GSS4953 GTM

Document overview

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Technical content

Features

*Simple Drive Requirement *Lower On-resistance *Fast Switching Package Dimensions A 5.80 6.20 M 0.10 0.25 B 4.80 5.00 H 0.35 0.49 C 3.80 4.00 L 1.35 1.75 D 0° 8° J 0.375 REF. E 0.40 0.90 K 45° F 0.19 0.25 G 1.27 TYP. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±16 V Continuous Drain Current1 ID @TA=25: -5 A Continuous Drain Current1 ID @TA=70: -4 A Pulsed Drain Current2 IDM -20 A Total Power Dissipation1 PD @TA=25: 2 W Linear Derating Factor 0.02 W/: Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 : Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-ambient1 Max. Rthj-amb 62.5 /:W BVDSS -30V RDS(ON) 53m ID -5A Pb Free Plating Product

GSS4953 Page: 2/5 ISSUED DATE :2006/01/19 REVISED DATE :2006/11/09D Electrical Characteristics (Tj = 25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Gate Threshold Voltage VGS(th) -1.0 - -2.5 V VDS=VGS, ID=-250uA Forward Transconductance2 gfs - 5 - S VDS=-5V, ID=-5A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±16V Drain-Source Leakage Current IDSS - - -1 uA VDS=-24V, VGS=0 - - 53 VGS=-10V, ID=-5A Static Drain-Source On-Resistance2 RDS(ON) - - 90 m VGS=-4.5V, ID=-4A Total Gate Charge2 Qg - 11.7 - Gate-Source Charge Qgs - 2.1 - Gate-Drain (“Miller”) Change Qgd - 2.9 - nC ID=-5A VDS=-15V VGS=-10V Turn-on Delay Time2 Td(on) - 9 - Rise Time Tr - 10 - Turn-off Delay Time Td(off) - 37 - Fall Time Tf - 23 - ns VDS=-15V ID=-1A VGS=-10V RG=6 RD=15 Input Capacitance Ciss - 582 - Output Capacitance Coss - 125 - Reverse Transfer Capacitance Crss - 86 - pF VGS=0V VDS=-15V f=1.0MHz Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - -0.84 -1.2 V IS=-1.7A, VGS=0V Notes: 1. Surface Mounted on FR4 Board, t 10sec. 2. Pulse width 300us, duty cycle 2%.

GSS4953 Page: 3/5 ISSUED DATE :2006/01/19 REVISED DATE :2006/11/09D Characteristics Curve Fig 5. Breakdown Voltage v.s. Junction Temperature Fig 6. Body Diode Forward Voltage v.s. Source Current Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. Transconductance v.s. Drain Current Fig 4. On-Resistance v.s. Junction Temperature V GS = - 10 V I D = - 5.0 A

GSS4953 Page: 4/5 ISSUED DATE :2006/01/19 REVISED DATE :2006/11/09D Fig 7. Maximum Safe Operating Area Fig 8. Gate Threshold Voltage v.s. Junction Temperature Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Switching Time Circuit Fig 12. Switching Time Waveform V DS = - 15 V I D = - 5.0 A

GSS4953 Page: 5/5 ISSUED DATE :2006/01/19 REVISED DATE :2006/11/09D Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 Fig 13. Normalized Thermal Transient Impedance Curve