500PT NELLSEMI
Document overview
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Technical content
(@)NELL 500 PT Series ads ee Features PHASE CONTRAL THYRISTORS 1. High dv/dt 2. High surge capability 22 (0.87) MAX. ceramic insulator yom. @--@ 4. Compression Bonded Encapsulation for heavy wu a White Gate duty operations such as severe thremal cycling 2 = J [Autite cate ie a 5. Types up to 1600V | 2 [ Aee cathide Typical Applications = 8 LA F3 + DC motor control g| 2 ¢ 8 * Controlled DC power supplies o| wv | 3g) * AC controllers zg s zg Ordering code ——— = ci
500 PT 16 s M — gt i=
(sw) pr we || 8 | w | | ap (1) Maximum average on-state current,A 5 FS —sw45 (2) For phase control thyristors 5 ai}r-teUNF (3) Voltage code,code x 100=VRRM/VDRM : - (4) For stud type 49(1.92)MAX. (5) M24x1.5 - Co - . co. All dimensions in millimeters(inches)
Electrical Characteristics
I . 180 half sine wave , 50Hz (AV) | Mean on-state current Single side cooled T= 85°C A VRRM | Repetitive peak off-state voltage VorM &VRRM tp=10ms 200 to 1600 v VDRM | Repetitive peak reverse voltage VpsM & VRsM = VoRM & Vern + 100V irs Surgeorstatecuren [me van wor 10885 re For fusing coordination No voltage reapplied | 62 | ats | Vt(To) | Threshold voltage 0.84 v tt On-state slope resistance 0.42 ma VTM | Max. Forward voltage drop Tj=Tj max 15 Vv Cirtical rate of rise of turned-on current Gate drive 20V, 200 , ty Stys | 1000 | Aus | ITM=300A,T)=T; max. djqi=20A/us VR=50V t Typical turn-off t vi \\ Ss q ypteatturneorrtime dyidt=20Vips , Gate OV 1000 100 a Pg Max. average gate power Tj=T) max. tp $5ms 2 w Pom Max. peak gate power square 10 Ww gt | Gate trigger current VaA=t2V, IAa=1A Rin(sh) | Thermalresistanceunctiontocase) Single side cooled a www.nellsemi.com Page 1 of 2