4N37SM

4NXX UMW

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 8

Technical content

Description

The4N25,4N26,4N27,4N28,4N35,4N36,4N37,4N38series combineanAlGaAs infraredemittingdiodeas theemitterwhichisopticallycoupledtoasilicon planar phototransistordetectorina plasticDIP6packagewith differentleadformingoptions.F eatures  Highisolation5000VRMS  DCinputwithtransistoroutput  Operatingtemperaturerange-55°Cto 110°C  RoHS&REACHCompliance  MSLclass1

Applications

 Sequencecontroller  Telephone/FAX  Systemappliances,measuring instrument  Programmablelogiccontroller Schematics www.umw-ic.com 1 友台半导体有限公司 UMW R UMW 4Nxx 1.Anode 2.Cathode 3.NC 6.Base 5.Collector 4.Emitter  UL-approved: UL1577,FileNo.E492440

PARAMETER SYMBOL VALUE UNIT NOTE INPUT ForwardCurrent IF 50 mA PeakForwardCurrent(t=10μs) IFM 1 A 1 ReverseVoltage VR 6 V PowerDissipation(TA=25°C) PD 70 mW OUTPUT Collector-EmitterVoltage VCEO 80 V Collector-BaseBreakdownVoltage VCBO 80 V Emitter-CollectorVoltage VECO 7 V Emitter-BaseBreakdownVoltage VEBO 7 V CollectorCurrent IC 80 mA PowerDissipation(TA=25°C) PC 150 mW COMMON TotalPowerDissipation Ptot 200 mW IsolationVoltage Viso 5000 Vrms 2 OperatingTemperature Topr -55~+110 °C StorageTemperature Tstg -55~+110 °C SolderingTemperature Tsol 260 °C Note 1. AC For 1 Minute, R.H. = 40 ~ 60% Note 2. For 10 seconds www.umw-ic.com 2 友台半导体有限公司 UMW R UMW 4Nxx

ELECTRICALOPTICALCHARACTERISTICSatTa=25°C PARAMETER SYMBOL MIN TYP. MAX UNIT TESTCONDITION NOTE INPUT ForwardVoltage VF - 1.24 1.4 V IF=10mA ReverseCurrent IR - - 10 μA VR=6V Input Capacitance Cin - 30 - pF V=0,f=1kHz OUTPUT CollectorDark Current ICEO - - 20 nA VCE=10V,IF=0 Collector-Emitter Breakdown Voltage BVCEO 80 - - V IC=1mA,IF=0 Emitter-Collector Breakdown Voltage BVECO 7 - - V IE=1mA,IF=0 Collector-Base Breakdown BVCBO 80 - - V IC=0.1mA,IF=0 Emitter-Base Breakdown BVEBO 7 - - V IE=0.1mA，IF=0 www.umw-ic.com 3 友台半导体有限公司 UMW R UMW 4Nxx

4N35,4N36,4N37 100 - - % IF=10mA,VCE=10V4N25,4N26,4N38 20 - - 4N27,4N28 10 - - Collector-Emitt er Saturation Voltage VCE(sat) 4N25,4N26, 4N27,4N28 - - 0.5 V IF=10mA,VCE=10V 4N35,4N36,4N37 - - 0.3 IF=10mA,IC=0.5mA 4N38 - - 1.0 IF=20mA,IC=4mA 4N25,4N26, 4N27,4N28 - - 0.5 IF=50mA,IC=2mA Isolation Resistance RIO 10^1 2 10^14 - Ω VIO=500Vdc. Floating Capacitance CIO - 0.2 1 pF V=0,f=1MHz Cut-off Frequency fc - 6 - kHz VCE=5V,IC=2mA RL=100Ω,-3dB TurnOnTime ton 4N25,4N26,4N27, 4N28 - 3 15 - IF=10mA,VCC= 10V,RL=100Ω 4N35,4N36,4N37, 4N38 - 10 12 - Ic=2mA,VCC=10V, RL=100Ω TurnOffTime toff 4N25,4N26,4N27, 4N28 - 3 16 - IF=10mA,VCC= 10V,RL=100Ω 4N35,4N36,4N37, 4N38 - 9 12 - Ic=10mA,VCC=10V, RL=100Ω www.umw-ic.com 4 友台半导体有限公司 UMW R UMW 4Nxx

Fig.1ForwardCurrent vs.AmbientTemperature Fig.2CollectorPowerDissipation vs.AmbientTemperature Fig.3ForwardCurrent vs.ForwardVoltage Fig.4CollectorDarkCurrent vs.AmbientTemperature Fig.5CollectorCurrent vs.Collector-emitterVoltage Fig.6CollectorCurrent vs.Collector-emitterVoltage www.umw-ic.com 5 友台半导体有限公司 UMW R UMW 4Nxx

Fig.7NormalizedCurrentTransferRatio vs.ForwardCurrent Fig.8NormalizedCurrentTransferRatio vs.AmbientTemperature Fig.9CurrentTransferRatlo(Unsaturated)vs Base-EmitterResistance Fig.10SwitchingTime vs.LoadResistance www.umw-ic.com 6 友台半导体有限公司 UMW R UMW 4Nxx

PACKAGEDIMENSIONS(Dimensionsinmmunlessotherwisestated) StandardDIP–ThroughHole(DIPType) Gullwing(400mil)LeadForming–ThroughHole(MType) www.umw-ic.com 7 友台半导体有限公司 UMW R UMW 4Nxx PACKAGEDIMENSIONS (Dimensionsinmmunlessotherwisestated) SurfaceMount(LowProfile)LeadForming(SLType) RecommendedSolderMask(Dimensionsinmmunlessotherwisestated) SurfaceMountLeadForming&SurfaceMount(LowProfile)LeadForming

www.umw-ic.com 8 友台半导体有限公司 Marking

ORDERING INFORMATION

• “ XX” denotes YEAR;
• “ WW” denotes WEEK UMW R UMW 4Nxx UMW 4Nxx XXWW