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—~Z29-Z2 : sNa0s MAXIMUM RATINGS CASE 20-03, STYLE 9 | [rating Symtar [vatve [unt] 0-72 (TO-206AF) [Drain-Source votge =| Sos —(| |S ae| brain [DrainGoteVotage ——SSSsd| Voc | |e Gow [Draincurent S| it | OT ml 3 [Reverse Gate Curent | tg =| 10m on [Forward Gate Current Sid ice | |_| ; Derate above 25°C mwrc ri 4 Subarate [euaemeceremmere= me] Tae | ate | ° Derate above 25°C mwrc DUAL-GATE MOSFET [ead Temperate | | DT Operating and Storage Junction Ty Tstg | —85°C to c N-CHANNEL — DEPLETION ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) [CS rnctoistle | Symbot min | Mex | Unit <6 OFF CHARACTERISTICS at Drain-Source Breakdown Voltage ‘V(BRIDSX Ve lip = 10 nA, Voi = Va2 = -5.0V) Gate 1-Source Breakdown Voltage V(BRIGISO Vde {igi = +10 mA) Note 1 Gate 2-Source Breakdown Voltage V(BRIG2SO Gate 1 Leakage Current (Weis = +5. V, Vazs = Vos = 0) Gate 1 to Source Cutoff Voltage VG1S\\off) Vde (pg = 18 V. Vg2g = 4.0 V, Ip = 20 2A) Gate 2 to Source Cutoff Voltage Wps = 18 V, Vo1s = 0 V. Ip = 20 nA) | ‘ON CHARACTERISTICS (os = 18 V, Vaas = 4.0 V, Varig = OV) SH HGR. GuRACTERTIOS Forward Transfer Admittance Mts! ps = 15 V, Vg2g = 4.0 V, Vois = OV. f = 1.0 kHz} Note 2 Reverse Transfer Capacitance Cs 0.005, Wps = 15 V, Vo2g = 4.0 V, Ip = 10 mA, f = 1.0 MHz) Sa cm tu we (ps = 18 V. Vos = 4.0 V, Ip = loss. f = 1.0 MHz) 14 FUNCTIONAL CHARACTERISTICS (Vpp = 18 V, Vgc = 7.0 V, f = 200 MHz) 3N204 (ps = 16 V, Vo2g = 4.0 V. Ip = 10 mA, f = 450 MHz) 3N204 ce i MOTOROLA SMALL-SIGNAL SEMICONDUCTORS: . 6-85
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3N204, 3N205 T-M-ags ELECTRICAL CHARACTERISTICS (continued) (Ta = 25°C unless otherwise noted.) ’ [Characteristic Sebo [min Tox [unit] Bandwidth WDD = 18 V. Lo = 245 Mitz, (ap = 200 MHz) (Note 4) 3N205 Gain Control Gate-Supply Voltage (Note 3) Vaciec) vac | (Vpp = 18 V, AGPS = 300 dB, f = 200 MHz) 3N204 Pere ieee we [T= | (pp = 18 V, fLo = 245 MHz, fpr = 200 MHz) 3N205, ' *PW = 30 us, Duty Cycle < 2.0%. i (1) Al gate breakdown voltages are measured while the device is conducting rated gate current. This insures thatthe gate voltage limiting | network is functioning propertly. (2) This parameter must bo measured with bias voltages applied for less than five (6) seconds to avoid overheating. (8) AGpg Is defined as the change in Gpg from the value at Vag ~ 7.0V. (4) Amplitude at input from local oscillator Is 3 volts RMS. MOTOROLA SMALL-SIGNAL. SEMICONDUCTORS 6-86
