4360A KIA
Document overview
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Technical content
4.0A600V N-CHANNELMOSFETKIA SEMICONDUCTORS 4360AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n RDS(ON) =1.9Ω(typ.)@V GS=10V,I D=2A n Fastswitching n 100% avalanchetested n Improveddv/dtcapability 2.Application n Highfrequencyswitchingmodepowersupply n UninterruptiblePowerSupply(UPS) n Electronicballast 3. Pinconfiguration 1of7 Rev1.0MAR2017 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
4.0A600V N-CHANNELMOSFETKIA SEMICONDUCTORS 4360AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. OrderingInformation PartNumber Package Brand KND4360A TO-252 KIA KNU4360A TO-251 KIA KNP4360A TO-220 KIA KNF4360A TO-220F KIA 5. Absolutemaximumratings (TC=25ºC,unlessotherwisespecified) Parameter Symbol Rating UnitsTO220 TO220F TO251 TO252 Drain-sourcevoltage VDSS 600 V Gate-sourcevoltage VGSS ±30 V Drain current continuous TC=25ºC ID 4.0 4.0* 4* A TC=100ºC 2.78 2.78* 2.78* A Draincurrentpulsed(note1) IDM 16 16* 16* A Avalancheenergy Singlepulse(note2) EAS 180 mJ Peakdioderecoverydv/dt(note3) dv/dt 4.8 V/ns Totalpowerdissipation TC=25ºC PD 100 44.6 44.6 W Derateabove25ºC 0.8 0.357 0.357 W/ºC ThermalResistanceJunctiontoCase RθJC 1.25 3.75 2.8 ºC/W Storagetemperature TSTG -55~+150 ºC *Draincurrentlimitedbymaximumjunctiontemperature. 2of7 Rev1.0Mar.2017
4.0A600V N-CHANNELMOSFETKIA SEMICONDUCTORS 4360AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Unit Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 600 - - V Zerogatevoltagedraincurrent IDSS VDS=600V,V GS=0V - - 1 μA VDS=480V,T C=125ºC - - 10 μA Gate-bodyleakage Current Forward IGSS VGS=30V,VDS=0V - - 100 nA Reverse VGS=-30V,VDS=0V - - -100 nA Breakdownvoltagetemperature coefficient △BvDSS/△TJ Referenceto25ºC ID=250μA - 0.65 - V/ºC Oncharacteristics Gatethresholdvoltage(note4) VGS(TH) VDS=VGS,I D=250μA 2.0 - 4.0 V Staticdrain-sourceon-resistance RDS(ON) VGS=10V,ID=2.0A - 1.9 2.3 Ω ForwardTransconductance GFS VDS=30V,ID=2.0A - 5.5 - S Dynamiccharacteristics Inputcapacitance CISS VDS=25V,VGS=0V, f=1MHz - 511 - pF Outputcapacitance COSS - 56.6 - pF Reversetransfercapacitance CRSS - 5.55 - pF Switchingcharacteristics Turn-ondelaytime tD(ON) VDD=300V,ID=4.0A, RG=10Ω,VGS=10V - 11.3 - ns Risetime tR - 14.7 - ns Turn-offdelaytime tD(OFF) - 37.6 - ns Falltime tF - 10.4 - ns Totalgatecharge QG VDD=480V, ID=4.0A VGS=10V - 15.3 - nC Gate-sourcecharge QGS - 2.45 - nC Gate-draincharge QGD - 6.56 - nC Drain-sourcediodecharacteristics Drain-sourcediodeforwardvoltage VSD VGS=0V,I SD=4.0A - - 1.4 V Continuousdrain-sourcecurrent ISD - - 4 A Pulseddrain-sourcecurrent ISM - - 16 A Reverserecoverytime tRR VGS=0V,IF=4A di/dt=100A/μs - 315 - ns Reverserecoverycharge QRR - 1.83 - μC Notes:1.Repetitiverating:pulsewidthlimitedbymaximumjunctiontemperature 2.L=10mH,I AS=6.0A,V DD=50V,R G=25Ω,startingT J=25ºC 3.I SD<4.0A,di/dt<200A/μs,V DD<BVDSS,startingT J=25ºC 4.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 3of7 Rev1.0Mar.2017
4.0A600V N-CHANNELMOSFETKIA SEMICONDUCTORS 4360AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of7 Rev1.0Mar.2017
4.0A600V N-CHANNELMOSFETKIA SEMICONDUCTORS 4360AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of7 Rev1.0Mar.2017
4.0A600V N-CHANNELMOSFETKIA SEMICONDUCTORS 4360AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of7 Rev1.0Mar.2017
4.0A600V N-CHANNELMOSFETKIA SEMICONDUCTORS 4360AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7of7 Rev1.0Mar.2017