2N5954 ETC

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JEDEC TO·66 H·1340 JEDECTO·66 With I ntegral Heat Radiator H·1470A Power Transistors 2N5954 2N6372 2N6467 40829 2N5955 2N6373 2N6468 40830 2N5956 2N6374 40831 Silicon N-P-N and P-N-P Medium-Power Transistors General·Purpose Types for Switching Applications in Military, Industrial, and Commercial Equipment .Features

  • 2N5954. 2N5955, 2N5956 complements to 2N6372. 2N6373, 2N6374
  • Low saturation voltages
  • Maximum-safe-area"of-operation curves
  • Thermal-cycle ratings
  • Hermetically·sealed JEDEC TO·66 package • High gain at high current RCA·2N5954. 2N5955, 2N5956. 2N6467. and 2N646sA are multiple·epitaxial p·n·p transistors. RCA·2N6372. 2N6373, and 2N6374- are multiple·epitaxial n·p·n transistors. Theyare complements to 2N5954. 2N5955, and 2N5956. These devices differ in voltage ratings and in the currents at which the para· meters are controlled. All are supplied in the JEDEC TO·66 and 40831, respectively. The other devices may be obtained with heat radiators on special order. Radiator versions are in· tended for printed·circuit·board applications, and differ elec· trically from their basic counterparts only in device dissipation (5.8 W up to 25°C ambient! and thermal resistance (30°CIW max. at TA = 25°C). package. Types 2N5954, 2N5955, and 2N5956 are available with factory·attached heat radiators as RCA types 40829, 40830.
  • Formerlv RCA Dev. Nos. TA7264, TA7265, TA7266, TA8710, and TA8709. respectively.
  • Formerly RCA Dev. Nos. T A8352, T A8353. and TA8354, respectively. P·N·P COLLECTOR·TO·EMITTER VOLTAGE: * With 1.5 volts (V BE) of reverse bias, and external With external base-ta-emitter TRANSISTOR DISSIPATION: *TEMPERATURE RANGE: *PIN TEMPERATURE (During Soldering): At distances ~ 1/32 in. 10.8 mm) from V CER V CEO V EBO IC IB 2N5956. 2N5955. 2N5954. 2N6467. 40831. 40830. 40829. 50 70 90 110 50 70 90 110 45 65 B5 105 40 60 80 100 5 5 5 6 6 6 4 2 2 2 2 40 40 40 40 12N6374) (2N6373) (2N6372) (2N6467) (2N5956) (2N59551 (2N59541 5.8 5.8 5.8 (408311 (40830) (408291 See Figs. 1, 2, and 3.
  • 65 to +200
  • +235 III In accordance with JEDEC.registration data format JS-6-RDF-2 (all types except 40829, 40830, and 40831)
  • For ~n-p devices, voltage and current values are ne~tive. 264 130 V 130 V 125 V 120 V 5 V 4 A 2 A 40 w (2N64661 9·74

ELECTRICAL CHARACTERISTICS, At Case Temperature (TC) = 25'C unless otherwise specified TEST CONDITIONs+ LIMITS CHARACTERISTIC SYMBOL VOLTAGE Vdc VCE VBE Collector Cutoff Current: 35 With external base-to·emitter ICER 55 resistance (RBE) = 100 n 75 With base·emitter junction 45 -1.5 reverse-biased, 65 -1.5 (R8E) = lOOn ICEX 85 -1.5 With base-emitter junction 45 -1.5 reverse.biasedb(RBE) = 100 n, 65 -1.5 andTC=150 C 85 -1.5 With base open ICEO 45 Emitter Cutoff Current lEBO -5 DC Forward·Current hFE 4 Transfer Ratio 4 Collector·to·Emitter Sustaining Voltage: With base open VCEO(sus) With external base·to· emitter resistance (RBE) = 100 n VCER(sus) With base·emitter junction reverse-biased, (RBE) = 100 n VCEX(sus) -1.5 Base-to-Emitter Voltage: All types

4 All types

2N6372·2N6374 4 Collector·to·Emitter Saturation Voltage VCE(sat) Magnitude of Forward· Current Transfer Ratio Ihfel (f = 1 MHz): 2N6372-2N6374 4 2N5954·56, 40B29·31 4 F.orward·Current Transfer Ratio (f = 1 kHz) hfe 4 Thermal Resistance: Junction-to'case, 2N5954·56, ROJC 2N6372-74 Junction·to·Ambient 40829-40831 ROJA *In accordance With JEDEC registration data format JS-6 RDF-2.

