4665A KIA

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Technical content

7.5A650V N-CHANNELMOSFETKIA SEMICONDUCTORS 4665AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.GeneralDescription ThisPowerMOSFETisproducedusingKIA’sadvancedplanarstripeDMOStechnology.Thisadvanced technologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitching performance,andwithstandhighenergypulseintheavalancheandcommutationmode.Thesedevices arewellsuitedforhighefficiencyswitchedmodepowersupplies,activepowerfactorcorrectionbasedon halfbridgetopology. 2.Features n 7.5A,650V,R DS(on)typ.=1.1 Ω@VGS =10V n Lowgatecharge(typical25nC) n Highruggedness n Fastswitching n 100%avalanchetested n Improveddv/dtcapability 3. Pinconfiguration 1of6 Rev1.0MAR2017 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

7.5A650V N-CHANNELMOSFETKIA SEMICONDUCTORS 4665AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. OrderingInformation PartNumber Package Brand KNF4665A TO-220F KIA KNP4665A TO-220 KIA 5. Absolutemaximumratings (TC=25ºC,unlessotherwisenoted) Symbol Parameter KNP4665A KNF4665A Units VDSS Drain-SourceVoltage 650 V ID DrainCurrent-Continuous(T C =25ºC) -Continuous(T C =100ºC) 7.5 7.5* A 4.5 4.5* A IDM DrainCurrent -Pulsed (Note1) 30 30* A VGSS Gate-SourceVoltage ±30 V EAS SinglePulsedAvalancheEnergy (Note2) 230 mJ IAR AvalancheCurrent (Note1) 7.5 A EAR RepetitiveAvalancheEnergy (Note1) 21 mJ dv/dt PeakDiodeRecoverydv/dt (Note3) 4.5 V/ns PD PowerDissipation(T C =25ºC) -Derateabove25ºC 147 40 W 1.18 0.32 W/ºC TJ,TSTG OperatingandStorageTemperatureRange -55to+150 ºC TL Maximumleadtemperatureforsolderingpurposes, 1/8"fromcasefor5seconds 300 ºC *Draincurrentlimitedbymaximumjunctiontemperature. 6. ThermalCharacteristics Symbol Parameter KNP4665A KNF4665A Units RθJC ThermalResistance,Junction-to-Case 0.85 3.1 ºC/W RθJS ThermalResistance,Case-to-SinkTyp. 0.5 -- ºC/W RθJA ThermalResistance,Junction-to-Ambient 62.5 62.5 ºC/W 2of6 Rev1.0MAR2017

7.5A650V N-CHANNELMOSFETKIA SEMICONDUCTORS 4665AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7. Electricalcharacteristics (TC=25ºC,unlessotherwisenoted) Symbol Parameter TestConditions Min Typ Max Units OffCharacteristics BVDSS Drain-SourceBreakdownVoltage VGS =0V,I D =250uA 650 -- -- V △BVDSS BreakdownVoltageTemperature Coefficient ID =250uA, Referencedto25ºC -- 0.65 -- V/ºC / △TJ IDSS ZeroGateVoltageDrainCurrent VDS =650V,V GS =0V -- -- 1 uA VDS =520V,T C =125ºC -- -- 10 uA IGSSF Gate-BodyLeakageCurrent,Forward VGS =30V,V DS =0V -- -- 100 nA IGSSR Gate-BodyLeakageCurrent,Reverse VGS =-30V,V DS =0V -- -- -100 nA OnCharacteristics VGS(th) GateThresholdVoltage VDS =V GS,I D =250uA 2.0 -- 4.0 V RDS(on) StaticDrain-SourceOn-Resistance VGS =10V,I D =3.75A -- 1.1 1.4 Ω gFS ForwardTransconductance VDS =40V,I D =3.75A (Note4) -- 6.5 -- S DynamicCharacteristics Ciss InputCapacitance VDS =25V,V GS =0V, f=1.0MHz -- 970 -- pF Coss OutputCapacitance -- 40 -- pF Crss ReverseTransferCapacitance -- 9 -- pF SwitchingCharacteristics td(on) Turn-OnDelayTime VDD =325V,I D =7.5A, RG =25 Ω(Note4.5) -- 28 -- ns tr Turn-OnRiseTime -- 21 -- ns td(off) Turn-OffDelayTime -- 100 -- ns tf Turn-OffFallTime -- 42 -- ns Qg TotalGateCharge VDS =520V,I D =7.5A, VGS =10V (Note4,5) -- 25 -- nC Qgs Gate-SourceCharge -- 5.5 -- nC Qgd Gate-DrainCharge -- 10 -- nC Drain-SourceDiodeCharacteristicsandMaximumRatings IS MaximumContinuousDrain-SourceDiodeForwardCurrent -- -- 7.5 A ISM MaximumPulsedDrain-SourceDiodeForwardCurrent -- -- 30 A VSD Drain-SourceDiodeForwardVoltage VGS =0V,I S =7.5A -- -- 1.4 V trr ReverseRecoveryTime VGS =0V,I S =7.5A, dIF /dt=100A/us (Note4) -- 580 -- ns Qrr ReverseRecoveryCharge -- 5.3 -- nC Notes: 1.RepetitiveRating:Pulsewidthlimitedbymaximumjunctiontemperature 2.L=3.8mH,I AS =7.5A,V DD =50V,R G =25 Ω,StartingT J =25°C 3.I SD ≤7.5A,di/dt ≤200A/us,V DD ≤BVDSS,StartingT J =25°C 4.PulseTest:Pulsewidth ≤300us,Dutycycle ≤2% 5.Essentiallyindependentofoperatingtemperature 3of6 Rev1.0MAR2017

7.5A650V N-CHANNELMOSFETKIA SEMICONDUCTORS 4665AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7. TypicalCharacteristics

7.5A650V N-CHANNELMOSFETKIA SEMICONDUCTORS 4665AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4of6 Rev1.0MAR2017 5of6 Rev1.0MAR2017

7.5A650V N-CHANNELMOSFETKIA SEMICONDUCTORS 4665AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of6 Rev1.0MAR2017