4810A KIA

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9A，100V N-CHANNEL MOSFET KIA SEMICONDUCTORS 4810A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1. Features  RDS(ON)=20mΩ@VGS=10V  N-Channel, Logic level 5V  Enhancement mode  Very low on-resistance RDS(ON @VGS=4.5V  Fast Switching  Pb-free lead plating; RoHS compliant 2.Symbol 1 of 5 Rev 1.0 JAN 2016 Pin Function

1 Source

2 Source

3 Source

4 Gate

5 Drain

6 Drain

7 Drain

8 Drain

9A，100V N-CHANNEL MOSFET KIA SEMICONDUCTORS 4810A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 3. Maximum ratings，at TJ=25℃，unless otherwise specified Parameter Symbol Rating Units Drain-source breakdown voltage VDSS 100 V Gate-source voltage TC=25°C VGS +20 V Diode continuous forward current IS 9 A Continuous drain current , VGS@10V TC=25°C ID 9 A TA=100°C 5.8 Pulsed drain current tested1 TC=25°C IDM Maximum power dissipation TA=25°C PD 2 W Avalanche engergy , single pulsed2 L=0.3mH EAS 15 mJ Storage and operating temperature range TSTG TJ -55 to175 ºC 4. Thermal characteristics Parameter Symbol Typ Max Unit Thermal resistance junction-case RθJC - 35 ºC/W Thermal resistance junction-ambient RθJA - 62.5 2 of 5 Rev 1.0 JAN 2016

9A，100V N-CHANNEL MOSFET KIA SEMICONDUCTORS 4810A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5. Electrical characteristics (TC=25°C,unless otherwise noted) Parameter Symbol T est Conditions Min Typ Max Units Drain-source breakdown voltage BVDSS VGS=0V,ID=250μA 100 - - V Drain-source on-resistance3 RDS(on) VGS=10V,ID=9A - 20 25 mΩ VGS=4.5V,ID=5A - 22 28 Gate threshold voltage VGS(TH) VDS= VGS,ID=250uA 1.0 1.5 2.2 V Zero gate voltage Drain Current IDSS VDS=100V, VGS=0V TC=25°C - - 1 μA VDS=100V, VGS=0V TC=125°C - - 100 Gate-source forward leakage IGSS VGS=+20V, VDS=0V - - +100 nA T otal gate charge Qg VDS=50V, ID=8A VGS=10V - 23 - nC Gate-source charge Qgs - 6.5 - Gate-drain charge Qgd - 4.5 - Turn-on delay time td(on) VDD=50V, ID=8A, RG=6.8Ω,VGS=10V - 8 - ns Rise time tr - 5 - Turn-off delay time td(off) - 26 - Fall time tf - 4 - Input capacitance Ciss VDS=24V,VGS=0V f=1MHz - 1880 - pF Output capacitance Coss - 145 - Reverse transfer capacitance Crss - 95 - Diode forward voltage VSD ISD=2A, VGS=0V - 0.71 1.2 V Reverse recovery time trr ISD=10A, VGS=0V dI/dt=100A/μs TJ=25°C - 24 - ns Reverse recovery charge Qrr - 50 - nC Note: 1. Repetitive rating; pulse width limitad by max. junction temperature. 2. Limited by TJMAX,starting TJ=25 ºC,L=0.3mH,RG=25Ω,IAS=10A,VGS=10V,Part not recommended for use above this value. 3. Pulse width <300us;duty cycle <2% 3 of 5 Rev 1.0 JAN 2016

9A，100V N-CHANNEL MOSFET KIA SEMICONDUCTORS 4810A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 6.Typical operating characteristics 4 of 5 Rev 1.0 JAN 2016

9A，100V N-CHANNEL MOSFET KIA SEMICONDUCTORS 4810A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5 of 5 Rev 1.0 JAN 2016