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New Gensey Semi-Conductor Products, Ine. al - t-te 20 STERN AVE. TELEPHONE: (201) 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005 N201, 3N202, 3N203 . ELECTRICAL CHARACTERISTICS (continued) (Ta = 25°C unless otherwise noted.) Charactarile [ symbar[ Min [tw [wx [un] : Zommon Source Power Gain | Gps | | | a | (pp = 18 Vde, Vgg = 7.0 Vde, { = 200 MHz) (Figure 1) 3N201 | 15 20 25 (Vob =18 Vie, {Los 245 MHe, ng = 200 Mie) (Figure 2) __3N202 ces) | 18 |i 25 Jandwidth | Bw | (VD = 18 Vde, (ug = 245 MHz, ing = 200 MH) (Figure 2) 3N202 | 45 = 18 (Vpp = 18 Vde, Veg ~ 6.0 Vée, = 45 MHz) (Figure 3) an203 | 30 = 60 3ain Control Gate-Supply Voltagel4) | Yocicc) | Vee op = 18 Vde, SGpy ~ =30 dB, { = 200 MH2) (Figure 1) 3201 | | 9 -10 | -30 (Vpp = 18 Vde, SGpg = -30 48, f = 45 MHz) (Figure 3) 3N203_ | ° -os | -30 TAll gate breakdown voltages are measured while the device is conducting rated gate current. This ensures that the gato-veltage limiting network is functioning property. ' ) Pulse Tost: Pulse Width = 300 us, Duty Cycle « 2.0%. } This parameter must be measured with bias voltages applied for less than § seconds to avoid overheating. } AGpe is dotined as the change in Gpg from the value at VGg = 7.0 volts (9N201) and Vgq « 6.0 volts (3N203) } Power Gain Conversion FIGURE 1 ~ 200-MMz TEST CIRCUIT SCHEMATIC y Fon 3N201 ev os wt IT nec vox rer 360% 0.001 ur ° a }) To 75.8 o 3 o | riom 7511 (CO 001 = f C1 4.030 pF, ERIE Varatie Ceramic, Set tors 22 uF mae 4 C2 L030 pF, ERIE Varable Ceram Set tor © 10BF “a, /, Li a Turns, B14 AWG Cooper, 1/4" 11D, 1/6" Patch ee Yi C2 a Turm, #14 AWG Cooper 74" 11/0" Patch ete? Rec DELEVAN No 189712. 1 Out Fegeeba ong Wilts [s Torlestemben FIGURE 2 ~ 200-MHe-t0-45-MME TEST CINCUIT SCHEMATIC ea bo! Sah seteesinet , ae FOR 3N202 tt vane aan From 50.11 og --s PE eR a epee | Source ror . ry tt coe = ou iy AR Gor te!
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