3SK165A SONY

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 5

Technical content

Features

  • Low voltage operation
  • Low noise: NF = 1.2dB (typ.) at 800MHz
  • High gain: Ga = 20dB (typ) at 800MHz
  • High stability Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings(Ta = 25°C)
  • Drain to source voltage V DSX 8V
  • Gate 1 to source voltage V G1S –6 V
  • Gate 2 to source voltage V G2S –6 V
  • Drain current I D 80 mA
  • Allowable power dissipation PD 150 mW
  • Channel temperature Tch 150 °C
  • Storage temperature Tstg –55 to +150 °C – 1 – 3SK165A E96Y12-PS GaAs N-channel Dual Gate MES FET Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 2 – 3SK165A VG 1S – G ate 1 to source voltage [V] ID – Drain current [m ID vs. VG 1S (VD S = 5V) VG 2S = 1.5V 1.0V 0.5V –0.5V –1.5V 10 –1.0V 0 2 4 6 8 VD S – D rain to source voltage [V] ID – Drain current [m ID vs. VD S VG 1S = 0V –0.4V –0.8V –1.0V –1.2V –1.8V –0.2V –0.6V –1.4V –1.6V (VG 2S = 1.5V) Typical Characteristics (Ta = 25°C) Electrical Characteristics (Ta = 25°C) Item Drain cut-off current Gate 1 to source current Gate 2 to source current Drain saturation current Gate 1 to source cut-off voltage Gate 2 to source cut-off voltage Forward transfer admittance Input capacitance Feedback capacitance Noise figure Associated gain I DSX IG1SS IG2SS IDSS VG1S (OFF) VG2S (OFF) gm Ciss Crss NF Ga V DS = 8V VG1S = –4V VG2S = 0V VG1S = –4V VG2S = 0V VDS = 0V VG2S = –4V VG1S = 0V VDS = 0V VDS = 5V VG1S = 0V VG2S = 0V VDS = 5V ID = 100µA VG2S = 0V VDS = 5V ID = 100µA VG1S = 0V VDS = 5V ID = 10mA VG2S = 1.5V f = 1kHz VDS = 5V ID = 10mA VG2S = 1.5V f = 1MHz VDS = 5V ID = 10mA VG2S = 1.5V f = 800MHz 0.5 7.5 1.2 100 –20 –20 1.0 2.5 µA µA µA mA V V ms pF fF dB dB Symbol Condition Min. Typ. Max. Unit * IDSS classification Product name classification 3SK165A-0 3SK165A-1 IDSS RANK 20 to 55mA 20 to 35mA

– 3 – 3SK165A VG 2S – G ate 2 to source voltage [V] ID – Drain current [m ID vs. VG 2S (VD S = 5V) VG 1S = 0V –0.4V –0.6V –1.0V –1.2V –1.4V –0.2V –0.8V VG 1S – G ate 1 to source voltage [V] gm – Forward transfer adm ittance [m gm vs. VG 1S (VD S = 5V) VG 2S = 1.5V 1.0V 0.5V –0.5V –1.0V 0 0.8 1.6 2.2 1.0 1.5 2.5 3.0 f – Frequency [G H z] NFm in – M inim um noise figure [dB] N F, G a vs. f 0.5 0.4 1.2 2.0 2.0 Ga – Gain [dB] (VD S = 5V, VG 2S = 1.5V, ID = 10m A) G a N Fm in V G 1S – G ate 1 to source voltage [V] NF – Noise figure [dB] N F vs. VG 1S (VD S = 5V, f = 800M H z) –1.8 VG 2S = 0.5V 1.0V 1.5V VG 1S – G ate 1 to source voltage [V] Ga – Gain [dB] G a vs. VG 1S VG 2S = 1.5V 1.0V 0.5V (VD S = 5V, f = 800M H z) 0 4 8 12 16 20 22 1.0 1.5 2.5 3.0 ID – D rain current [m A] NF – Noise figure [dB] N F, G a vs. ID (VD S = 5V, VG 2S = 1.5V, f = 800M H z) 0.5 2 6 10 14 2.0 Ga – Gain [dB] G a N F

– 4 – 3SK165A S-parameter vs. Frequency Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) (Z0 = 50Ω ) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.970 0.968 0.965 0.963 0.961 0.958 0.958 0.958 0.958 0.958 0.954 0.953 0.950 0.949 0.947 0.947 0.946 0.945 0.942 0.941 –0.7 –1.6 –2.4 –3.2 –4.2 –4.9 –5.8 –6.7 –7.3 –8.3 –9.0 –9.6 –10.5 –11.2 –12.1 –12.9 –13.9 –14.5 –15.3 –15.9 S22 MAG ANG 0.001 0.002 0.004 0.004 0.005 0.006 0.007 0.007 0.008 0.008 0.009 0.010 0.011 0.011 0.011 0.011 0.012 0.012 0.013 0.013 73.3 91.6 80.5 85.0 84.9 84.7 83.2 82.5 82.0 78.1 84.4 76.7 77.8 80.9 80.0 80.5 74.3 79.2 80.6 79.5 S12 MAG ANG 2.110 2.105 2.097 2.094 2.083 2.070 2.058 2.048 2.039 2.021 2.008 1.990 1.973 1.954 1.941 1.928 1.901 1.888 1.865 1.846 176.7 173.0 169.7 166.4 162.7 159.5 156.1 152.8 149.4 146.0 142.8 139.6 136.3 133.3 130.0 126.8 123.7 120.6 117.3 114.1 S21 MAG ANG 0.999 0.998 0.991 0.984 0.980 0.970 0.964 0.956 0.949 0.938 0.927 0.911 0.898 0.882 0.868 0.856 0.838 0.824 0.809 0.792 –1.8 –3.7 –5.7 –7.8 –10.0 –12.2 –14.1 –16.1 –17.9 –19.7 –21.3 –22.8 –24.4 –25.8 –27.4 –29.0 –30.2 –31.5 –32.9 –34.1 S11 MAG ANG Noise Figure Characteristics (VDS = 5V, VG2S = 1.5V, ID = 10mA) f (MHz) 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 4.4 6.4 8.2 9.9 11.4 12.8 14.2 15.5 16.7 17.9 19.1 20.3 21.5 22.8 24.2 25.6 27.1 28.8 30.6 63.7 63.0 62.2 61.5 60.7 59.9 59.1 58.4 57.6 56.8 56.0 55.2 54.3 53.5 52.7 51.9 51.0 50.2 49.3 MAG Rn (Ω ) 0.72 0.75 0.81 0.84 0.90 0.94 0.98 1.02 1.07 1.13 1.17 1.22 1.26 1.31 1.38 1.42 1.48 1.52 1.57 0.97 0.95 0.93 0.91 0.88 0.86 0.84 0.83 0.81 0.80 0.79 0.78 0.78 0.77 0.77 0.77 0.76 0.76 0.75 Gamma OptimumNFmin (dB) ANG

– 5 – 3SK165A Package Outline Unit: mm M -254 SO N Y C O D E EIAJ C O D E JED EC C O D E M -254 PAC KAG E M ASS 0.01g 2.9 ± 0.2 1.9 ( 0.95 )( 0.95 ) 1.1 – 0.1 + 0.2 0.6 2.8 ± 0.2 1.6 – 0.1 + 0.2 1.8 ( 0.85 )( 0.95 ) 0 to 0.1 0.10 – 0.01 + 0.1 0.6 – 0.05 + 0.1 0.4 – 0.05 + 0.1 1. Source 2. G ate1 3. G ate2 4. D rain