50N03 KIA
Document overview
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Technical content
50Amps,30Volts N-CHANNELMOSFET 1.Features n Advancedtrenchprocesstechnology n Highdensitycelldesignforultralowon-resistance n Fullycharacterizedavalanchevoltageandcurrent 2.Applications n VDSS=30V,RDS(on)=6.5mΩ,ID=50A n Vds=30V n RDS(ON)=6.5mΩ(Max.),VGS@10V,Ids@30A n RDS(ON)=9.5mΩ(Max.),VGS@4.5V,Ids@30A 3. Pinconfiguration 1of3 Rev1.0JAN2014 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
- Maximumratingsandthermalcharacteristics (Ta=25°C,unlessotherwisenotes) Rating Symbol Value Unit Drain-sourcevoltage VDS 30 V Gate-sourcevoltage VGS +20 V Continuousdraincurrent ID 50 A Pulseddraincurrent 1) IDM 200 A Maximumpowerdissipation TA=25°C PD 60 W TA=75°C PD 23 W Operatingjunctionandstoragetemperaturerange TJ/TSTG -55to150 °C Junction-to-casethermalresistance RθJC 1.8 °C/W Junction-toambientthemalrasistance(PCBmount) 2) RθJA 50 °C/W Note:1.Repetitiverating:pulsewidthlimitedbythemaximumjunctiontemperation 2.1-in2 2ozCuPCBboard 3.Guaranteedbydesign;notsubjecttoproductiontesting 5. Orderinginformation Partnumber Package KIA50N03 TO-251,TO-252,TO-220 6. Typicalapplicationcircuit 2of3 Rev1.0JAN2014 KIA SEMICONDUCTORS 50N03
- Electricalcharacteristics (Ta=25°C,unlessotherwisenotes) Parameter Symbol Testconditions Min. Typ. Max. Units Static Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 30 - - V Drain-sourceon-state rasistancem RDS(ON) VGS=4.5V,ID=30A - 9.5 13.0 mΩ VGS=10V,ID=30A - 6.5 9.0 mΩ Gatethresholdvoltage VGS(th) VDS=VGS,ID=-250μA 1 1.8 3 V Forwardtransconductance gfs VDS=15V,ID=15A - 12 - S Zerogatevoltagedraincurrent IDSS VDS=25V,VGS=0V - - 1 μA Gate-sourceforwardleakage IGSS VGS=+20V,VDS=0V - - +100 nA Dynamic3) Totalgatecharge Qg ID=35A VDS=15V VGS=10V - 10 25 nC Gate-sourcecharge Qgs 3.5 10 nC Gate-drain( “miller”)charge Qgd - 3 65 nC Turn-ondelaytime td(off) VDD=15V ID=1A RG=6Ω RL=15Ω VGEN=10V - 12 - ns Risetime tr - 4 - ns Turn-offdelaytime td(off) - 32 - ns Falltime tf - 6 - ns Inputcapacitance Ciss VGS=0V VDS=15V f=1.0MHz - 1180 - pF Outputcapacitance Coss - 270 - pF Reversetransfercapacitance Crss - 145 - pF Source-draindiode Parameter Symbol Testcondition Min. Typ. Max. Units Diodeforwardvoltage VSD IS=20A,VGS=0V - 0.87 1.5 V Max.diodeforwardcurrent IS - - 20 A Notes:Pulsewidth< 300μs,dutycycle< 2% 3of3 Rev1.0JAN2014 KIA SEMICONDUCTORS 50N03