  • For p-n-p devices, voltage and current values are negative. 2N6374 2N6373 2N6372 CURRENT 2N595s+ 2N595s+ 2N5954· UNITS Adc 40831· 40830· 40829· 100 - - - 100 - - jJ.A - - - - - 100 - - - - - 100 - 2 - - - 2 - - mA - - - - - 2 - - - - - 1 3" 20 100 - - - - 2a - - - - 20 100 6a 5 - 5 - 5 - O.la 40b - 60b - SOb - O.la 45b - 65b - 85b - V O.la 50b - 70b - 90b - 3a - 2 - - - - 2.5a - - - 2 - - V 2a - - - - - 2 6" - 3 - 3 - 3 3" 0.3 - 1 - - - - 2a 0.2 - - - - - 1 1 4 - 4 - 4 - -1 5 - 5 - 5 - 0.5 25 - 25 - 25 - - 4.3 - 4.3 - 4.3
  • CIW - 30 - 30 - 30 a Pulsed, pulse duration = 300 P.S, duty factor = 1.8%. b CAUTION: Sustaining voltages V CEO(sus}, V CER(sus), and V CEX(sus) MUST NOT be measured on a curve tracer. (See Figs. 19 & 20), 265

ELECTRICAL CHARACTERISTICS. At Case Temperature IT C) = 25"C unless otherwise specified TEST CONDITIONS LIMITS CHARACTERISTIC SYMBOL VOLTAGE CURRENT UNITS Vdc Adc 2N6467 2N6468 VCE VBE IC IB Min. Max. Min. Max. * Collector Cutoff Current: With external base-to-emitter resistance (RBE) = 100 n -100 - - - -100 * With base-emitter junction reverse-biased and external base- to-emitter resistance (RBE) = -100 1.5 - -100 - - lOOn ICEX -120 1.5 - - - -100 * With base-emitter junction reverse-biased, RBE = lOOn, -100 1.5 - -2 - - and TC = 150°C -120 1.5 - - - -2 With base open ICEO -50 - -1 - - -60 - - - -1 * * Emitter Cutoff Current lEBO 5 - -0.1 - -0.1 DC Forward-Current Transfer Ratio hFE -4 -1.5a 15 150 15 150 -4 _4a 5 - 5 -* * Collector·to-Emitter Sustaining Voltage: -120b With base open VCEO(sus) -O.la -100b - - With external base-to-emitter resistance (RBE) = 100 n VCER(sus) _O.la -105b - -125b - With base-emitter junction reverse-biased and external base-to-emitter resistance (RBE) = lOOn VCEX(sUS) 1.5 -O.la _110 b - -130b - * Base-to-Emitter Voltage VBE -4 _1.5a - -2 - -2 Collector-to-Emitter VCE(sat) -1.5a -0.15 - -1.2 - -1.2 Saturation Voltage _4a -0.8 - -4 - -4 * Magnitude of Common Emitter, Small-Signal Short-Circuit, Forward-Current Transfer Ratio (f = 1 MHz) Ihfel -4 -1 5 - 5 - * Common-Emitter, Small· Signal, Short-Circuit, Forward- Current Transfer Ratio Thermal Resistance: Junction-ta-case ROJC - 4.3 - 4.3 a Pulsed, pulse duration = 300 IlS, duty factor = 1.8%. b CAUTION: Sustaining voltages V CEO(sus), V CER(sus), and V CEX(sus} MUST NOT be measured on a curve tracer. (See Figs. 19 and 20). * In accordance with JEDEC registration data format JS-6 RDF-2. 266 TERMINAL CONNECTIONS ALL JEDEC DEVICES Pin 1 - Base Pin 2 - Emitter Case, Mounting Flange - Collector TERMINAL CONNECTIONS 40829,40830,40831 Pin 1 - Base Pin 2 - Emitter Heat Radiator - Collector p.A p.A rnA mA mA V V V °C/W

