3SK147 SONY
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 4
Technical content
GaAs N-channel Dual-Gate MES FET a a Description: The 3SK147 is a GaAs N-channel Dual-Gate MES FET for low noise UHF amplifiers and mixers. Low noise, high gain characteristics and low operating voltage are accomplished 4 by optimum mask pattern design. Simplified high frequency ~~ circuits adjustments are made possible by the miniaturized ~ 4 plastic molded package which contributes to reduce A parasitic elements of the device. k=} Features: oe, Low Operating Voltage Low NF: NF = 1.2 dB (typ.) at 800MHz High PG: PG = 22 dB (typ.) at 800 MHz High Stability 19 Protection Diode Included sieoe Applications: [oe | © UHF T.V. Tuner, amplifier, mixer, oscillator. 3 [fs *es . id 8} Absolute Maximum Ratings: (Ta = 25°C) lp +E Drs HO | * Drain to Source Voltage: Vdsx 12 v 5 2 ta-i— HS orer * Gate 1 to Source Voltage: Vgis -5 Vv ee —— * Gate 2 to Source Voltage: Vg2s -5 v on | AP? ~\\ * Drain Current: Id 55 mA R patois | * Power Dissipation: Pch 150 mw (C95) (0.98) | ~ 0-05 * Channel Temperature: Tch +150 °C Let UX) * Storage Temperature: Tstg -55~+150 °C ao202 1=gate 1 2=gate 2 WA unitimm Electrical Characteristics: (Ta =25°C) [Parameter Symbol Condition Min typ. Max. Unit 1d = 20:8 peomee fg pe tL | Vg2s = -4V [avomecmm | om Te TT Gate 1 Cutoff Current Vg2s = 0V yA Vds_=0V [scetoaenowe | om | et Gate 2 Cuttoff Current Vgis=0V Vds_=0V ee ee eS ee Drain Saturation Current Vgis=0V mA Vg2s = OV a ee Gate 1 Pinchoff Voltage Vpt Id =100xA Vv Vg2s = 0V a ee ee Gale 2 Pinchoff Voltage Vp2 Id = 100A v Vgis=0V. Id =10mA Transconductance Vg2s=1.5V (oo atkHz [ Powergan |r Eg [ow | oe | ft we | The specifications are subject to change without notice,
3sKi47 ~ 7 ~ SONY. Output Characteristics: (Ta=25°C, Vg2s = 1.5V, Vgis-= —0.2Vstep) TT TTT TT TT Ty — COCO . Coes ' .CCZeRE SS ¢ o| [feet | e | ZC er tt tt ° Vas - bralnto-Source Voltage - V ° NF, Ga Frequency Dependence: (Vds =5.0V, Vg2s = 1.5V, Ids = 10mA) 6.0 PEN. | ls 8 40 SS 20 ° 2 & Pat | _— | ; 400 880 2000 f- frequency - MHz NF-Id Characteristics: (Vds = 5.0V, Vg2s = 1.5V, Frequency at 450MHz) WwW 1.0 wo 09 2 os i y o7 . 0.6 Id - Drain Current mA
3SK147 = - SONY S-Parameters vs. Frequency Characteristics: (Vds =5V, Vg2s = 1.5V, Id = 10mA) i50 a j25 WN Case j150 i109, /~ LN oY) j250 (~ Se EN Od [~/SQ ° | T-ASSs SY Q F = 100MHz LES on 2.0 15.00 . 1.5—-1.0GHz ~i10 S11 7 ~ i250 5; 100 ~ {60 1909 for 186 Se 500 Ve 1G, By Pooez, L £ 180° Fa t0oMie ie ee Oo 90° S-Parameter Data of FET 3SK147 (50.0 Ohm reference) Frequency |___ Sts | sat] sts MHz [| maa [ana | mac | ana | Maa | ana | mac | ANG |
ask147 SONY. Noise Figure Characteristics: (Vds =5.0V, Vg2s = 1.5V, Ids = 10mA) at 450MHz at 880MHz j50 i50 ies, ss 25, Ces j 0 . j250 POEKTED [~ TASS Xn Ne SSS {| ESBS PSS ’ LY S ie i OEY AY -it —j250 -j10 /_j250 \\ eee } ! ; SEX rs \\ = 28 a ~j25 eae =150 = 150 Vds_ = 5.0V 5 Vg2s = 1.5V vaes rin Ids = 10mA Ids = 10mA Frequency 450 MHz Frequency 880 MHz NE min 0.72.48 Ne mi O77 ae G 8) Mag 0.730 Ang ~95.46 Ga 20.57 08 amma (S); Mag 0.’ ing —35.46° ye Ganvna fe Mey 0.859 Any 246-06" Gamma (S); Mag 0.725 Ang 92,68° at 2000MHz j10 /f WA k jes0 2000 | 1338 |2as}ost0| 73.929 . KIC \\ \\ 6 CARA & Lh NESAss bch a5 Vds = 5.0V \\S \\ ye Vg2s = 1.5V : Ids = 10mA Ga 13.38 dB = j60 Gamma (S); Mag 0.510 Ang 73.92° esse Sony Component Products Division ; By Ss oO INT Y,. West oast.Main Otfice: 23430 Hawthorne Blvd., Suite No. 390, Torrance, California 90505 213-373-9425 © Northwest Office: 1359 Old Oakland Road, San Jose, California 95112 - 408-280:0111 East Coast Office: 15 Essex Road, Paramus, New Jersey 07653 201-368-5020 Printed in US.A. — oe oo oe - ~ a 7-B5+1.7M___