4119

SST4117-T1-E3 VISHAY

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Document Number: 70239 S-41231—Rev. G, 28-Jun-04 www.vishay.com N-Channel JFETs 2N4117A PN4117A SST4117 2N4118A PN4118A SST4118 2N4119A PN4119A SST4119 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (/C0109S) IDSS Min (/C0109A) 4117 −0.6 to −1.8 −40 70 30 4118 −1 to −3 −40 80 80 4119 −2 to −6 −40 100 200 FEATURES BENEFITS APPLICATIONS /C0068Ultra-Low Leakage: 0.2 pA /C0068Very Low Current/Voltage Operation /C0068Ultrahigh Input Impedance /C0068Low Noise /C0068Insignificant Signal Loss/Error Voltage with High-Impedance Source /C0068Low Power Consumption (Battery) /C0068Maximum Signal Output, Low Noise /C0068High Sensitivity to Low-Level Signals /C0068High-Impedance Transducer Amplifiers /C0068Smoke Detector Input /C0068Infrared Detector Amplifier /C0068Precision Test Equipment

DESCRIPTION

The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers. The hermetically sealed TO-206AF package allows full military processing per MIL-S-19500 (see Military Information). The TO-226A (TO-92) plastic package provides a low-cost option. The TO-236 (SOT-23) package provides surface-mount capability. Both the PN and SST series are available in tape-and-reel for automated assembly (see Packaging Information). G S TO-206AF (TO-72) D Top View 2N4117A 2N4118A 2N4119A C D G Top View PN4117A PN4118A PN4119A TO-226AA (TO-92) S D S G TO-236 (SOT-23) Top View SST4117 (T7)* SST4118 (T8)* SST4119 (T9)* *Marking Code for TO-236 For applications information see AN105.

www.vishay.com Document Number: 70239 S-41231—Rev. G, 28-Jun-04 ABSOLUTE MAXIMUM RATINGS Operating Junction Temperature : Power Dissipation (case 25/C0095C) : Notes a. Derate 2 mW/ /C0095C above 25/C0095C b. Derate 2.8 mW/ /C0095C above 25/C0095C SPECIFICATIONS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Limits 4117 4118 4119 Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS IG = −1 /C0109A , VDS = 0 V −70 −40 −40 −40 V Gate-Source Cutoff Voltage VGS(off) VDS = 10 V, ID = 1 nA −0.6 −1.8 −1 −3 −2 −6 V Saturation Drain Current IDSS VDS = 10 V, VGS = 0 V 30 90 80 240 200 600 /C0109A VGS = −20 V VDS = 0 V −0.2 −1 −1 −1 pA Gt R C t I VGS = −20 V VDS = 0 V TA = 150/C0095C Gate Reverse Current IGSS VGS = −10 V PN −0.2 −1 −1 −1 pAVGS = −10 V VDS = 0 V SST −0.2 −10 −10 −10 pA VGS = −10 V VDS = 0 V TA = 100/C0095C Gate Operating Currentb IG VDG = 15 V, ID = 30 /C0109A −0.2 pADrain Cutoff Currentb ID(off) VDS = 10 V, VGS = −8 V 0.2 pA Gate-Source Forward Voltageb VGS(F) IG = 1 mA , VDS = 0 V 0.7 V Dynamic Common-Source Forward Transconductance gfs VDS = 10 V, VGS = 0 V 70 210 80 250 100 330 /C0109SCommon-Source Output Conductance gos VDS = 10 V, VGS = 0 V f = 1 kHz 3 5 10 /C0109S Common-Source Ci 2N/PN 1.2 3 3 3Common-Source Input Capacitance Ciss VDS = 10 V VGS = 0 V SST 1.2 pF Common-Source C VGS = 0 V f = 1 MHz 2N/PN 0.3 1.5 1.5 1.5 pF Common-Source Reverse Transfer Capacitance Crss f = 1 MHz SST 0.3 Equivalent Input Noise Voltageb en VDS = 10 V, VGS = 0 V f = 1 kHz 15 nV⁄ √Hz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NT b. This parameter not registered with JEDEC.

