50A02CH

50A02CH_10 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 4

Technical content

Features

• High collector current capability
• Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=210mΩ [IC=0.5A, IB=50mA]
• Low ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO - -50 V Collector-to-Emitter Voltage VCEO - -50 V Emitter-to-Base Voltage VEBO -- 5 V Collector Current IC - -500 mA Collector Current (Pulse) ICP - -1.0 A Collector Dissipation PC Mounted on a ceramic board (600mm2✕0.8mm) 700 mW Junction Temperature Tj 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB=- -40V, IE=0A - -100 nA Emitter Cutoff Current IEBO VEB=- -4V, IC=0A - -100 nA DC Current Gain hFE VCE=- -2V, IC=- -10mA 200 500 Marking : AX Continued on next page. SANYO Semiconductors DATA SHEET http://semicon.sanyo.com/en/network 72110EA TK IM TC-00002407 / O3103 TS IM TA-100637 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 50A02CH PNP Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier Applications

No.7487-2/4 Collector-to-Emitter V oltage, VCE -- mV Collector Current, IC -- mA Base-to-Emitter V oltage, VBE -- V Collector Current, IC -- mA Collector Current, IC -- mA DC Current Gain, hFE --100 --50 IC -- VCE IT05118 IT05119 --200 --150 --300 --250 --500 --450 --400 --350 IC -- VBE --200 --600 --500 --400 --300 --100 IB=0μA Ta=75 --25 --200μA --1mA --500μA --2mA --5mA --10mA --15mA --50mA --30mA --20mA--25mA VCE= --2V --40mA IT05120 100 hFE -- IC --1.0 2 3 5 7 --10 2 3 5 7 2 3 5 7--100 --1000 1000 Ta=75°C 25°C --25°C VCE= --2V IT05410 --1.0 23 5 7 --10 23 5 7 23 5 7 --100 --100 --10 Ta=75 --25 °C25°C IC / IB=10 VCE(sat) -- IC Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Gain-Bandwidth Product f T VCE=- -10V, IC=- -50mA 690 MHz Output Capacitance Cob V CB=- -10V, f=1MHz 3.8 pF Collector-to-Emitter Saturation Voltage V CE(sat) I C=- -100mA, IB=- -10mA - -60 - -120 mV Base-to-Emitter Saturation Voltage V BE(sat) I C=- -100mA, IB=- -10mA - -0.9 - -1.2 V Collector-to-Base Breakdown Voltage V (BR)CBO IC=- -10μA, IE=0A - -50 V Collector-to-Emitter Breakdown Voltage V (BR)CEO IC=- -1mA, RBE=∞ - -50 V Emitter-to-Base Breakdown Voltage V (BR)EBO IE=- -10μA, IC=0A - -5 V Turn-ON Time t on See specified Test Circuit. 30 ns Storage Time t stg See specified Test Circuit. 170 ns Fall Time t f See specified Test Circuit. 30 ns Package Dimensions Switching Time Test Circuit unit : mm (typ) 7015A-003 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 2.9 0.05 0.4 2.8 1.6 0.2 0.6 0.6 0.9 0.2 0.15 0.95 VR RB VCC= --25VVBE=5V + +50Ω INPUT OUTPUT RL 220μF4 7 0 μF PW=20μs IB1 D.C.≤1% IB2 IC=20IB1= --20IB2= --200mA

No.7487-3/4 Collector Dissipation, PC -- mW Ambient Temperature, Ta -- °C PC -- Ta IT05047 100 200 300 600 400 500 700 800 4020 100 12060 80 140 160 Mounted on a ceramic board (600mm 2✕0.8mm) Collector-to-Base V oltage, VCB -- V Output Capacitance, Cob -- pF Collector Current, IC -- mA Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV Base-to-Emitter Saturation V oltage, VBE(sat) -- V Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz IT05122 --1.0 1.0 Cob -- VCB --102 3 5 7 2 3 5 7 --100 f=1MHz IT05124 VCE(sat) -- IC IT05125 VBE(sat) -- IC --1.0 23 5 7 --10 23 5 7 23 5 7 --100 --1000 --1000 --100 --10 IC / IB=50 Ta=75 --25°C 25°C --1.0 --1.0 23 5 7 --10 23 5 7 23 5 7 --100 --1000 Ta= --25°C 75°C 25°C IC / IB=20 IT05121 --1.0 fT -- IC 23 5 7 23 5 7 23 5 7--10 --100 --1000 100 1000 VCE= --10V IT05123 VCE(sat) -- IC --1.0 23 5 7 --10 23 5 7 23 5 7 --100 --1000 --1000 --100 --10 Ta=75 --25 25°C IC / IB=20 Collector Current, IC -- mA Collector-to-Emitter Saturation V oltage, VCE(sat) -- mV f=1MHz --0.1 0.1 Base Current, IB -- mA Ron -- IB ON Resistance, Ron -- Ω IT06093 1.0 100 32 57 32 57--1.0 --10 OUTIN 1kΩ 1kΩ IB

No.7487-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS This catalog provides information as of July, 2010. Specifications and information herein are subject to change without notice.