capacitance (pF) Drain-Source voltage, V (V)DC Fig.3 On-Resistance variation vs drain current and gate voltage Drain-Source On-Resistance, R (mΩ)DS(ON) Drain current, I (A)D Fig.2 Transfer characteristics 50N06 Series ■ TYPICAL CHARACTERISTICS 010 110 210 010-110 110 VGS Top: 15V 10V 5.5V Bottorm: 4.5V 4.5V 010 110 210 2 3 4 5 6 7 8 9 10 Note: 1. V = 50VDS 2. 250µs Pulse Test 150ºC 25ºC 2.5 2.0 1.5 1.0 0.5 0.0 010 110 2103.0 3.5 V = 10VGS V = 20VGS 150ºC 25ºC Note: 1. V = 0VGS 2. 250µs Test Fig.5 Capacitance characteristics (Non-Repetitive) Fig.6 Gate charge characteristics Gate-to-Source voltage,V (V)GS 3000 2500 2000 1500 1000 500 0 5 10 15 20 25 30 35 C = C + C (C = shorted)lSS GS GD DS C = C + C (C = shorted)OSS DS GD DS C = C RSS GD Note: 1. V = 0VGS 2. f = 1MHz ClSS COSS CRSS 0 5 10 15 20 25 30 35 40 45 Total gate charge, Q (nC)G V = 30VDS V = 48VDS Note: l = 50AD Page 6 of 9www.nellsemi.com

Fig.7 Breakdown voltage variation vs junction temperature Fig.8 On-Resistance variation vs junction temperature Fig.9 Maximum safe operating Fig.10 Maximum drain current vs. case temperature Fig.11 Transient thermal response curve Drain-Source breakdown voltage, BV (Normalized) Dss Drain-Source On-Resistance, R (Normalized) Ds(ON) , Drain current, l (A)D, Drain current, l (A)D Thermal response, R (t)th(j-c) 1.2 1.1 1.0 0.9 0.8 -100 -50 0 50 100 150 200 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 010 110 210 310 -110 010 110 210-110 25 50 75 100 125 150 010 -210 -110 010-210 -110-410-510 -310 110 Note: 1. V = 0VGS 2. l = 250μAD Junction temperature, T (°C)j Junction temperature, T (°C)J Note: 1. V = 10VGS 2. l = 25AD Operation in This Area by RDS (on) 100μs 1ms 10ms 10ms Note: 1. V = 0VGS 2. l = 250μAD Note: 1. T = 25 CC 2. T = 150°CJ 3. Sing Pulse Drain-Source voltage, V (V)DS Case temperature, T (°C)C Note: 1. R 2. Duty Factor, D = t1/t2 (t) = 1.42°C/W Max.th(j-c) 3. T -T = P x R (t) J C DM th(j-c) D =0.5 0.2 0.1 0.05 0.02 Square wave pulse duration, t (sec) 1 Single pulse 0.01 Page 7 of 9www.nellsemi.com Nell High Power Products

6.4(0.52) 6.6(0.26) 5.2(0.204) 1.37(0.054) 9.4(0.37) 9(0.354) 16.3(0.641) 15.9(0.626) 4.6(0.181) 4.4(0.173) 0.85(0.033) 0.55(0.021) 1.9(0.075) 1.8(0.071) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 0.62(0.024) 0.45(0.017) 6.2(0.244) 6(0.236) 1 2 1.14(0.045) 0.89(0.035) 0.76(0.030) 2.28(0.090) 4.57(0.180) 0.64(0.025) 6.4(0.251) 6.6(0.259) 5.4(0.212) 5.2(0.204) 1.5(0.059) 1.37(0.054) 9.35(0.368) 10.1(0.397) 2.4(0.095) 2.2(0.086) 0.62(0.024) 0.48(0.019) 6.2(0.244) 6(0.236) 0.62(0.024) 0.45(0.017) TO-251 (I-PAK) TO-252 (D-PAK) Case Style 2.87 (0.113) 2.62 (0.103) 9.40 (0.370) 9.14 (0.360) 10.54 (0.415) MAX. 16.13 (0.635) 15.87 (0.625) PIN 4.06 (0.160) 3.56 (0.140) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 5.20 (0.205) 4.95 (0.195) 0.90 (0.035) 0.70 (0.028) 3.91 (0.154) 3.74 (0.148) 4.70 (0.185) 4.44 0.1754 ( ) 1.39 (0.055) 1.14 (0.045) 3.68 (0.145) 3.43 (0.135) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560) 13.46 (0.530) 0.56 (0.022) 0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603) 14.55 (0.573) TO-220AB RoHS RoHS 50N06 Series Page 8 of 9www.nellsemi.com Nell High Power Products D (Drain) G (Gate) S (Source)

www.nellsemi.com Page 9 of 9 Case Style ITO-220AB 1 3 3.3 3.1 13.7 13.5 All dimensions in millimeters 16.0 15.8 2.8 2.6 0.48 0.44 2.54 TYP 0.9 0.72.54 TYP 16.4 15.4 7.1 6.7 3.7 3.2 10.6 10.4 4.8 4.6 10° 2.85 2.65 3.4 3.1 RoHS RoHS 50N06 Series Nell High Power Products D (Drain) G (Gate) S (Source)