3SK181

3SK181 SANYO

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 7

Technical content

Features

+ Enhancement type + Easy AGC (Cut off at Vg2s= OV) —t . High power gain and low noise figure —_ + High forward transfer admittance — Absolute Maximum Ratings at Ta=25°c unit Drain to Source Voltage Vps is ov Gate 1 to Source Voltage V@is fio ov Gate 2 to Source Voltage Vgoq +10 v Drain Current Ip 30 0 mA Power Dissipation Pp 200 mW Channel Temperature Toh 125° °C Storage Temperature Tstg -55 to +125 °C Electrical Characteristics at Ta=25°C min typ max unit Drain to Source Voltage Vos Vo1s=0V,VG2s=0V 15 v Ips=100uA Gate 1 to Source Breakdown V(pR)Glss IG1=10uA, Vps=0V t10 v Voltage Vg2s=0V Gate 2 to Source Breakdown V(pR)G2ss IG2=L0UA,Vpg=0V +10 v Voltage Ve1s=0V Gate 1 to Source Cutoff Ve1s(off) Vps=10V,VG2s=6V 0 0.7 1.3 v Voltage Ip=100uA Gate 2 to Source Cutoff VG2S(0ff) VDS=10V, Vgis=3v 0.109 16 Vv Voltage Ip=100uA, Gate 1 Cutoff current Igiss VG1s=4V ,Vg2s=Vps=0V 50 nA Gate 2 Cutoff Current Igass Ve2s=8V,Ve1is=Vps=0V 50 nA Drain Current Ipsx Vps=10V,Vg1s=1.5V 2.5% 24* mA Ve2s=6V : Continued on next page. *: The 3SK181 is classified by Ipsx as follows (unit:mA): Not : . (note) aking Bg Case Outline 2046 ae (unit :mm) 0s 3-04 016 Fa . | 0.1 + 23 ee isos" [3 2.9 1: Source “fF 2: Drain ki = 4: Gatel 6037K1/4236AT,TS No.2130-1/4 eee

SANYO SEMICONDUCTOR CORP 22£ D M™ 7997076 OOOb98S5 4 ml 3SK181 T-31-25 aE Continued from preceding page. ° min typ max unit Forward Transfer Admittance \\v£s| £=1kHz,Ip=10mA . 18 Vps=0V ,Ve2s=6V Input Capacitance Ciss [Yosm20v, Suez 3.0 pF Reverse Transfer Capacitance crss |Vgis=0V,Vg2s=6V 0.02 0.05. pF Power Gain PG Vpg=10V, Ip=10ma 22 28 aB Noise Figure NF £=100MHz, Vg2g=6V 1.8 3.0 @B Ip - Vos Ip - Vals Fee [TI fuk Moye TI 20) 20 Pa sD SSS SS eS) | rd Pt af aa eltJ7A TEE ee //) Py ty eA ae ae | Bae PCr « WZ tt | él oy Tt tT in| sea § Ae /e ee , Ae ole —t 4} 0 2 4 6 8 10 ° 1 2 EJ + s Drain to Source Voltage,Vps - V Gate 1 to Source Voltage,VGls - V Ip - Vg2s 20 lyfs|_- Vols aot 082! / L ° 4 weissiv {sks pA 2s = f=1kHz Eber at tl VW \\\\AR IX boa e/a “Th WN | i ny ed mo =F ol Lae TTT verscov] | oY aa = 1 ° 2 3 4 5 Gate b to Source Voltage,VG2s - V Gate 1 to’ Source Voltage,Vcls - V 2077 lest - Io Input Admittance yis - f Ds=10V : mer] TTL] | fee vi ee 41 9= ipsa by FO * |} | == ip ae a Se er ae £ 27 : iN Pe ol | J ° 5 10 1S 20 3 % 10 100 a

SANYO SEMICONDUCTOR CORP 22E D M™@ 799707b OOOLS8L & mm 3SK181 T-31-25 ee Forward Transfer Admittance yfs -f Output Admittance yos - f | HF FH ¥ o8-1bv a a a4 oP reset. EL EE ee ee a a By A OS De ' es eee ee OO 2 pi i ae es é a Oe 2 Peet} V a oe ee ee Pr ee EP oe Ha Frequency ,£ -MHZ Prequency,£ - MHZ 7 at aaae = TI Reverse Transfer Admittance yrs - Ip po —_ groomez TT TTT TT VG2S=6' = RE ESE a ee Pg ¢gtT Bate +t agi PT ee ee ee eS ee ee * a SD ce ce A a SC. a a Oe a . H+} — Fee Pf] Peis | Pe Le rea oc aA] i— pf yy Drain Current,Ip - mA ‘Drain Current,Ip - mA Forward Transfer Admittance yfs - Ip Output Adnittance yos - Ip Su Faria TT ttt te }{ {ty ty tt tT s Vegs-ov Lists ttf pcg ttt + - | ey | toe wo tt it ttt! is “CCT ee a Fi a a a ee ' Ht —-FHt opgtterr TT Trt. dr pe a a 2sitt Pry ry welt ETT a Soo er ster a a ees Py yt PP TT yesstey apt ft yyy yyy ajpiftyyt 1 1 : Drain Current,Ip - mA Drain Current,Ip - mA Input Admittance yis - Vp: Reverse Transfer Adnittance yrs - Vps = 1001 r r a a Petr ot. pS AL ity ty i |b 10 w tq | Ve | “ es —— g po 1 = ' Poe pf 7 re y “* eain to source Voltage, vis - v " brain to Source Voltage,Vps - V eee