~ 125 ~ 100 ~~75 ",0 ~ 50 ! a I U H I­z W Ir ::l u VCEO MAX.=- 80V (2N5954, + 80V (2N6372) VCEO MAX·=-IOOV (2N6467) VCEO MAX. =-120 V (2N6468) 4 6 4 6 4 6 COLLECTOR -TO-EMITTER VOLTAGE (VCE)-V 92CS-22477RI Fig. 1 - Maximum operating areas for all types. ;0 .. 0 .. "ar ,,~ " ~f 0 0 o 25 50 75 100 125 ISO 175 200 ~IOO -50 0 .0 100 150 EFFECTIVE CASE TEMP. OR CASE TEMP. I TEFF OR Tel--C 90!CS-21992 Fig. 2 - Current derating curve for all types. CASE OR AMBIENT TEMPERATURE ITe OR TA)--C 92CS-22473 Fig. 3 - Dissipation derating curve for all types. 267

E COLLECTOR-TO-EMITTER VOLTAGE (VeE'-4 v I 200 B ISO I i a ~ g o 0.5 1.5 BASE-YO-EMITTER VOLTAGE (VSE1-V 92LS-353tRI Fig. 4 - Typical input characteristics for all types. • CASE TEMPERATURE (Te). 25·C 10 12 , 0 ,00 ,~o COLLECTOR -TO-EMITTER VOLTAGE (VeE) - v 92LS-3!:127RI Fig. 6 - Typical output characteristics for 811 types. • COLLECTOR-fO-EMITTER VOLTAGE IVe ). 4V ." }' ." Xl 4 ., !!! 3 :: It! i! 2 .. 15 J.Jr. 0.5 I 1.5 8ASE-TO,:,EMITTER VOLTAGE IVBEI-V 92LS-3!129R1 Fig. 8 - Typical tfBnsfer characteristics for all types. • t400 COLLECTOR-lO-EMITTER VOLTAGE (VCEI"' 4V ~ CAJE TEJPERlrUE tTcJ 125·C ~ 200 :t;:c r-- ~ 100 - -~ 80 -40·C - ~ 15 '" 40 ! ~~ 10 g 8 0.01 0.1 10 COLLECTOR CURRENT l1c)-A 92CS-1966B RI Fig. 5 - Typical de beta charaeteristics for 2N6372, 2N6373, and2N6374_ COLLECTOR-TO EMITTER VOL-TAGE (Vc,,) "-4V CAS! TEMJERJTJR~(7: ~ 400 ffi -£t!~ !;) 200 ~ -~r--. I- , .... 100 ffi 80 -40oCr--- "-'" 60 a ""-6 40 i ~ 20 " " 10 468 468 -0.01 -0.1 -I COL-L-ECTOR CURRENT {IC}-A '\\.\\

  • •• -10 92CS-18009 Fig. 7 - Tvpical dc beta characteristics for 2N5954 - 2N5956 and 40829 - 4083'_

8 COLL-ECTOR-TO- EMITTER VOL-TAGE (VCE)a4 v

~ :_~ASE tEJpE1R1TURE 1.. J. 1 ~.1.l ~ 2 C$. ~ 100 "~ r-.c

  • -40·C :- ~ ~" ::l r--..'" ~ I- ~ , ~ • • ~ , -0.01 -0·1 -I -10 COL-L-ECTOR CURRENT IIC)-A 92CS-22539 Fig. 9 - Typical dc beta characteristics for 2N6467 and 2N6468.
  • For p-n-p devices, voltage and current values are negative. 268

:r: 100 1. 8 i iii t"-~ 15 ->€ "~:;N:{~ ~ • "3. <b: 10' NUMBER OF THERMAL CYCLES 10' 02C~-22414 Fig. to - Thermal-cycling fating chart for all types.

