40N10 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 40N10
- FEATURES
- Drain Current I D= 40A@ TC=25℃
- Drain Source Voltage- : V DSS= 100V(Min)
- Static Drain-Source On-Resistance : R DS(on) = 0.04Ω(Max)
- Fast Switching
- APPLICATIONS
- Switching power supplies,converters,AC and DC motor controls
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 40 A IDM Drain Current-Single Plused 100 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃
- THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.833 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W PDF pdfFactory Pro www.fineprint.cn
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 40N10
- ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 100 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V VSD Diode Forward On-voltage IS= 40A ;VGS= 0 3.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 20A 0.04 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS=80V; VGS= 0 1 µA Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 5000 pF Crss Reverse Transfer capacitance 1000 Coss Output Capacitance 2500 tr Rise Time VGS=10V; ID=20A; VDD=50V; RL=2.5Ω ns td(on) Turn-on Delay Time 17 tf Fall Time 20 td(off) Turn-off Delay Time 42 PDF pdfFactory Pro www.fineprint.cn