4820N KIA

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Technical content

9.0A，200V N-CHANNELMOSFETKIA SEMICONDUCTORS 4820NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Applications n CRT,TV/Monitor n OtherApplications 2.Features n RDS(on)=260m Ω@VGS=10V n Proprietarynewplanartechnology n Lowgatechargeminimizeswitchingloss n Fastrecoverybodydiode 3. Pinconfiguration 1of6 Rev1.1May2016 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

9.0A，200V N-CHANNELMOSFETKIA SEMICONDUCTORS 4820NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Ratings Units Drain-sourcevoltage VDSS 200 V Gate-sourcevoltage VGSS ±20 V Continuousdraincurrenet ID 9.0 A PulseddraincurrentatV GS=10V IDM 36 A SinglepulseAvalancheenergy EAS 300 mJ Powerdissipation PD 83 W Deratingfactorabove25 °C 0.59 W/°C Solderingtemperaturedistanceof1.6mmfromcase for10seconds TL 300 °C Operatingandstoragetemperaturerange TJ &TSTG -55~+150 °C Caution:Stressesgreaterthanthoselistedinthe “ Absolutemaximumratings ” maycausepermanent damagetothedevice. 5. Thermalcharacteristics Parameter Symbol Rating UnitTO-220 TO-252 Thermalresistance,Junction-to-case θJC 1.5 1.5 ºC/W Thermalresistance,Junction-to-ambient θJA 62 75 ºC/W 2of6 Rev1.1May2016

9.0A，200V N-CHANNELMOSFETKIA SEMICONDUCTORS 4820NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Unit OffCharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 200 - - V Drain-to-sourceleakagecurrent IDSS VDS=200V,V GS=0V - - 1 μA VDS=160V,V GS=0V,TJ=125 ºC - - 100 μA Gate-to-sourceleakagecurrent IGSS VGS=20V,VDS=0V - - 100 nA VGS=-20V,VDS=0V - - -100 nA Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 - 4.0 V Staticdrain-sourceon-resistance RDS(on) VGS=10V,ID=5.4A - 260 400 mΩ Forwardtransconductance gfs VDS=25V,I D=9A - 9.5 - S Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V,f=1.0MHz - 670 - pFOutputcapacitance Coss - 78 - Reversetransfercapacitance Crss - 30 - Totalgatecharge Qg VDD=150V,ID=9A,VGS=0V-10V, - 16 - nCGate-sourcecharge Qgs - 3 - Gate-drain(Miller)charge Qgd - 6 - Resistiveswitchingcharacteristics Turn-ondelaytime Td(ON) VDD=100V,ID=9A,VGS=10V, RG=12Ω - 6.8 - nSRisetime trise - 5.8 - Turn-offdelaytime Td(OFF) - 20 - Falltime tfall - 5 - Source-drainbodydiodecharacteristics TJ=25°C,unlessotherwisenotes Diodeforwardvoltage VSD VGS=0V,IS=9A - - 1.5 V Continuoussourcecurrent 2 ISD IntegralPN-diodeinMOSFET - - 9 A Pulsedsourcecurrent 2 ISM - - 36 A Reverserecoverytime trr IF=9A,diF/dt=100A/μs - 155 - ns Reverserecoverycharge Qrr - 380 - nC Note:1.T J=25°Cto150 °C 2.Pulsewidth< 380μs;dutycycle< 2%. 3.KIAfinishedproductspecificationspleasecustomerbeforeplacingorder,shouldobtainthelatest versionofthefinishedproductspecifications. 3of6 Rev1.1May2016

9.0A，200V N-CHANNELMOSFETKIA SEMICONDUCTORS 4820NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Typicalcharacteristics 4of6 Rev1.1May2016

9.0A，200V N-CHANNELMOSFETKIA SEMICONDUCTORS 4820NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of6 Rev1.1May2016

9.0A，200V N-CHANNELMOSFETKIA SEMICONDUCTORS 4820NKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of6 Rev1.1May2016