Download PDF3N204 DIGITRON
Document overview
- Manufacturer or author: Provided By digicamel.com
- PDF pages: 2
Technical content
144 Market Street
phone +1.908.245-7200 3N204-3N205 DUAL GATE MOSFET MAXIMUM RATINGS RATING SYMBOL VALUE UNIT Drain-Source Voltage VDS 25 Vdc Drain-Gate Voltage VDG 30 Vdc Drain Current lD 50 mA Reverse Gate Current lG -10 mA Forward Gate Current lGF 10 mA Total Device Dissipation @ TA=25°C Derate above 25°C PD 360 2.4 mW mW/°C Lead Temperature TL 300 °C Operating and Storage Junction Temperature Range TJ, Tstg -65 to +175 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) CHARACTERISTIC SYMBOL MIN MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage (lD=10μA, VG1=VG2=-5.0V) V(BR)DSX 25 - Vdc Gate 1-Source Breakdown Voltage G1=+/- 10 mA) Note 1 V(BR)G1SO +/-6 +/-30 Vdc Gate 2-Source Breakdown Voltage G2=+/-10mA) Note 1 V(BR)G2SO +/-6 +/-30 Vdc Gate 1 Leakage Current G1S=+/-5.0V, VG2S=VDS=0) lG1SS - +/-10 nA Gate 2 Leakage Current G2S=+/-5.0V, VG1S=VDS=0) lG2SS - +/-10 nA Gate 1 to Source Cutoff Voltage DS=15V, VG2S=4.0V, lD=20μA) VG1S(off) -0.5 -4.0 Vdc Gate 2 to Source Cutoff Voltage DS=15V, VG1S=0V, lD=20μA) VG2S(off) -0.2 -4.0 Vdc ON CHARACTERISTICS Zero-Gate-Voltage Drain Current * DS=15V, VG2S=4.0V, VG1S=0V) lDSS* 6 30 mA SMALL SIGNAL CHARACTERISTICS Forward Transfer Admittance DS=15V, VG2S=4.0V, VG1S=0V, f=1.0kHz) Note 2 │Yfs│ 10 22 mmhos Input Capacitance DS=15V, VG2S=4.0V, lD=lDSS, f=1.0Mhz) Ciss TYP.3.0 pF Reverse Transfer Capacitance DS=15V, VG2S=4.0V, lD=10mA, f=1.0MHz) Crss 0.005 0.03 pF Output Capacitance DS=15V, VG2S=4.0V, lD=lDSS, f=1.0MHz) Coss TYP. 1.4 pF FUNCTIONAL CHARACTERISTICS Noise Figure (VDD=18V, VGG=7.0V, f=200MHz) 3N204 (VDS=15V, VG2S=4.0v, lD=10mA, f=450MHZ) 3N204 NF - 3.5 5.0 dB Common Source Power Gain (VDD=18V, VGG=7.0V, f=200MHz) 3N204 (VDS=15V, VG2S=4.0V, lD=10mA, f=450MHz) 3N204 Gps 20 dB Bandwidth DD=18V, VGG=7.0V, f=200MHz) 3N204 (VDD=18V, fLO=245MHz, fRF=200MHz)Note 4 3N205 BW 7.0 4.0 7.0 MHz Gain Control Gate Supply Voltage(Note 3) (VDD=18V, UGPS=300dB,f=200MHz) 3N204 VGG(GC) 0 -2.0 Vdc Conversion Gain (Note 4) (VDD=18V, fLO=245MHz, fRF=200MHz) 3N205 G(conv.) 17 28 dB *PW=30μs, Duty Cycle ≤ 2.0%. 1) All gate breakdown voltages are measured while the device is conducting rated gate current. This insures that the gate voltage limiting network is functioning properly. 2) This parameter must be measured with bias voltages applied for less than five (5) seconds to avoid overheating. 3) UGps is defined as the change in Gps from the value at VGG=7.0V. 4) Amplitude at input from local oscillator is 3 volts RMS. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20120705
phone +1.908.245-7200 3N204-3N205 DUAL GATE MOSFET MECHANICAL CHARACTERISTICS Case: TO-72 Inches Millimeters Dim Min Max Min Max A - 0.230 - 5.840 B - 0.195 - 4.950 C - 0.210 - 5.330 D - 0.021 - 0.530 E - 0.030 - 0.760 F - 0.019 - 0.480 G 0.100 BSC 2.540 BSC H - 0.046 - 1.170 J - 0.0480 - 1.220 K 0.500 - 12.700 - L 0.250 - 6.350 - M 45°C BSC 45°C BSC N 0.050 BSC 1.270 BSC P - 0.050 - 1.270 Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. sales@digitroncorp.com fax +1.908.245-0555 www.digitroncorp.com Rev. 20120705