3SK241 PANASONIC

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unit: mm 3SK241 GaAs N-Channel MES FET For VHF-UHF amplification n Features l Low noise-figure (NF) l Large power gain PG l Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1: Source 2: Drain 3: Gate2 4: Gate1 Mini Type Package (4-pin) n Electrical Characteristics (Ta = 25°C) Parameter Drain to Source cut-off current Gate 2 to Drain current Gate 1 cut-off current Gate 2 cut-off current Drain cut-off current Gate 1 to Source cut-off voltage Gate 2 to Source cut-off voltage Forward transfer admittance Input capacitance (Common Source) Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Power gain Noise figure Gain reduction Symbol IDSS IG2DO IG1SS IG2SS IDSX V G1SC V G2SC | Yfs | C iss C oss C rss PG NF G R Conditions V DS = 5V, VG1S = 0, VG2S = 0 V G2D = -13V (G1, S = Open) V DS = VG2S = 0, VG1S = -6V V DS = VG1S = 0, VG2S = -6V V DS = 13V, VG1S = -3.5V, VG2S = 0 V DS = 5V, VG2S = 0, ID = 200mA V DS = 5V, VG1S = 0, ID = 200mA V DS = 5V, ID = 10mA, VG2S = 1.5V, f = 1kHz V DS = 5V, VG1S = VG2S = -6V f = 1MHz V DS = 5V, ID = 10mA V G2S = 1.5V, f = 800MHz V DS = 5V, VAGC = 1.5V/-3.5V, f = 800MHz min 8.5 typ 0.4 0.3 0.02 1.5 max -20 -20 -3.5 -3.5 1.2 0.04 2.5 Unit mA mA mA mA mA V V mS pF pF pF dB dB dB n Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate 1 to Source voltage Gate 2 to Source voltage Drain current Gate 1 current Gate 2 current Allowable power dissipation Channel temperature Storage temperature Symbol V DS V G1S V G2S ID IG1 IG2 PD Tch Tstg Ratings 200 150 -55 to +150 Unit V V V mA mA mA mW Marking Symbol: DU 2.8 +0.2 –0.3 1.5 +0.2 –0.3 0.5R 0.950.95 1.9±0.2 2.9±0.2 0.4 +0.1 –0.05 1.1 +0.2 –0.1 0.8 0.4±0.2 0 to 0.1 0.16 +0.1 –0.06

PD ¾ Ta I D ¾ VDS ID ¾ VG1S ID ¾ VG2S | Yfs | ¾ VG1S C iss, Coss ¾ VDS PG ¾ VG1S NF ¾ VG1S PG ¾ VG2S 3SK241 0 160 40 120 80 14020 100 60 400 300 100 250 350 200 150 Ambient temperature Ta (˚C) Allowable power dissipation PD (mW ) 01 2 10826 4 VG2S =0 Ta=25˚C VG1S =0V – 0.3V – 0.6V – 0.9V –1.2V Drain to source voltage VDS (V) Drain current ID (mA ) VG2S =1.0V 0.5V –1.0V – 0.5V VDS =5V Ta=25˚C Gate 1 to source voltage VG1S (V) Drain current ID (mA ) VG1S =1.0V 0.5V – 0.5V – 1.0V VDS =5V Ta=25˚C Gate 2 to source voltage VG2S (V) Drain current ID (mA ) –3 3 21–2 0 –1 VDS =5V f=1kHz Ta=25˚C V G2S =1.5V 1.0V 0.5V Gate 1 to source voltage VG1S (V) Forward transfer admittance |Yfs| (mS ) 0.1 1 10 1000.3 3 30 0.6 0.5 0.4 0.3 0.2 0.1 VG1S =VG2S =–6V f=1MHz Ta=25˚C C iss C oss Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF) VG2S =1.5V 1.0V 0.5V VDS =5V f=800MHz Ta=25˚C Gate 1 to source voltage VG1S (V) Power gain PG (dB) VG2S =1.5V 0.5V 1.0V VDS =5V f=800MHz Ta=25˚C Gate 1 to source voltage VG1S (V) Noise figure NF (dB) –6 6 42–4 0 –2 –60 –20 –40 VDS =5V f=800MHz Ta=25˚C Gate 2 to source voltage VG2S (V) Power gain PG (dB)

ID ¾ VG1S 3SK241 Ta=25˚C –25˚C75˚C VDS =5V VG2S =0 Gate 1 to source voltage VG1S (V) Drain current ID (mA )