1.4 COLLECTOR SUPPLYYOLTAGE (Vee) --30V

0.2 O· 2 3 COLLECTOR CURRENT (I C I-A 92.CS-24893 Fig. 12 - Typical saturated switching characteristics for 2N6372 - 2N6374. INPUT: HEWLETT-PACKARD MODEL No.214A OR EQUIVALENT 25 F ~.,- INPUT FROM PULSE GENERATOR (PULSE DURATION- 201'1; REP. RATE s 1kHz) VSB a ·4!S V vcc·+30V OUTPUT TO OSCILLOSCOPE TEKTRONIX MODEL No.543A OR EQUIVALENT DEVICE UNDER TEST 92CS-24S95 Fig. 14 - Circuit used to measure saturated switching times for n-p-n types. COLLECTOR-TO-EMITTER VOLTAGE tVCE). 4V X' 20 CASE TEMPERATURE (TC)· 25·C -\\--t-H-l " /"'" :; 10/, ~ er~--i---t-i-tt---t--~~1-r-~~-+~-t1 -:. I w ,. Z " ~ 4 6 B " 6 B 4 6' 0.01 0,1 I COLLECTOR CURRENT lIe I-A 10 92CS-22416 Fig. 11 - Typical gain-bandwidth product for all types. + 1.2 1.0 o.e 0 .• 0.4 0.2 I COLLECTOR SUPPLY VOLTAGE (Vee) "'·30V I CASE TEMPERATURE (TC }=25 6 C : IBI=IB2-Ic/IO TURN-~~ 'TIME Hon) -I -2 -3 COLLECTOR CURRENT (leI - A ~-3536R2 Fig. 13 - Typical saturated switching characteristics for 2N5954 - 2N5956, 2N6467 - 2N6468, and 40829 - 40831. Ie2 'I I j.-ON CONDITION j OUTPUT WAVE FORM 10"1. TIME -,--1-I 92CS--24797 Fig. 15- Oscilloscope display for measurement of switching times for n-p-n types.

  • For p-n-p devices, voltage and current values are negative. 269

INPUT: HEWLETT-PACKARD MODEL No.214A OR EQUIVALENT 25 F INPUT FROM PULSE GENERATOR (PULSE DURATION- 20"s; REP. RATE = 1kHz) VCC~-30V OUTPUT TO OSCILLOSCOPE TEKTRONIX MODEL No.543A OR EQUIVALENT DEVICE UNDER TEST 92CS-24894 Fig. t 6 - Circuit uSld to measure saturated switching times for p-n-p types. Fig. 17 - Oscilloscope display for measurement of switching times for p-n-p types. 120.0 IW I I 6.3V I I 60Hz I I CHOPPER TYPE MERCURY RELAY p a B JML BI3oo, CLARE rOZB, OR EQUIVALENT lOOn 1/2W CASE TEMPERATURE (Tel = 2.5OC INDUCTANCE III = 3 mH I '" e ~ 8 LJ~ 2.1i._ BASE-TO-EMITTER VOLTAGE (VSE)-V 92LS-3537RI Fig. 18 - Minimum reverse-bias second-breakdwon characteristic for all types. • +VcC=12V OSCILLOSCOPE GND. INPUT HeRtz. HEWLETT-PACKARD MODEL No. 130B, OR EQUIVALENT ~Vcc 92CS-22469 "* PULSE CURRENT (I p I RANGE MUST 8E 0.2-0·4A gw ABC 0 E ABC 0 E ABC 0 E ~ 100 . 100 100 u o 60 100 0 65 105 0 10 110 40 eo 120 45 95 125 50 90 130 COLLECTOR-TO- EMITTER VOLTAGE (VCE)-V .2CS-2247!1 **FOR P-N-P TYPES 2N5954. 2N59S5,,2N5956,2N6467,AND 2N6468, 40829,40&30, AND 40831, REVERSE POLARITY OF The sustaining voltages, VCEO(sus), VCERlsus), and VCExlsus}. are acceptable when the traces fall to the right of point "A" for types 2N5956, 40831, and 2N6374; point "8" for types 2N5955. 40830, and 2N6373; point "C"for types 2N5954, 40829, and 2N6372; point "0" for type 2N6467. and point "e" for type 2N6468. Vee AND BATTERY. Fig. 19 - Circuit used to measure sustaining voltages V CEO(SUS) V CER(susl, and V CEX(susl. Fig. 20 - Oscilloscope display for measurement for sustaining voltBgeI (test circuit shown in Fig. 19).·

  • For p-n-p devices, voltage and current values are negative. 270