3SK166

3SK166A SONY

Document overview

• Manufacturer or author: Provided By digicamel.com
• PDF pages: 5

Technical content

Features

• Low voltage operation
• Low noise: NF = 1.2dB (typ.) at 800MHz
• High gain: Ga = 20dB (typ) at 800MHz
• High stability Application UHF band amplifier, oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings(Ta = 25°C)
• Drain to source voltage V DSX 8V
• Gate 1 to source voltage V G1S –6 V
• Gate 2 to source voltage V G2S –6 V
• Drain current I D 80 mA
• Allowable power dissipation PD 150 mW
• Channel temperature Tch 150 °C
• Storage temperature Tstg –55 to +150 °C – 1 – 3SK166A E96Y11-PS GaAs N-channel Dual Gate MES FET Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 2 – 3SK166A 100 (VDS = 5V) VG2S = 1.5V 1.0V 0.5V –0.5V –1.5V40 02468 100 VG1S = 0V –0.4V –0.6V –0.8V –1.4V –1.6V –0.2V –1.0V –1.2V (VG2S = 1.5V) VG1S – Gate 1 to source voltage [V] ID – Drain current [mA] ID vs. VG1S VDS – Drain to source voltage [V] ID – Drain current [mA] ID vs. VDS Typical Characteristics (Ta = 25°C) Electrical Characteristics (Ta = 25°C) Item Drain cut-off current Gate 1 to source current Gate 2 to source current Drain saturation current Gate 1 to source cut-off voltage Gate 2 to source cut-off voltage Forward transfer admittance Input capacitance Feedback capacitance Noise figure Associated gain I DSX IG1SS IG2SS IDSS VG1S (OFF) VG2S (OFF) gm Ciss Crss NF Ga V DS = 8V VG1S = –4V VG2S = 0V VG1S = –5V VG2S = 0V VDS = 0V VG2S = –5V VG1S = 0V VDS = 0V VDS = 5V VG1S = 0V VG2S = 0V VDS = 5V ID = 100µA VG2S = 0V VDS = 5V ID = 100µA VG1S = 0V VDS = 5V ID = 10mA VG2S = 1.5V f = 1kHz VDS = 5V ID = 10mA VG2S = 1.5V f = 1MHz VDS = 5V ID = 10mA VG2S = 1.5V f = 800MHz 1.3 1.2 100 –20 –20 2.0 2.5 µA µA µA mA V V ms pF fF dB dB Symbol Condition Min. Typ. Max. Unit * IDSS classification Product name classification 3SK166A-0 3SK166A-2 IDSS RANK 20 to 80mA 45 to 80mA

– 3 – 3SK166A NF vs. VG1S Ga vs. VG1S 100 (VDS = 5V) VG1S = 0V –0.4V –0.6V –1.0V –1.2V –1.4V –0.2V –0.8V 100 (VDS = 5V) VG2S = 1.5V 1.0V 0.5V –0.5V –1.0V (VDS = 5V, f = 800MHz) VG2S = 0.5V 1.0V 1.5V 0 4 8 1 21 62 0 2 2 1.0 1.5 2.5 3.0 (VDS = 5V, VG2S = 1.5V, f = 800MHz) 0.5 2 6 10 14 2.0 Ga NF 0 0.8 1.6 2.2 1.0 1.5 2.5 3.0 0.5 0.4 1.2 2.0 2.0 (VDS = 5V, VG2S = 1.5V, ID = 10mA) Ga NFmin VG2S = 1.5V (VDS = 5V, f = 800MHz) 1.0V 1.5V VG2S – Gate 2 to source voltage [V] ID – Drain current [mA] ID vs. VG2S VG1S – Gate 1 to source voltage [V] gm – Forward transfer admittance [ms] gm vs. VG1S f – Frequency [GHz] NFmin – Minimum noise figure [dB] NF, Ga vs. f Ga – Gain [dB] VG1S – Gate 1 to source voltage [V] NF – Noise figure [dB] VG1S – Gate 1 to source voltage [V] Ga – Gain [dB] ID – Drain current [mA] NF – Noise figure [dB] NF, Ga vs. ID Ga – Gain [dB]

– 4 – 3SK166A S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) (Z0 = 50Ω ) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.936 0.933 0.930 0.927 0.925 0.922 0.923 0.921 0.926 0.924 0.920 0.921 0.921 0.924 0.925 0.926 0.927 0.924 0.915 0.912 –1.9 –4.0 –6.1 –8.2 –10.2 –12.1 –14.2 –16.3 –18.2 –20.3 –22.3 –24.4 –26.5 –28.9 –31.4 –33.9 –36.9 –39.5 –42.4 –45.0 S22 MAG ANG 0.002 0.005 0.007 0.009 0.010 0.011 0.013 0.013 0.015 0.016 0.016 0.016 0.017 0.017 0.018 0.018 0.020 0.022 0.026 0.028 86.5 87.7 87.3 85.6 81.9 84.3 83.5 82.3 86.3 86.8 88.0 92.4 95.8 97.9 103.3 111.5 119.2 129.3 132.1 136.6 S12 MAG ANG 3.807 3.783 3.726 3.670 3.602 3.507 3.414 3.333 3.244 3.146 3.061 2.965 2.874 2.800 2.709 2.636 2.545 2.464 2.364 2.283 172.8 165.5 158.4 151.5 144.5 137.9 131.4 125.2 118.9 112.8 106.9 101.2 95.4 90.0 84.2 78.5 72.8 67.0 61.3 55.8 S21 MAG ANG 0.996 0.988 0.969 0.948 0.927 0.899 0.873 0.845 0.816 0.785 0.754 0.723 0.694 0.669 0.643 0.621 0.601 0.583 0.565 0.545 –5.0 –9.8 –14.8 –19.8 –24.6 –29.3 –33.5 –37.5 –41.2 –44.5 –47.6 –50.3 –53.2 –55.6 –58.1 –60.4 –62.3 –64.5 –66.6 –68.1 S11 MAG ANG Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 7.3 10.6 13.7 16.7 19.5 22.3 24.9 27.5 30.1 32.6 35.2 37.8 40.5 43.3 46.3 49.3 52.6 56.0 59.7 30.3 29.7 29.2 28.7 28.3 27.8 27.4 27.0 26.7 26.3 26.0 25.8 25.5 25.3 25.1 25.0 24.9 24.8 24.7 MAG Rn (Ω ) 0.29 0.41 0.52 0.64 0.75 0.86 0.97 1.07 1.18 1.28 1.39 1.49 1.59 1.68 1.78 1.88 1.97 2.06 2.15 0.89 0.85 0.81 0.77 0.73 0.70 0.67 0.64 0.61 0.59 0.57 0.54 0.52 0.50 0.48 0.45 0.43 0.40 0.38 Gamma OptimumNFmin (dB) ANG

– 5 – 3SK166A Package Outline Unit: mm M-254 SONY CODE EIAJ CODE JEDEC CODE M-254 PACKAGE MASS 0.01g 2.9 ± 0.2 1.9 ( 0.95 )( 0.95 ) 1.1 – 0.1 + 0.2 0.6 2.8 ± 0.21.6 – 0.1 + 0.2 1.8 ( 0.85 )( 0.95 ) 0 to 0.1 0.10 – 0.01 + 0.1 0.6 – 0.05 + 0.1 0.4 – 0.05 + 0.1 1. Source 2. Gate1 3. Gate2 4. Drain