SANYO SEMICONDUCTOR CORP 22— D mm 7997076 OOOb967? 6 3SK181 T-31-25 ek Forward Transfer Admittance yfs - Vos Output Admittance yos - Vos eel ti] JL sasety ~{f_| es a \\° | oo C4 oot = Cet ep NSS 10 10 ~~ ° Pp 2?) TT SEE {++ [| oe hee : | [ye tL |} yy et 1.0 10 0 w° orain to Source Voltage,Vos - V Drain to Source Voltage,Vps ~ V Forward Transfer Admittance yfs - VG2s 0 PG,NF ~ Ip adjust Vols so that Ip=l0mA is too} Yielded at £-100HHH2 Vos=}0¥,Wo2grs 0 oe P fog $=1001 > nd C7 } . 7. SrA : ; — a Te SA | cI se [} 2 4 6 Ly 10 0 5 10 cy 20 3 Ey) Gate to Source Voltage ,Vg2s - V Drain Current,Ip - mA

10 AGC,NF - VAGC 63

| t+ | SEE LIAL Ie Te ‘0 ee ag oc olf weg TT Vs 3-10) pm pet 3 i mimi | |? ad kdjist Vgig 80 that Ip=l0mA is aL yielded at f=LOOMHz, Vps=l0V, [7 | Vg2g"6V., 40! PG,NF Test Circuit a Vers 180k mp, pb ~20p | 00 Rp sop | i 28 Tb eh Yors 0 Ll: lnm plated wire lOmm$ 4T, tap: 1T from gate side. L2: lmmf plated wire lOmm¢ 6T, tap: lf from drain side. a i

SANYO SEMICONDUCTOR CORP 22— D MM 7997076 OO0b784 5 me T-U-20 CASE OUTLINES OF SURFACE MOUNT TRANSISTORS @All of Sanyo surface mount transistor case outlines are illustrated below. @All dimensions are in mm, and dimensions which are not followed by min. or max. are represented by typical values. @No marking is indicated, Case Outline—[2018A} unit: mm Case Outline—[2038] unit: mm 45 1s at, 3 ic: A "i 3 pes Lees

1 Collector

n E: Emitter

2 SANYO: CP : SANYO: PCP

Case Outline—[2024A] unit: mm Case Outline—[2044] unit: mm

3 O16 $3 23

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4 Dr Drain bid 8 1 Source

aia ‘SANYO! DP6B ial Gl: Gate 1 Case Outline—[2030A] unit: mm Case Outline~[2060] unit: mm

40 Fy 046

Hn Ey [hee G: Gate waar ‘SANYO: DP6B- 08 SANYO: CP

Ey ~~ oo J SANYO SEMICONDUCTOR CORP 22— D mm 7997076 OOOL7SS 7 me Case Outline—[2057] unit: mm ‘Case Outline—[2066] unit: mm 7-4 220 3 " & : Sacer ce 52 ; Bese? 3 ee ‘O: Ora! ‘SANYO: CPS fjta savor NCP Timaaice ‘ . Case Outline—[2088} unit: mm Case Outline—[2067] unit: mm : . ut i | LyeLeqy Jive | Bb Bie j gag Oe Fone anero 1c He =} HS > Case Outline—[2059] unit: mm Case Outline—[2068] unit: mm a: eee Ct [ha| _ rr Bt Gatlacear : ia Br Emitter STE Sams Case Outline—[2062] unit: mm Case Outline—[2069] unit: mm Fi iL we Ei ; ss sl {Foe S30 at 7

4 SANYO: PCP 58 28 SANYO: SHP

Case Outline—[2065] unit: mm Case Outline—[2070] unit: mm dj 046 - | Ml 0. oupehegh ; . i ft | . cr oy how. Cer cL] a9. At P ci: Gat | 8: source o | ase, - it i Common | a SANYO: CP (re Bel ' 38

SANYO SEMICONDUCTOR CORP 22— D mm@ 7997076 OOOb7ab 9 me - 7 t Case Outline=[20711 unit: nm Te 9/220 3 s ql Oro 3 Te ear eT EI by brain Cose Outline=[2072] unit: mm Be 3 th Creek FRCL EE! o: orate Case Outline—(2073] unit: mm os Jae al am jeg 40,138, 60 2] bi brain 39—Ci«;