40EPS16PBF VISHAY
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Document Number: 94344 For technical ques tions, contact: diodes-tech@vishay.com www.vishay.com Revision: 23-Apr-08 1 Input Rectifier Diode, 40 A 40EPS16PbF High Voltage Series Vishay High Power Products DESCRIPTION/FEATURES The 40EPS16PbF rectifier High Voltage Series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature. Typical applications are in input rectification and these products are designed to be used with Vishay HPP switches and output rectifiers which are available in identical package outlines. This product has been designed and qualified for industrial level and lead (Pb)-free. PRODUCT SUMMARY VF at 20 A 1 V IFSM 475 A VRRM 1600 V TO-247AC modified Base cathode 1 3 Anode Cathode Available Pb-free RoHS* COMPLIANT MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS IF(AV) Sinusoidal waveform 40 A VRRM 1600 V IFSM 475 A VF 20 A, TJ = 25 °C 1.0 V TJ - 40 to 150 °C VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA 40EPS16PbF 1600 1700 1 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I F(AV) TC = 105 °C, 180° conduction half sine wave 40 AMaximum peak one cycle non-repetitive surge current IFSM 10 ms sine pulse, rated VRRM applied 400 10 ms sine pulse, no voltage reapplied 475 Maximum I2t for fusing I 2t 10 ms sine pulse, rated VRRM applied 800 A2s 10 ms sine pulse, no voltage reapplied 1131 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 11 310 A 2√s * Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com For technical questi ons, contact: diodes-tech@vishay.com Document Number: 94344
2 Revision: 23-Apr-08
40EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum forward voltage drop V FM 40 A, TJ = 25 °C 1.14 V Forward slope resistance r t TJ = 150 °C 7.6 m Ω Threshold voltage V F(TO) 0.72 V Maximum reverse leakage current I RM TJ = 25 °C VR = Rated VRRM 0.1 mA TJ = 150 °C 1.0 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage temperature range TJ, TStg - 40 to 150 °C Maximum thermal resistance, junction to case RthJC DC operation 0.6 °C/WMaximum thermal resistance, junction to ambient RthJA 40 Typical thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased 0.2 Approximate weight 0.21 oz. Mounting torque minimum 6 (5) kgf · cm (lbf · in)maximum 12 (10) Marking device Case style TO-247AC modified (JEDEC) 40EPS16
Document Number: 94344 For technical ques tions, contact: diodes-tech@vishay.com www.vishay.com Revision: 23-Apr-08 3 40EPS16PbF High Voltage Series Input Rectifier Diode, 40 A Vishay High Power Products Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Fig. 5 - Forward Voltage Drop Chacteristics Fig. 6 - Maximum Non-Repetitive Surge Current 130 125 120 115 110 105 100 135 140 150 145 Maximum Allowable Case Temperature (°C) Average Forward Current (A) 45354 0302520151050 30° 60° 90° 120° 180° 40EPS16 RthJC (DC) = 0.6 K/W Conduction angle Ø 150 140 130 120 110 100 Maximum Allowable Case Temperature (°C) Average Forward Current (A) 10 20 60 70304 05 00 DC 30° 60° 90° 120° 180° 40EPS16 RthJC (DC) = 0.6 K/W Ø Conduction period Maximum Average Forward Power Loss (W) Average Forward Current (A) 1051 5 2 0 4025 30 350 RMS limit 180° 120° 90° 60° 30° 40EPS16 TJ = 150 °C Conduction angle Ø Maximum Average Forward Power Loss (W) Average Forward Current (A) 10 20 60 70304 05 00 DC 180° 120° 90° 60° 30° RMS limit 40EPS16 TJ = 150 °C Ø Conduction period 100 1000 Instantaneous Forward Current (A) Instantaneous Forward Voltage (V) 0.5 1.5 2.5 TJ = 25 °C TJ = 150 °C 40EPS16 500 450 400 350 300 250 200 150 100 Peak Half Sine Wave Forward Current (A) Pulse Train Duration (s) 10.01 0.1 40EPS16 versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied Maximum non-repetitive surge current
www.vishay.com For technical questi ons, contact: diodes-tech@vishay.com Document Number: 94344
4 Revision: 23-Apr-08
40EPS16PbF High Voltage Series Vishay High Power Products Input Rectifier Diode, 40 A Fig. 7 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE 0.01 0.1 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) ZthJC - Transient Thermal Impedance (°C/W) Steady state value (DC operation) Single pulse D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 40EPS16 - Current rating (40 = 40 A) - Circuit configuration: - Package: - Type of silicon: - Voltage rating (16 = 1600 V) None = Standard production PbF = Lead (Pb)-free E = Single diode P = TO-247AC modified S = Standard recovery rectifier Device code 513 24
40 E P S 16 PbF
LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95253 Part marking information http://www.vishay.com/doc?95255
www.vishay.com Vishay Semiconductors Revision: 21-Jun-11 1 Document Number: 95253 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DIMENSIONS in millimeters and inches Notes (1) Dimensioning and tolerance per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c D1 13.08 - 0.515 - 4 S 5.51 BSC 0.217 BSC E N (2) (3) (4) (4) (2) R/2 B 2 x R S D See view B 2 x e b43 x b 2 x b2 LC (5) L1 1 2 3 Q D A A A C A (6) ΦP (Datum B) ΦP1 D1 (4) View A - A Thermal pad DD E E C C View B (b1, b3, b5) Base metal (b, b2, b4) Section C - C, D - D, E - E (c) Planting Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode
0.10 A CM M
Ø K B DM M
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