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| anne Sr [vate fon] CASE 2a ORF) | cramSoncavaioge os fs | wae TO-72 (TO-206AF) ae oe Voc. i : All, ‘Total Device Dissipation 4 ETA = 2C 300 mW Lead Temperature, 1/16 From Seated TL c DUAL-GATE MOSFET ‘Surface for 10 seconds UHF COMMUNICATIONS {atorage Channel Tenpersue Range | Tain | [onening amet Tenperatre | Tea | 78 |e | N-cHANNEL — DEPLETION ELECTRICAL CHARACTERISTICS (Ta = 26°C unless otherwise noted.) a ‘OFF CHARACTERISTICS Drain-Source Breakdown Voltage V(BRIDSX Vde lip = 10 wAdc, Vas = ~40 Vde, Ve2s = 4.0 ‘Vde) Saar: Forward Beakdown Vole Tenses {igi = 10 mAdc, Ve2s = Vos = 0) Gate 1 — Source Reverse Breakdown Voltage Viericissr| | -7.0 Vde (igi = —10 mAdc, Va2s = Vos = 0 Gate 2— Source Forward Breakdown Voltage V(eRIG2ssF (ig2 = 10 mAde, Va1s = Vps = 0) ‘Gate 2 — Source Reverse Breakdown Voltage 'V(BR}G2SSR -22 Vde Uigg = —10 mAde, Vais = Vos = 0 Gate 1 — Terminal Forward Current [- | - | Weis = 6.0 Vde, Vers = Vos = 0) Gate 1 — Terminal Reverse Current Iq@issR 1 (Wa1s = ~60 Vde, Va2s = Vos = 9) nAde |] ‘ Weis = -80 Vde, Vezg = Vos = 0. Ta = 160°C) pade | Paaseieeset | . (Gas = 6.0 Vdc, Vers = Vos = 0 See Farina Reverse Current (Vg2g = ~6.0 Vde, Vets = Vos = 0 - -2 | nade (aos = —6.0 Vdc, Vers = Vos = TA = 180°C) - =10 | Ade ON CHARACTERISTICS Wos = 15 Vac, Vars = 0, Ve2s = 4.0 Ve) ‘SMALL-SIGNAL ‘CHARACTERISTICS Forward Transfer Admittance Vis (pg = 18 Vdc, Vaas = 4.0 Vde, Ip = 10 mAdc, f = 1.0 kH2) Tap Copactnce Wps = 15 Vdc, Vaag = 4.0 Vdo, Ip = 5.0 mAde, f = 1.0 MHz) Reverse Transfer Capacitance Crss 0.005 (Vps = 16 Vdc, Vg2g = 4.0 \\Vdo, Ip = 5.0 mAde, f = 1.0 MHz) Supt Capuconce (ps = 18 Vde, Ve2s = 4.0 Vde. Ip = 6.0 maAde, f = 1.0 MHz) MOTOROLA SMALL-SIGNAL SEMICONDUCTORS . 6-87
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i | ELECTRICAL CHARACTERISTICS (continued) (TA = 26°C unless otherwise noted.) . [characters Symbot [min [tye [mex [unit] . FUNCTIONAL CHARACTERISTICS Noise Figure . 1 (ps = 15 Vdc, Vg2g = 4.0 Vide, Ip = 10 mAdc, f = 600 MHz) j Common Source Power Gain (Figure 12) WVps = 15 Vdc, VG2g = 4.0 Vdc, Ip = 10 mAdo, f = 600 MHz) “Bandwidth 7.0 7 {Vpg = 15 Vdc, VG2g = 4.0 Vde, Ip = 10 mAde, f = 500 MHz) t FIGURE 1 — MOSFET CIRCUIT SCHEMATIC - 5 ea @ ) 6 | . TYPICAL SCATTERING PARAMETERS FIGURE 2 — 811, INPUT REFLECTION COEFFICIENT FIGURE 3 ~ S12, REVERSE TRANSMISSION COEFFICIENT ius PREQUENCY, vara FREQUENCY Freer a al Se wee “eg ame 30% 0 wo = ee Rear ra EERO GSN 10° 10 I See Ne BP 10° era INE SN GA Neer! 000 RN | 00 fee von nove ee oe ease q 22008 «190° —«n80 170? tO? 150? ‘1s 160 1700180 190° 20072108. ee { MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 6-88
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ioune 12 - TEST CIRCUIT FOR POWER GAIN, NOISE FIGURE UR and ORDEN ITenMoGULATION DISTORTION oo wa Pyert ex 2a. one Yoo 100% os » a) = 6 ‘4 i i : “3 yy, ; @ Trademark of E.1. Dupont, DeNemours end Co., Inc. a MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 601