3SK265 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
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Technical content
Features
+ Enhancement type. - Easy AGC (Cut off at Vggg=0V). - Small noise figure. + High power gain. - Ideally suited for RF amp of CATV wide-band tuners. Absolute Maximum Ratings at Ta= 25°C unit Drain-to-Source Voltage Vps 15 v Gate1-to-Source Voltage Vois £8 Vv Gate2-to-Source Voltage Voes +8 =#OV Drain Current Ip 30 mA Allowable Power Dissipation Pp 200 mW Channel Temperature Tch 125 °C Storage Temperature Tstg -55to+125 °C Electrical Characteristics at Ta= 25°C min typ max unit Drain-to-Source Voltage Vos Vois=0V,Ve2s=0V,Ips=100nA 15 Vv Gatel-to-Source Cutoff Voltage Voistom Vps=6V,Vges=4V,Ip=100nA 0 07 #13 v Gate2-to-Source Cutoff Voltage Vg2som Vps=6V,Vcis=3V,Ip=100uA 01 #09 16 Vv Gate1 Cutoff Current Ieiss Vois= +6V,Vg2s= Vps=0V +50 nA Gate2 Cutoff Current Igess Va2s= £6V,Vgis=Vps=0V +50 nA Drain Current Ipsx - Vps=6V,Vgis=1.2V,Ve2g=4V 5.0K 24.0% mA Forward Transfer Admittance | Y¥1| Vps=6V,Ip=10mA,Vges=4V, 22 mS f=1kHz Input Capacitance Ciss Moye Vais=0V 4.0 pF Reverse Transfer Capacitance Crss Voes=4V f= 1MHz 0.015 0.03 pF Power Gain PG Vps=6V,Ip=10mA. 23 «(26 dB Noise Figure NF Voas=4V, f= 200MHz 11 22 ¢B %* : The 35K 265 is classified by Ipgx as follows : (unit ; mA) 5.0 5 12.0 10.0 6 24.0 Marking : TJ I rank : 5, 6 A Dsx ran! Package Dimensions 2096A PG, NF Test Circuit (unit: mm) | os 00 al 0.16 .95,, 0. 4 f=200MHt ag ag 4 mo | on so00pe 237 237 0, soa @—1 Soa * 28 “20r “er ce, a a
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420 3-04 0.6 vessot220PF, 29 1: Drain 2:Source I 18ke Tier U ot 3:Gato1 vy iS 4:Gato2 eas vos L: 1mm enamel wire 10mmg SANYO: CP4 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 32295TS (KOTO) BX-1490 Ne4902-1/3
Ip _- Vos Ip - Vos bad — = BV OS= 5V MYT. 16 j A 1.4V] < 20 mane WY) E 2 Vo2s=6.0V: Y 277 ee Se Yi ft Ze eee / | + —J a | a f <— 4 0.18 3 > al Zeer) a eet tt 77] } Ee 9.5 L) 2 4 6 8 0 () 05 10 ay 20 25 Drain-to-Source Voltage,Vps — V Gatel-to-Source Voltage, Vais — V Ip = Veas Q |¥isl - Veis - 4.5V} 22s 1 i if a) cy e-~ 215) —| Ej f--™ | i, fi x i Za ‘i > gn) Le SESS 0 1 2 3 4 5 me oO Os 1.0 15 20 25 Gate2-to-Source Voltage, Vagos — V Gatel-to-Source Voltage,Vgis — V Yisl = 1 iss - 2 3 L¥ss | D TRIS , Ciss_— Vo2s ov LPP 5V} Sa = & g — st gees ET A Nee < o AA NIKIND Py SN SO) Fhe E EZ |Vos=6 © iP XI {NS = Wars: Voos=4V f\\ N = f= 1MHz & % 5 10 5 20 25 % ° 1 2 3 4 Drain Currently — mA Gate2-to-Source Voltage, Vaas — V PG,NF ~ Vo25 2 Pp - Ta . *Wos=6v [| = [p= 10m. PRL eC NC . Y 7 Ee N : \\ ea LIN | TT £0 M n=. & rol N a ; PTL TUN TT : NF 3 Be N “4 poe at TEIN TI V 3 a N fl PP TT IN J =10) l 0 <a ™ C) 1 2 3 4 5 6 oO a a Cy 80 wm 0 “wo Gate2-to-Source Voltage,Vgos — V Ambient Temperature,Ta —°C ee mien TemporaturesTa °C Ne4902-2/3
: MENo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. @ Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO. LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Wi Information (including circuit diagrams and cirouit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. Ne4902-3/3