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New Gensey Semi-Conductor F Products, Ine. ee TELEPHONE: (201) 376-2922 20 STERN AVE. (212) 227-600 SPRINGFIELD, NEW JERSEY 07081 396¢ FAX: (201) 376-8961 U.S.A. 3N204 MAXIMUMRATINGS Rating Symbol [Value Unit 1 Drain an wg | Symbol | Value 6 3N205 Drain-Source Voltage Vos 2 Ga Ph Drain-Gete Volioue | Yog_| 30 | vue 2 ey iy ¢ Drain Current _| to 50 mA Gate F 4 | Rloverse Gate Current —_'¢ | __10 mA woe | Ed Forward Gate Current a oll, 1 source rl | Totel Device Dissipetion w Ta ~ 250 °o 360 mw Case — Derate above 25°C mwwer lls erate ebove 26°C —|.—24__). wee DUAL-GATE MOSFET Total Device Dissipation ww Tq ~ 25°C Po 12 mw Dere ve 25°C va METERS te erate above 25° eee ee N-CHANNEL — DEPLETION ou | SAB | A Toad Temperature ee Ty oy [ser] em | oe Operating and Storege Junction ThTag | osc | <c (70-72) METAL ef ar] $b fie | te Tempereture Range 175 ea _ — a | oe tha Lae] aaa | $98 8 | ae ae” ar aura ve ELECTRICAL CHARACTERISTICS (Ta ~ 25°C unless otherwise noted.) i ae [! +] B Gharecteiate | Sytem Meron] £)RLEHR Ls a in [Mex] unit] ls OFF CHARACTERISTICS. 7 ' a abo Drain-Source Breakdown Voltage Vianiosx | 28 = Vae Wp 10wA Ver = Vor 80M) en ennai Gete 1-Source Breakdown Voltage Vaniciso | =8 =30 | vae {igh = £10 mA) Note 1 _ ee Gate 2-Source Breakdown Voltage VipR)G2s0 +6 +30 Vde {ig2 = +10 mA) Note 1 ne . es es | Gato 1 Leakage Current igiss = 210 nA (1s = #50, Vg2s = Vos = 0) oe on Gate 2 Leakage Current igass = 710 ry (VG2g = *5.0V. Ves = Vps ~ 0) eo a = Gate 1 to Source Cutoff Voltage Versiott) 08 40 Vie Wos = '8V.VG25 = 40V.'p = 204A) -- sn oe ~ Gate 2 to Source Cutoff Voltage | Ve2siott) 02 40 Vae Wos = 18V.VG1s = OVID = 20m) en ee ON CHARACTERISTICS a a Zero-Gate-Voltage Drain Current™ ioss* 6 30 ma os = 18V.Vers=40V.vers= 0M) 0 SMALLSIGNAL CHARACTERISTICS oe oo Forward Transfer Admittance: Vial 10 22 mmbhos (ps = 18V.Vo25 = 40V.Veis = 0V.t = 10H Now2 | . Input Capecitence Ces Typ. oF ps = 15 V. Vazs = 40V, Ip = Ings. = 1.0 Mba) 30 | Reverse Transfer Capacitance Cran 0.006 0.03 pF (ps = 15V. Vozs = 40¥, Ip = 10mA.t = 1.0 Mie) ee . ‘Output Capacitance Cos Twp. oF Wos = 1SV.VG25" 40V.'p = Noss! 10MM) ae FUNCTIONAL CHARACTERISTICS — : ~~ Noise Figure. NF dB (pp = 18V, Vgg = 7.0. = 200 Mie) aNz04 ~ as OS = 15V.VG25~40V.Io = 10mAt~ som ——_anzoa || 50 Common Source Power Gain Gps oy (Wop = 18V, Vag = 7.0: t = 200 Mie) anz04 20 28 Vos = 15ViVG2s = 40V.ip = 10mA.t= 450mm anaes || ta 2 — aw Mie er a (pp = 18 V. Vag ~ 7.0 V.f ~ 200 MHz) 3N3204 20 o> BIE: 3 (pp = 18.1.9 ~ 245 MHz tar = 200MHel (Nowe 4) anos | | 20 d : Gain Control Gate-Supply Voltage (Note 3) Vaca | 0 20 | vde Nes Pe Wop = 18V. aGPS = 0048.4 200M) anon | | a y Conversion Gain (Note 4) iconv) ” 28 8 o Vp = 18. Lo = 245 MHz fag = 200MHe) anos | 7 _ ‘ Quality Semi-Conductors