3SK263 SANYO
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 3
Technical content
Features
+ Enhancement type. + Small noise figure. - Small cross modulation. Absolute Maximum Ratings at Ta= 25°C unit Drain-to-Source Voltage Vps 15 Vv Gate1-to-Source Voltage Vois +8 v Gate2-to-Source Voltage Voes £8 v Drain Current Ip 30 mA Allowable Power Dissipation Pp 200 mW . Channel Temperature Tch 125 °C Storage Temperature Tstg -55to+125 °C Electrical Characteristics at Ta= 25°C min typ max unit Drain-to-Source Voltage Vps Vois=0V,Vges=0VIp=100uA 15 v Gatel-to-Source Cutoff Voltage Voisin Vpos=6V,Veas=4V,Ip=100zA 0 07 138 =~ Gate2-to-Source Cutoff Voltage Voss) Vps=6V,Vcis=3V,Ip=1002A 01 09 16 V Gatel Cutoff Current Igiss Vois= +6V,Vges= Vps=0V £50 nA Gate2 Cutoff Current Igess Voaos= +6V,Vgis=Vps=0V £50 nA Drain Current Ipsx Vps=6V,Vgis=1.5V,Vg2s=4V 2.5K 24% mA Forward Transfer Admittance | Yg1 Vps=6V,Ip=10mA,Vg2g=4V, 14 mS f=1kHz Input Capacitance Ciss [yos= 8%. f=1MHz 2.7 pF Reverse Transfer Capacitance -Crss Vais=0V,Vg2s=4V 0.015 0.03 pF Power Gain PG Vps=6V,Ip=10mA 18 «21 dB Noise Figure NF Voaes= 4V, f= 200MHz 11° 22 4B %* : The 35K 263 is classified by Ipgx as follows : (unit : mA) [25 4 60 | 50 5 120 [100 6 240 Marking : RJ Ipsx rank : 4, 5,6 Package Dimensions 2096A PG, NF Test Circuit (unit: mm) ~ 0.16 f= 200MHz P25,095, 2 ho oe ue | op x 10000 237 237 F 7 0.1 ee ~ “ i ) 478 ~20p, i 187 Ci * of 42 dy verso! 2 xo. lee! {a T* is |s000p Hl Unit (Resistance : 2, 2.3 1:Drain ™ vous o Capacitance : F) at 3 Source L:1mmg enamel wire 10mmg Sy 4:Gate2 Unit (Resistance : 9, Capacitance : F) SANYO: CP4 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 20696YK/63094MT (KOTO) AX-9847 No.4423-1/3
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2 Vps=6v] 7 Vps=6V
t f=1KHz Vas: Voas=4V 2 & Ip=10mA = Pr] , f=1MHz g A. 6.0) ev g Zs 4s ——— fst i | 4 Zz —— a or £ Z 3 5 ~ \\I gq ere aN \\ N N NS 2 & / = 2 Ne Re | . Ez % 5 10 15 20 25 195 0 1 2 3 % Drain Currently — mA Gate2-to-Source Voltage, Vos — V PG,NF - Veas Pp - Ta 30, Wps=6V 4 = 240 Voss: Vo2s= vl & ip= 10m. PG. 200 pe pe CIN . 1 § 160 N PeCCNCOo 10) H 22 & 120) N 3S i a PO/7LLEL ONT z NF a 5 80 me = meat tT PIN | ‘2 40 7 BARES heeeeee “1 < N 105 1 2 3 4 5 6° °% 2 40 Co) 80 100 120 ee) Gate2-to-Source Voltage, Vgos — V Ambient Temperature,Ta ~°C Sm eee eee es nO ieee No,4423-2/3
No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and ail claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. i Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties, This catalog provides information as of February, 1996 . Specifications and information herein are subject to change without notice. No.4423-3/3