40N20A KIA
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Technical content
40A，200V N-CHANNELMOSFET KIA SEMICONDUCTORS 40N20AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n RDS(ON)=0.08Ω@VGS=10V n RoHS compliant n Low on resistance n Low gate charge n Fast switching 2.Applications n DC-DCconverters n DC-ACconvertersforUPS n SMPSandmotorcontrols 3.Symbol 1of5 Rev1.1JAN2014 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
40A，200V N-CHANNELMOSFET KIA SEMICONDUCTORS 40N20AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25°C,unlessotherwisespecified) Parameter Symbol Rating Units Drain-sourcevoltage VDSS 200 V Continuousdraincurrent ID 40 A ContinuousdraincurrentT C=100 ºC 19.2 A Pulseddraincurrent,V GS@10V (note*1) IDM 120 A Powerdissipation PD 175 W Deratingfactorabove25 ºC 1.43 W/ºC Gate-sourcevoltage VGS +30 V Singlepulseavalancheenergy (note*2) EAS 800 mJ Avalanchecurrent (note*1) IAR 32 A Repetitiveavalancheenergy (note*1) EAR 17.5 mJ Peakdioderecoverydv/dt (note*3) dv/dt 4.5 V/ns Operatingjunctionandstoragetemperature range TJ ,TSTG -55to150 ºC Maximumtemperatureforsoldering 1/8″ fromcasefor5seconds TL 300 ºC 5. Thermalcharacteristics Parameter Symbol TO-220 TO-3P Unit Junction-case RθJC 0.49 0.6 ºC/W Case-sinktyp RθJS 0.5 - Junction-ambient RθJA 62.5 60 ºC/W 2of5 Rev1.1JAN2014
40A，200V N-CHANNELMOSFET KIA SEMICONDUCTORS 40N20AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisespecified) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 200 - - V Breakdownvoltagetemperaturecoefficient Figure11 △BVDSS/△TJ Reference25 ℃ ID=250uA - 0.2 - V/ºC Drain-sourceleakagecurrent IDSS VDS=200V,V GS=0V - - 1 μAVDS=160V, TJ=125°C - - 10 Gate-sourceforwardleakage IGSS VGS=30V - - 100 nAGate-sourcereverseleakage VGS=-30V - - -100 Drain-sourceon-resistanceFigure9and10 RDS(on) VGS=10V,ID=16A - 0.08 0.1 Ω Gatethresholdvoltage,Figure12 VGS(TH) VDS=V GS, ID=250uA 2 - 4 V Forwardtransconductance gfs VDS=40V,I D=16A (note*4) - 22 - S Inputcapacitance Ciss VDS=25V,VGS=0V f=1MHz Figure14 - 1560 - pFOutputcapacitance Coss - 370 - Reversetransfercapacitance Crss - 150 - Turn-ondelaytime td(on) VDD=100V,I D=32A, RG=25Ω,VGS=10V - 26 - nsRisetime tr - 32 - Turn-offdelaytime td(off) - 141 - Falltime tf - 83 - Totalgatecharge Qg VDS=160V,I D=32A, VGS=10V - 50 - nCGate-sourcecharge Qgs - 12 - Gate-drain( “Miller”)charge Qgd - 22 - Continuoussourcecurrent （bodydiode ） IS Integralpn-diode inMOSFET - - 40 AMaximumpulsedcurrent （bodydiode ） ISM - - 128 Diodeforwardvoltage VSD IS=32A,V GS=0V - - 1.4 V Reverserecoverytime trr IS=32A,V GS=0V dI/dt=100A/μs - 215 - ns Reverserecoverycharge Qrr - 1.8 - uC Note:*1.I AS=32A,V DD=50V,R G=25Ω,T J=25°C *2.Repetitiverating;pulsewidthlimitedbymaximumjunctiontemperature. *3.I SD< 40Adi/dt< 200A/μs,V DD < BVDSS，TJ=175°C. *4.Pulsewidth< 300μs,dutycycle< 2%. *5.Essentianllyindependentofoperatingtemperature. 3of5 Rev1.1JAN2014
40A，200V N-CHANNELMOSFET KIA SEMICONDUCTORS 40N20AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Typicaloperatingcharacteristics 4of5 Rev1.1JAN2014
40A，200V N-CHANNELMOSFET KIA SEMICONDUCTORS 40N20AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1JAN2014