40N06B KIA

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38A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 40N06BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description TheKIA40N06BisthehighestperformancetrenchN-chMOSFETswithextremehighcell density,whichprovideexcellentRDSONandgatechargeformostofthesynchronousbuckconverter applications.TheKIA40N06BmeettheRoHSandGreenProductrequirenment,100%EASguaranteedwith fullfunctionreliabilityapproved. 2.Features n RDS(on)=14mΩ@ VDS=60V n Avanced high cell density Trench technology n Super Low Gate Charge n Excellent Cdv/dt effect decline n 100%EAS Guaranteed n Green Device Available 3.Applications n HighFrequencyPoint-of-LoadSynchronousBuckConverterforMB/NB/UMPC/VGA n NetworkingDC-DCPowerSystem n LCD/LEDbacklight 4.Symbol 1of5 Rev1.1JAN2014 Pin Function

1 Gate

2 Drain

3 Source

38A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 40N06BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5. Absolutemaximumratings Parameter Symbol Rating Units Drain-sourcevoltage VDS 60 V Gate-sourcevoltage VGS +20 V Continuousdraincurrent, VGS @10V1 TC=25ºC ID 38 A TC=100ºC 30 A Pulseddraincurrent 2 IDM 80 A Singlepulseavalancheenergy 3 EAS 67 mJ Avalanchecurrent IAS 28 A Totalpowerdissipation 4 TC=25 ºC PD 45 W Operationjunctiontemperaturerange TJ -55to150 ºC Storagetemperaturerange TSTG -55to150 ºC 6. Thermalcharacteristics Parameter Symbol Typ Max Unit Thermalresistance,Junction-ambient 1 RθJA -- 62 ºC/W Thermalresistance,Junction-case 1 RθJC -- 2.8 2of5 Rev1.1JAN2014

38A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 40N06BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7. Electricalcharacteristics (TJ=25°C,unlessotherwisenoted Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 60 - - V BVDSS temperaturecoefficient △BVDSS/△TJ Referenceto25 ºC, ID=1mA 0.057 V/°C Staticdrain-sourceon-resistance 2 RDS(on) VGS=10V,ID=15A 14 18 mΩ VGS=4.5V,ID=10A 16 20 Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 1.2 2.5 V VGS(th) temperaturecoefficient △VGS(th) -5.68 mV/°C Drain-sourceleakagecurrent IDSS VDS=48V,V GS=0V TJ=25°C 1 μA VDS=48V,V GS=0V TJ=55°C 5 μA Gate-sourceleakagecurrent IGSS VGS=+20V,V DS=0V +100 nA Forwardtransconductance gfs VDS=5V,I D=15A 45 S Gateresistance Rg VDS=0V,V GS=0V,f=1MHz 1.7 3.4 Ω Totalgatecharge(4.5V) Qg VDS=48V,V GS=4.5V ID =12A - 17.6 nCGate-sourcecharge Qgs 5.35 Gate-draincharge Qgd 6.81 Turn-ondelaytime td(on) VDD=15V,ID=1A, RG=3.3Ω,V GS=10V 15.5 nsRisetime tr 2.2 Turn-offdelaytime td(off) 72.8 Falltime tf 3.8 Inputcapacitance Ciss VDS=15V,VGS=0V, f=1MHz 2423 pFOutputcapacitance Coss 145 Reversetransfercapacitance Crss 97 Singlepulseavalancheenergy 5 EAS VDD=25V,L=0.1mH, IAS=15A 19 mJ Continuoussourcecurrent 1,6 IS VG=V D==0V, Forcecurrent 38 A Pulsedsourcecurrent 2,6 ISM 80 A Diodeforwardvoltage 2 VSD VGS=0V,IS=1A,T J=25ºC 1 V Note:1.Thedatatestedbysurfacemountedona1inch 2 FR-4boardwith20Zcopper. 2.Thedatatestedbypulsed,pulsewidth< 300μs,dutycycle< 2% 3.TheEASdatashowsMax.rating.ThetestconditionisV DD=25V,V GS=10V,L=0.1mH,IAS=28A 4.Thepowerdissipationislimitedby150 °Cjunctiontemperature 5.TheMin,valueis100%EAStestedguarantee. 6.ThedataistheoreticallythesameasI D andI DM,inrealapplications,shouldbelimitedbytotal powerdissipation. 3of5 Rev1.1JAN2014

38A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 40N06BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8.Testcircuitsandwaveforms 4of5 Rev1.1JAN2014

38A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 40N06BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1JAN2014