40EPU06 NELLSEMI

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SEMICONDUCTOR 40EPU06 Series RoHS RoHS Ultrafast Soft Recovery Diode, 40A / 600V

FEATURES

175 °C operating junction temperature Designed and qualified for industrial level BENEFITS Reduced RFI and EMI Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Cathode to anode voltage 600 Continuous forward current lF(AV) TC = 110 °C 40 A Single pulse forward current lFSM 360 Operating junction and storage temperatures - 55 to 175 ELECTRICAL SPECIFICATIONS (TJ = 25 unless otherwise specified)ºC TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage V Forward voltage Reverse leakage current Junction capacitance PRODUCT SUMMARY IF(AV) trr VR 22 ns 40 A 600 V pF µA Nell High Power Products FRED VR T , Tj Stg TC = 25 °C V VBR VF lR CT l = 100µAR 600 - - l = 40AF l = 40A, F T = 125°CJ V = R V ratedR T = 150°C, J V = V ratedR R V = 200VR 1.50 1.70 1.20 500- l = 80AF 1.8- - Page 1 of 6www.nellsemi.com PARAMETER SYMBOL TO-247AC modified Cathode Anode Anode Cathode Anode to base Cathode to base 1 3 TO-247AB 40EPU06 40APU06 Planar FRED Chip

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 unless otherwise specified)ºC MIN. TYP. MAX. UNITS Reverse recovery time ns IF = 40 A dI /dt = 200 A/µsF VR = 400 V Peak recovery current A Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS MIN. TYP. MAX. UNITS Thermal resistance, junction to case °C/W Thermal resistance, case to heatsink Mounting surface, flat, smooth and greased Weight Mounting torque N ⋅ m Marking device Case style TO-247AC modified Case style TO-247AC - - ( )5 (10) (lbf . in) 0.6 1.2 165 I = 0.5A, I = 1A, I =0.25A F R RR (RG#1 CKT) 40EPU06 40APU06 36 45- trr lRRM Qrr I = 1A, dI /dt = 100 A/µs, V =30V, T =25°CF F R J T = 25°CJ T = 125°CJ T = 25°CJ T = 125°CJ T = 25°CJ T = 125°CJ 480 RthJC RthCS 0.67 0.3 5.5 0.2 - g oz. PARAMETER SYMBOL TEST CONDITIONS PARAMETER SYMBOL TEST CONDITIONS Fig.2 Typical values of reverse current vs. reverse voltage Reverse current, lR (µA) Reverse voltage, VR (V) 1000 100 0.1 0.01 0.001 0 100 200 300 400 500 600 0.0001 Fig.1 Forward current vs. forward voltage Anode-to-cathode voltage, VF (V) Forward current, IF (A) 120 100 T =125°CJ T =175°CJ T =25°CJ T =-55°CJ Page 2 of 6www.nellsemi.com SEMICONDUCTOR 40EPU06 Series RoHS RoHS Nell High Power Products Thermal resistance, junction to ambient RthJA 40 T =175°J T =150°J T =125°J T =100°J T =25°J

10-5 10-4 10-3 10-2 10-1 1.0 Fig.3b Transient thermal impedance model Fig.3a Maximum effective transient thermal impedance, junction-to-case vs. pulse duration Rectangular pulse duration (seconds) Thermal impedance, ZθJC (°C/W) 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0.5 SINGLE PULSE 0.1 0.3 0.7 0.05 D = 0.9 0.289 0.381 0.00448 0.120 Power (watts) RC MODEL Junction temp (°C) Case temperature (°C) 100 200 Fig.4 Junction capacitance vs. reverse voltage reverse voltage, VR (V) Junction capacitance, CJ (pF) 1 10 200 180 160 140 120 100 See note (1) DC Square wave (D = 0.5) Rated V appliedR Fig.5 Max. allowable case temperature Vs. average forward current Allowable case temperature (°C) 100 120 140 160 180 35302520100 605045 Average forward current I (A)F(AV) Page 3 of 6www.nellsemi.com SEMICONDUCTOR 40EPU06 Series RoHS RoHS Nell High Power Products PDM Note: Duty Factor D =t /t1 2 Peak T = P xZ +TJ DM θJC C

40 E P U 06

  • Current rating (40 = 40A) 3 - TO-247AC (Modified) or TO-247AB Voltage R a t ing (06 = 600 V)5 Ultrafast Recovery Single Diode Ordering Information Table Device code E = 2 pins A = 3 pins Fig.6 Reverse recovery time vs. current rate of change 0 200 400 600 800 1000 1200 Current rate of change, -di /dt F (A/μs) Reverse recovery time, trr (ns) 20A 40A 80A 180 160 140 120 100 Fig 7. Reverse recovery current vs. current rate of change 0 200 400 600 800 1000 1200 Current rate of change, -di /dt F (A/μs) Reverse recovery current, lRRM (A) 25 80A 40A 20A T = 125°CJ V = 400VR T = 125°CJ V = 400VR Fig.8 Reverse recovery charge vs. current rate of change 0 200 400 600 800 1000 1200 Current rate of change, -di /dt F (A/μs) Reverse recovery charge, Qrr (nC) 80A 20A 40A 1400 1200 1000 800 600 400 200 T = 125°CJ V = 400VR Page 4 of 6www.nellsemi.com SEMICONDUCTOR 40EPU06 Series RoHS RoHS Nell High Power Products

Fig.9 Reverse recovery parameter test circuit Fig.10 Reverse recovery waveform and definitions Page 5 of 6www.nellsemi.com SEMICONDUCTOR 40EPU06 Series RoHS RoHS Nell High Power Products

Page 6 of 6www.nellsemi.com 2.21 (0.087) 2.59 (0.102) 0.40 (0.016) 0.79 (0.031) 1.49 (0.059) 2.49 (0.098) 4.69 (0.185) 5.31 (0.209) 10.90 (0.43) (TYP.) 1.01 (0.040) 1.40 (0.055) 19.81 (0.780) 20.32 (0.800) 4.50 (0.177)Max 20.80 (0.819) 21.46 (0.845) 16.15 (0.242) 15.49 (0.610) 16.26 (0.640) 5.38 (0.212) 6.20 (0.244) 3.55 (0.138) 3.81 (0.150) 1.65 (0.065) 2.13 (0.084) (TYP.) 2.21 (0.087) 2.59 (0.102) 0.40 (0.016) 0.79 (0.031) 1.49 (0.059) 2.49 (0.098) 4.69 (0.185) 5.31 (0.209) 1.01 (0.040) 1.40 (0.055) (TYP.) 1.01 (0.040) 1.40 (0.055) 19.81 (0.780) 20.32 (0.800) 4.50 (0.177)Max 20.80 (0.819) 21.46 (0.845) 16.15 (0.242) 15.49 (0.610) 16.26 (0.640) 5.38 (0.212) 6.20 (0.244) 3.55 (0.138) 3.81 (0.150) 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) 2.13 (0.084) (TYP.) Conforms to JEDEC Outline TO-247AC (Modified) Dimensions in millimeters and (inches) Conforms to JEDEC Outline TO-247AB Dimensions in millimeters and (inches) Cathode Anode Anode Anode 1 3 40APU06 3 plins 40EPU06 2 plins CATHODE TO BASE CATHODE TO BASE 1 2 3 1 2 3 SEMICONDUCTOR 40EPU06 Series RoHS RoHS Nell High Power Products