4100PT NELLSEMI
Document overview
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Technical content
Features
DC□motor□control Controlled□DC□power□supplies AC□controllers Phase□Control Thyristors 4100PT□Series l l 73.2□(2.88)DIA. MAX. 99□(3.90)DIA. MAX. 35□(1.48) MAX. 112□(4.41)DIA.MAX. l E□□TYPE All□dimensions□in□millimeters□(□inches□) E (4) Mean□on-state□current Repetitive□peak□reverse□voltage Surge□on-state□current For□fusing□coordination Max.□Forward□voltage□drop Threshold□voltage Thermal resistance(junction to heatsink) Double□side□cooled□, T hs =□55□□C VDRM &□VRRM tp=10ms VR =□0.6V RRM 4100 A V KA A sx10 V K/□W IT(AV) VRRM ITSM I t VO Rth(□c-h□) mΩ Parameter Condition Value Unit KN VDRM Repetitive□peak□off-state□□voltage rt On-state□slope□resistance dv/dt Cirtical□rate□of□rise□of□off-state□voltage VDM=0.67□V DRM diT/dt Cirtical rate of rise of turned-on current IGT Gate□trigger□current Gate□trigger□voltage Holding□current Fm Mounting□force Double□side□cooled□,□clamping□force□8.0□KN VDsM□& VRsM =□VDRM &□VRRM +□100V V/□□s mA A/□□s 1200 20.5 0.85 0.07 150 300 3.0 0.011 4735 Min. Type Max. μ μ IT(RMS) Double□side□cooled□, T hs=25□□C 800 8161 A VTM 1.55 V 1000 VGT IH 1000 mA VA=12V□,□I A=1A -□40 -□40 150 V W C PG Tstg Symbol Mean□forward□gate□power Storage□temperature Max.□RMS□on-state□current Tj=25□C ITM=3000A wt Approximate□weight 1600 g IRRMIDRM Repetitive□peak□reverse□current VD=VDRM VR=VRRM 200 mA VGD DC□voltage□notto□trigger At76%□V DRM , Tj=Tj MAX V0.25 CMax.operating□temperaturerange 125Tj RoHSRoHS SEMICONDUCTOR