4750S KIA

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Technical content

9A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 4750SKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Applications n Adaptor n Charger n SMPSStandbyPower 2.Features n RoHSCompliant n RDS(on)=0.7 Ω@VGS=10V n Lowgatechargeminimizeswitchingloss n Fastrecoverybodydiode 3. Pinconfiguration 1of6 Rev1.0Mar.2016 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

9A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 4750SKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Parameter Symbol Ratings UnitsTO-252 TO-220 Drain-sourcevoltage VDSS 500 V Gate-sourcevoltage VGSS ±30 V Continuousdraincurrenet ID 9.0 A PulseddraincurrentatV GS=10V IDM 28 32 A SinglepulseAvalancheenergy EAS 400 mJ Peakdioderecoverydv/dt dv/dt 5.5 V/ns Powerdissipation PD 120 120 W Deratingfactorabove25 °C 0.96 0.96 W/°C GatesourceESD(HBM-C=100Pf,R=1.5K Ω VESD(G-S) 4000 V Solderingtemperaturedistanceof 1.6mmfromcasefor10seconds TL 300 °C OperatingandStoragetemperaturerange TJ &TSTG -55~+150 °C Caution:Stressesgreaterthanthoselistedinthe “ Absolutemaximumratings ” maycausepermanent damagetothedevice. 5. Thermalcharacteristics Parameter Symbol Rating UnitTO-252 TO-220 Thermalresistance,Junction-to-case θJC 1.04 ºC/W Thermalresistance,Junction-to-ambient θJA 75 62 ºC/W 2of6 Rev1.0Mar.2016

9A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 4750SKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Unit OffCharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 500 - - V Gatesourcebreakdownvoltage VGSO IGS=±1mA(Opendrain) ±30 - - V Drain-to-sourceleakagecurrent IDSS VDS=500V,V GS=0V - - 1 μA VDS=400V,V GS=0V,TJ=125 ºC - - 100 μA Gate-to-sourceleakagecurrent IGSS VGS=20V,VDS=0V - - 10 uA VGS=-20V,VDS=0V - - -10 uA Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 - 4.0 V Staticdrain-sourceon-resistance RDS(on) VGS=10V,ID=4A - 0.7 0.9 Ω Forwardtransconductance gfs VDS=15V,ID=3A - 8.5 - S Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V,f=1.0MHz - 960 - pF Outputcapacitance Coss - 110 - pF Reversetransfercapacitance Crss - 10 - pF Gateresistance Rg VDS=0V,F=1MHz - 1.3 - Ω Totalgatecharge Qg VDD=30V,,V GS=0V-10V, ID=8A(TO-252)ID=9A(TO-220) - 24 - nC Gate-sourcecharge Qgs - 4.0 - nC Gate-drain(Miller)charge Qgd - 10 - nC Resisitiveswitchingcharacteristics Turn-ondelaytime td(ON) VDD=250V,VGS=10V,Rg=12Ω, ID=8A(TO-252)ID=9A(TO-220) - 11 - nSRisetime trise - 17 - Turn-offdelaytime td(OFF) - 46 - Falltime tfall - 22 - Source-drainbodydiodecharacteristics TJ=25°C,unlessotherwisenotes Diodeforwardvoltage VSD VGS=0V,IS=8A(TO-252) IS=9A(TO-220) - - 1.5 V Continuoussourcecurrent(TO-252) 2 ISD IntergraPN-diodeinMOSFET - - 8 A Continuoussourcecurrent(TO-220) 2 ISD - - 9 A Pulsedsourcecurrent 2 ISM - - 32 A Reverserecoverytime trr diF/dt=100A/μs,V GS=0V IF=8A(TO-252)I F=9A(TO-220) - 175 - ns Reverserecoverycharge Qrr - 750 - nC Note:1.T J=25°Cto150 °C 2.Pulsewidth< 380μs;dutycycle< 2%. 3.KIAfinishedproductspecificationspleasecustomerbeforeplacingorder,shouldobtainthelatest versionofthefinishedproductspecifications. 3of6 Rev1.0Mar.2016

9A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 4750SKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Typicaloperatingcharacteristics 4of6 Rev1.0Mar.2016

9A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 4750SKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of6 Rev1.0Mar.2016

9A，500V N-CHANNELMOSFETKIA SEMICONDUCTORS 4750SKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of6 Rev1.0Mar.2016