3SK180 SANYO

Document overview

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Technical content

Features

  • High power gain and low noise figure. + High forward transfer admittance. Absolute Maximum Ratings at Ta=25°C unit Drain-to-Source Voltage Vps 15 v Gatel-to-Source Voltage Veis +7 v Gate2-to-Source Voltage Veos +7 Vv Drain Current Ip 380 mA Allowable Power Dissipation Pp 200 mW Channel Temperature Tch 125 °C Storage Temperature Tstg —55to +125 °C Electrical Characteristics at Ta=25°C min typ max unit Drain-to-Source Voltage Vps Vois=—4V,Vaos=0V, 15 v Ipg=100uA G1-S Breakdown Voltage Vpr)ciss 1g1=10nA,Vps=0,Vgeg=0V +7 v G2-S Breakdown Voltage Vopnyo2ss Ia2=10nA, Vps=0,Vgig=0V +7 Vv Gatel-to-Source Cutoff Voltage Visio) Vps=10V,Vgos=4V,Ip=100nA -3 v Gate2-to-Source Cutoff Voltage Vgasiom Vps=10V,Vgis=0V,Ip=100nA —25 V Gatel Cutoff Current Igiss Vais= +5V,Vgos=Vps=0V +50 nA Gate2 Cutoff Current Tgess Voos= £5V,Veis=Vps=0V +50) nA Drain Current Ipsg Vps=10V,Vois=0,Vaos=4V 2.5K 24% mA Forward Transfer Admittance | ¥ gl f=1kHz,Ip=10mA, Vpg=10V, 20 mS Voos=4V Input Capacitance Ciss Vps=10V,f=1MHz 3.0 pF Reverse Transfer Capacitance Crss Voeis=0V,Va2s=4V 0.02 0.05 pF Power Gain PG Vps=10V,Ip=10mA 22 © 28 dB Noise Figure NF f=100MHz,Vgeg=4V 18 3.0 4B XX : The 3SK180 is classified by Ipgg as follows : (unit : mA) [25 4 60 | 5.0 5 12.0 Package Dimensions 2046A Marking : DJ (unit : mm) af 0.16 Ipsg rank : 4, 5,6 P2508) GI baal so] oth 14 - Cf * Cy = 4] oe ge 1: Drain 2: Source T 3:Gate1 iS = 4:Gate2 SANYO: CP4 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 90895MO(KOTO)6047K1/4246AT, TS 8-9917 No.2129-1/4

'b_- Vps Vors=4V Ip - Vais Ry eee oT Vps=10V eee ae aoseanen le DEmEne> ces i YA {TE Toa | Yi n/a a, ST | 43S z i //4e 5 ea e/a witty oe ‘2 1 "4 re (eee ee Ao 4 | (a a + —_ yr | tw Pa eS i ee obese BET | Veas=-1v [| Te 0. 7 a 1.5 ° Diain-to-Source Voltage,Vpg ~ V ° ve Gatel-to-Source Voltage, Vois —'V s\\n Za S 2 7 < Poo os > ii ee f~\\ ae 7 PLAS eLi | il | vy é i Boo a] AAA

4 See Ane wt} TS QT

aft TT Hm = Is IN LT TA Tg | SEES AO =0.5 oO 0.5 1.0 1.5 a | 0 1 2 3 4 5 6 7 Gate2-to-Source Voltage, Vos — V Gatel-to-Source Voltage, Vgis — V @ x0 i¥isl - Ip s Input Admittance Vig — f Vos=1VT T TTT TT TT ~ Pama pt sed Wonk TA ; = Lyf Po eee oA CS Ree zs y IS i UENO EREERSRP gw . owt || AT TT PST) eee 5° Ho tet E Jt yy pe Lo C) 5 10 1s 20 25 30 10 100 1000 Drain Current,Ip — mA Frequency,f — MHz Forward Transfer Admittance Y4, — f Output Admittance Yo, — f TTT TT TTT Ty tT Py tt tt Yos=10V 7 en OO wet Tiree EEE a dS a i” Af Te ee, Pepper ey ZAR eee ee eo oA 8 oo ee oe 4 cee ae ol LA to od Tt e “ee Ep 8 a a OO A a A se ee [Pte toma poe Frequency,f — MHz ‘ Frequency, f — MHz No.2129-2/4

Input Admittance Yi, — f Reverse Transfer Admittance Y;, — f PAF) Cea i ie a a gg) tee) PA A NO ae a ee | a ee r e2zt te pa a ee ee LPP On 10 10 0.07 a A | -++— +; + poe se PCa pit a | TT L | LPT eS A a, ae "Drain Current,Ip — mA “Drain Current,Ip — mA Forward Transfer Admittance Y#, — Ip Output Admittance Yo; — Ip T= TooNie [ft tt ri] ] Tt] TTT Tt. AVess=4v ee, A a fa ee a g ee a SO o gs 17 eS ee g | [oT fy oT Py ® pif tt tf s@,it TP Trt ee a A \\, oa a a LTT op TT a

1.0 O41

[| | [| [| gos Vps=10V eo ee 1 4 . Drain Currently — mA Drain Current[p — mA s Input Admittance Vis — Vps Reverse Transfer Admittance Y;; — Vps 100 = ee ee ee

3 TTS ik Vais=4V &

| f= 100MH: ‘ Bi | P| || pate gap [TT tT ot, t rr HH J{#* | eee | ne i ee cr | he , 5 a f re Drain-to Source Voltage,Vpg ey " Drain-to-Source Voltage, Vpg v Forward Transfer Admittance ¥#, — Vps 4 Output Admittance Yo, — Vps T=100MH. = 100MH: com Ld ee Cl 1.0) s — jE N a TEES REE, B10 0 @¢ [QT ts ee \\ {| 1s + é —= b poet te PANE pt} tit f Pee se 3 p ee ee . Vt Drain-to-Source Voltage, Vps — V Drain-to-Source Voltage,Vps — V No.2129-3/4

Forward Transfer Admittance Y4, — Ve2s PG,NF - Ip 30, Li ttre ttt ey ; [tw fT 7 100, rT ttt] 110 25 a SS ST Sa eee ee ytlrt TT tT tT | 12 Yossie jo sc) gittttty Tt 4 eg I | 3 ee eee a Ca A> DO 9 % ps a SP | 510 5 Hl é ee = 2 f=100MH: * xt 2 po noone an aa << 3 2 0 2 4 6 8 O 5 10 15 20 25 30 Gate-to-Source Voltage, Vgas — V Drain Current,Ip — mA

30 AGC,NF ~ Vacc 6m

EN LE? 10 /\\ => —— 2 i : 7 oO 08 1 ? 3 So -10 sat ET ET UPL ens “30! Vps=10V Adjust Vgig 80 that 40 Ip becomes 10mA when Vgz5=4V. PG, NF Test Circuit Lz Vga 0 SHO, 10000F Ey 20PFotpk Ll 9 Input ~20pF ates 20; son O00pF 20, jj 1 000pFI 240 7150kN ” ; d Ver f=100MHz Me) L1: 1mmg plated wire 10mmg 4T, tap: 1T from gate side L2: Immg plated wire 10mme 6T, tap: 1T from drain side MNo products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. WM Anyone purchasing any products described or contained herein for an above-mentioned use shall: ® Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: ® Not impose any responsibility for any fault or negligence. which may be cited in any such claim or litigation on SANYO ELECTRIC CO, LTD,, its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. @ Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant- eed for volume production, SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of September, 1995, Specifications and information herein are subject to change without notice, No.2129-4/4