2N4401 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
isc website： www.iscsemi.com isc &iscsemi isregisteredtrademark1 iscSiliconNPNPowerTransistor 2N4401
DESCRIPTION
- WithTO-92 packaging
- VeryhighDCcurrentgain
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- AC-DCmotorcontrol
- Electronicignition
- Alternatorregulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 60 V VCEO Collector-EmitterVoltage 40 V VEBO Emitter-BaseVoltage 6 V IC CollectorCurrent-Continuous 0.6 A ICM CollectorCurrent-Peak 1.2 A PT TotalPowerDissipation 1.5 W Tj Max.JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-a ThermalResistance,JunctiontoAmbient 83.3 ℃/W
isc website： www.iscsemi.com isc &iscsemi isregisteredtrademark2 iscSiliconNPNPowerTransistor 2N4401 ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BVCEO Collector-EmitterSustainingVoltage IC=1mA,IB=0 40 V VCE(sat)-1 Collector-EmitterSaturationVoltage IC=150mA,IB=15mA 0.4 V VCE(sat)-2 Collector-EmitterSaturationVoltage IC=500mA,IB=50mA 0.75 V VBE(sat)-1 Base-EmitterSaturationVoltage IC=150mA,IB=15mA 0.95 V VBE(sat)-2 Base-EmitterSaturationVoltage IC=500mA,IB=50mA 1.2 V ICBO CollectorCutoffCurrent VCB=60V,IE=0 0.1 μA IEBO EmitterCutoffCurrent VEB=5V;IC=0 0.1 μA hFE-1 DCCurrentGain IC=0.1mA;VCE=1V 20 hFE-2 DCCurrentGain IC=1mA;VCE=1V 40 hFE-3 DCCurrentGain IC=10mA;VCE=1V 80 hFE-4 DCCurrentGain IC=150mA;VCE=1V 100 300 hFE-5 DCCurrentGain IC=500mA;VCE=2V 40