Document Number: 70239 S-41231—Rev. G, 28-Jun-04 www.vishay.com TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Gate Leakage Current Drain Current and Transconductance vs. Gate-Source Cutoff Voltage Common-Source Forward Transconductance vs. Drain Current On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage Output Characteristics 1000 800 06 3 0 gfs IDSS TA = 25/C0095C 100 mA IGSS @ 25/C0095C 100 mA Output Characteristics 500 400 300 100 −0.5 V −1.0 V −2.0 V −1.5 V VGS = 0 V 0.01 0.1 1 200 160 120 rDS @ ID = 10 /C0109A, VGS = 0 V gos @ VDS = 10 V, VGS = 0 V f = 1 kHz rDS gos TA = −55/C0095C 125/C0095C VDS = 10 V f = 1 kHz 100 01 6 842 0 VGS = 0 V −0.5 V −0.4 V −0.3 V −0.2 V −0.1 V VGS(off) − Gate-Source Cutoff Voltage (V) VDS − Drain-Source Voltage (V) VDG − Drain-Gate Voltage (V) ID − Drain Current (mA)VGS(off) − Gate-Source Cutoff Voltage (V) VDS − Drain-Source Voltage (V) 600 400 200 12 18 24 25/C0095C VGS(off) = −0.7 V VGS(off) = −2.5 V 20040 12 0 16 842 0 12 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 300 240 180 120 10 mA 0.1 pA 1 pA 10 pA 100 pA 1 nA IGSS @ 125/C0095C VGS(off) = −2.5 V 10 mA VGS(off) = −2.5 V IDSS − Saturation Drain Current (µA) gfs − Forward Transconductance (µS)gos − Output Conductance (µS) gfs − Forward Transconductance (µS) IG − Gate Leakage ID − Drain Current (µA) ID − Drain Current (µA) TA = 125/C0095C rDS(on) − Drain-Source On-Resistance (k/C0087)

www.vishay.com Document Number: 70239 S-41231—Rev. G, 28-Jun-04 TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) 300 240 180 Transconductance vs. Gate-Source VoltageTransfer Characteristics Transconductance vs. Gate-Source VoltageTransfer Characteristics Common-Source Input Capacitance vs. Gate-Source VoltageCircuit Voltage Gain vs. Drain Current 500 0 −4 −5−2−1 TA = −55/C0095C 125/C0095C 100 200 160 120 TA = 125/C0095C −55/C0095C TA = −55/C0095C 125/C0095C VDS = 10 V VDS = 10 V f = 1 kHz VDS = 10 V VDS = 10 V f = 1 kHz TA = −55/C0095C 125/C0095C 0.1 10.01 100 VGS(off) = −0.7 V −2.5 V RL /C004310 V ID Assume VDD = 15 V, VDS = 5 V 2.0 f = 1 MHz VDS = 0 V 10 V VGS − Gate-Source Voltage (V) ID − Drain Current (mA) VGS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V) V GS − Gate-Source Voltage (V) VGS − Gate-Source Voltage (V) VGS(off) = −0.7 V VGS(off) = −0.7 V VGS(off) = −2.5 V VGS(off) = −2.5 V 25/C0095C 25/C0095C 120 400 300 100 200 1.6 1.2 0.4 0.8 AV /C0043 gfs RL 1 /C0041RLgos 25/C0095C 25/C0095C gfs − Forward Transconductance (µS) g fs − Forward Transconductance (µS) AV − Voltage Gain Ciss − Input Capacitance (pF) ID − Drain Current (µA) I D − Drain Current (µA)

Document Number: 70239 S-41231—Rev. G, 28-Jun-04 www.vishay.com TYPICAL CHARACTERISTICS (TA = 25/C0095C UNLESS OTHERWISE NOTED) 0.01 0.1 1 Equivalent Input Noise Voltage vs. Frequency ID − Drain Current (mA) Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage On-Resistance vs. Drain CurrentOutput Conductance vs. Drain Current VDS = 10 V f = 1 kHz 0.5 0 −8 −20−16−4 0.4 0.3 0.1 f = 1 MHz VDS = 0 V 10 V 10 100 1 k 100 k 10 k 200 VDS = 10 V ID = 10 mA VGS = 0 V TA = −55/C0095C 125/C0095C ID − Drain Current (mA) VGS − Gate-Source Voltage (V) f − Frequency (Hz) 0.2 160 120 −12 VGS(off) = −2.5 V 0.01 0.1 1 VGS(off) = −0.7 V −2.5 V TA = 25/C0095C 25/C0095C en − Noise Voltage nV / HzrDS(on) − Drain-Source On-Resistance ( Ω ) gos − Output Conductance (µS) Crss − Reverse Feedback Capacitance (pF)

Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1 Disclaimer Legal Disclaimer Notice Vishay All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all li ability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permit ted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.