4603A KIA
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7A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 4603AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n RDS(on)=14.5mΩ(typ)@V GS=10V n Superlowgatecharge n Greendeviceavailable n ExcellentCdv/dteffectdecline n Advancedhighcelldensitytrenchtechnology 2.Description TheKIA4603AisthehighcelldensitytrenchedN-chMOSFETs,whichprovideexcellentRDSON andgatechargeformostofthesynchronousbuckconverterapplications.TheKIA4603Ameetthe RoHsandGreenProductrequirement. 3.Symbol 4.Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDSS 30 V Gate-sourcevoltage VGS +20 V ContinuousdraincurrentV GS@10V1 TA=25ºC ID 7.0 ATA=70ºC 5.6 Pulseddraincurrent 2 IDM 35 A Singlepulseavalancheenergy 3 EAS 20 mJ Avalanchecurrent IAS 20 A Totalpowerdissipation 4 TA=25ºC PD 1.5 W Junctionandstoragetemperaturerange TJ, TSTG -55to150 ºC Thermalresistance-junctiontoambient 1 RθJA 85 ºC/W Thermalresistance-junctiontocase 1 RθJC 25 ºC/W 1of4 Rev1.0JUL.2016
7A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 4603AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5.Electricalcharacteristics (TJ=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-Sourcebreakdownvoltage BVDSS VGS=0V,I D=-250μA 30 - - V BVDSS Temperaturecoefficient △BVDSS/ △TJ Referenceto25 °C, ID=1mA - 0.034 - V/°C Drain-SourceLeakageCurrent IDSS VDS=24V,VGS=0V, TJ=25°C - - 1 μAVDS=24V,VGS=0V, TJ=55°C - - 5 Gate-sourceleakagecurrent IGSS VGS=+20V,VDS=0V - - +100 nA Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 1.2 1.5 2.5 V VGS(th) Temperaturecoefficient △VGS(th) - 3.84 - mV/° C Staticdrain-sourceon-resistance 2 RDS(on) VGS=10V,ID=7A - 14.5 18 mΩ VGS=4.5V,ID=4A - 20 26 Forwardtranscendductance gFS VDS=5V,I D=7A - 6.2 - S Diodeforwardvoltage 2 VSD VGS=0V,IS=1A, TJ=25°C - - 1.2 V Gateresistance Rg VDS=0V, VGS=0V,f=1MHz - 1.04 2.1 Ω Totalgatecharge(4.5V) Qg VDS=15V,V GS=4.5V ID =7A - 6 8.4 nCGate-sourcecharge Qgs - 2.2 3.1 Gate-draincharge Qgd - 2 2.8 Turn-ondelaytime td(on) VDD=15V, RG=3.3Ω,V GS=10V ID=7A - 1.2 2.4 nsRisetime tr - 40 72 Turn-offdelaytime td(off) - 18 36 Falltime tf - 7.2 14.4 Inputcapacitance Ciss VGS=0V,V DS=15V F=1.0MHZ - 583 816.2 pFOutputcapacitance Coss - 77 107.8 Reversetransfercapacitance Crss - 59 82.6 Diodecharacteristics Continuoussourcecurrent 1.5 IS VG=VD=0V,Force current - - 7 A Pulsedsourcecurrent 2.5 ISM - - 35 A Reverserecoverytime trr IF=7A,dl/dt=100A/us, TJ=25°C - 7.2 - nS Reverserecoverycharge Qrr - 2.9 - nC Note:1.Thedatatestedbysurfacemountedona1inch 2 FR-4boardwith2OZcopper. 2.Thedatatestedbypulsed,pulsewidth ≤300us,dutycycle ≤2%. 4.Thepowerdissipationislimitedby150 ºCjunctiontemperature. 5.ThedataistheoreticallythesameasI D andI DM,inrealapplications,shouldbelimitedbytotalpower dissipation. 2of4 Rev1.0JUL.2016
7A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 4603AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Testcircuitsandwaveforms 3of4 Rev1.0JUL.2016
7A，30V N-CHANNELMOSFETKIA SEMICONDUCTORS 4603AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4of4 Rev1.0JUL.2016