400U80

400U_12 VISHAY

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Technical content

Document Number: 93510 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 23-Jun-08 1 Standard Recovery Diodes (Stud Version), 400 A 400U(R) Series Vishay High Power Products

FEATURES

• Wide current range  High surge current capabilities  Stud cathode and stud anode version  Standard JEDEC types  RoHS compliant  Designed and qualified for industrial level TYPICAL APPLICATIONS  Converters  Power supplies  Machine tool controls  High power drives ELECTRICAL SPECIFICATIONS PRODUCT SUMMARY IF(AV) 400 A DO-205AB (DO-9) RoHS COMPLIANT MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS IF(AV) 400 A TC 120 °C IF(RMS) 630 A IFSM

50 Hz 8250

A

60 Hz 8640

50 Hz 340

60 Hz 311

TJ - 40 to 200 °C VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 400U(R) 80 800 900 15120 1200 1300 160 1600 1700

www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 93510

2 Revision: 23-Jun-08

400U(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 400 A Note  The table above shows the increment of thermal resistance R thJC when devices operate at different conduction angles than DC FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current at case temperature IF(AV) 180° conduction, half sine wave 400 A 120 °C Maximum RMS forward current I F(RMS) DC at 110 °C case temperature 630 A Maximum peak, one cycle forward, non-repetitive surge current IFSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 8250 A t = 8.3 ms 8640 t = 10 ms 100 % VRRM reapplied 6940 t = 8.3 ms 7270 Maximum I2t for fusing I 2t t = 10 ms No voltage reapplied 340 kA2s t = 8.3 ms 311 t = 10 ms 100 % VRRM reapplied 241 t = 8.3 ms 220 Maximum I2√t for fusing I 2√t t = 0.1 to 10 ms, no voltage reapplied 3400 kA 2√s Low level value of threshold voltage V F(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.77 V High level value of threshold voltage V F(TO)2 (I > π x IF(AV)), TJ = TJ maximum 0.85 Low level value of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 0.49 mΩ High level value of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.49 Maximum forward voltage drop V FM Ipk = 1500 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 1.62 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating and storage temperature range TJ, TStg - 40 to 200 °C Maximum thermal resistance, junction to case RthJC DC operation 0.15 K/W Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.04 Maximum allowed mounting torque ± 10 % Not lubricated threads 27 N · m Approximate weight 250 g Case style See dimensions - link at the end of datasheet DO-205AB (DO-9) ΔRthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS 180° 0.020 0.013 TJ = TJ maximum K/W 120° 0.023 0.023 90° 0.029 0.031 60° 0.042 0.044 30° 0.073 0.074

Document Number: 93510 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 23-Jun-08 3 400U(R) Series Standard Recovery Diodes (Stud Version), 400 A Vishay High Power Products Fig. 1 - Current Ratings Characteristics F ig. 2 - Current Ratings Characteristics Fig. 3 - Forward Power Loss Characteristics Fig. 4 - Forward Power Loss Characteristics Average Forward Current (A) Maximum Allowable Case Temperature (°C) 100 110 120 130 140 150 160 170 180 190 200 0 50 100 150 200 250 300 350 400 450 30° 60° 90° 120° 180° Conduction Angle 400U/R Average Forward Current (A) Maximum Allowable Case Temperature (°C) 110 120 130 140 150 160 170 180 190 200 0 100 200 300 400 500 DC 30° 60° 90° 120° 180° Conduction Period 400U/R 10 30 50 70 90 110 130 150 170 190 0.2 K/ W 0.3 K/ W 0.4 K/ W 0.6 K/ W

1 K/W

0.1 K/ W

1.8 K/W

RthSA = 0.04 K/ W - De lta R 100 150 200 250 300 350 400 450 500 550 50 100 150 200 250 300 350 400 450 180° 120° 90° 60° 30° RMS Limit Conduction Angle 400U/R Average Forward Current (A) Maximum Average Forward Power Loss (W) Maximum Allowable Ambient Temperature (°C) 100 200 300 400 500 600 700 800 DC 180° 120° 90° 60° 30° RMS Limit Conduction Period 400U/R 10 30 50 70 90 110 130 150 170 190 0.2 K/ W 0.3 K/ W

0.4 K/W

0.6 K/ W 0.1 K/ W RthSA = 0.04 K/ W - Delta R Average Forward Current (A) Maximum Average Forward Power Loss (W) Maximum Allowable Ambient Temperature (°C) 50 150 250 350 450 550 650

www.vishay.com For technical questi ons, contact: ind-modules@vishay.com Document Number: 93510

4 Revision: 23-Jun-08

400U(R) Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 400 A Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic 2000 3000 4000 5000 6000 7000 8000 11 0 1 0 0 400U/R At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 190°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Peak Half Sine Wave Forward Current (A) Number Of Equal Amplitude Half Cycle Current Pulses (N) 1000 2000 3000 4000 5000 6000 7000 8000 9000 0.01 0.1 1 Versus Pulse Train Duration. Maximum Non Repetitive Surge Current 400U/R Initial Tj = 190°C No Voltage Reapplied Rated Vrrm Reapplied Peak Half Sine Wave Forward Current (A) Pulse Train Duration (s) 100 1000 10000 0 . 511 . 522 . 5 400U/R Tj = 25°C Tj = 190°C Instantaneous Forward Voltage (V) Instantaneous Forward Current (A) 0.001 0.01 0.1 0.001 0.01 0.1 1 10 400U/R Steady State Value: RthJC = 0.15 K/W (DC Operation) Square Wave Pulse Duration (s) Transient Thermal Impedance Z thJC (K/W)

Document Number: 93510 For technical ques tions, contact: ind-modules@vishay.com www.vishay.com Revision: 23-Jun-08 5 400U(R) Series Standard Recovery Diodes (Stud Version), 400 A Vishay High Power Products ORDERING INFORMATION TABLE Device code 513 24 40 0 U R 160 D 1 - 40 = Essential part number 2 - 0 = Standard recovery device 3 - U = Stud normal polarity (cathode to stud) 5 - Voltage code x 10 = V RRM (see Voltage Ratings table) 6 - Diffused diode Note: For metric device M16 x 1.5 contact factory - None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95339

Document Number: 95339 For tec hnical questions, contact: indmodules@vishay.com www.vishay.com Revision: 24-Jul-08 1 DO-205AB (DO-9) for 400U(R) Series Outline Dimensions Vishay Semiconductors DIMENSIONS in millimeters (inches) Note

• For metric device: M 16 x 1.5 contact factory 19 (0.75) MAX. 3/4"-16UNF-2A (1) SW 32 Ø 28.5 (1.08) MAX. 16 (0.63) MAX. 9.5 (0.37) MIN. Ø 8.5 (0.33) NOM. 4 (0.16) MAX. 39 (1.53) MAX. C.S. 35 mm² (0.054 s.i.) Glass-metal seal 200 ± 10 (7.87 ± 0.39) 75 (2.95) MIN. 21 (0.82) MAX.

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