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TH 3/-2F . HIAXIMUNA BATINGS CASE 20-03, STYLE 9 [ating Symbot [Value J Unit 70-72 (TO-206AF) [DrainSourcevVonage S| Vos | 28 | vee | 1p Vos2 ce [Draincurent TT mae 2 £10 Gate : 210 : al Device Dissipation @ Ta = 25°C aw oh, T Source | Derate above 25°C mwWre 71 cane | Total Device Dissipation @ Te = 26°C 12 Watt ' Derate above 25°C 8.0 mwerc DUAL-GATE MOSFET [ead Temperswe | | toe VHF AMPLIFIER [storage channel Temperature Ronge | Taig | -e5t0+ns | “| NGHANNEL — DEPLETION Refer to MPF201 for additional graphs. ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) [——haractenate Symbol [in] tye J Mex | unr | OFF CHARACTERISTICS Drain-Source Breakdown Voltage Ver)Dsx [ = | Vado lip = 10 wdc, Vg = 0, Vais = Vazs = —5.0 Vde) Gate 1-Source Breakdown Voltage(1) ViBR)GISO 212 Vde (igi = +10 mAdc, VG2g = Vps = 0) Gate 2-Source Breakdown Voltage(1) V(BR)G2SO 6.0 Vde (ig2 = +10 mAde, VGis = Vos = 0) Gate 1 Leakage Current (gig = *5.0 Vdc, Ve2s = Vos = 9) 040 | +10 nAde (ors = —5.0 Vdc, Vas = Vps = 0. Ta = 150°C) = =10_| Adc Gate 2 Leakage Current ‘ors = 259 Vee, Vais = Vos = 0} 2.050 | 10 | nade Wears = —5.0 Vdc, Va1s = Vos = 0, Ta = 150°C) = ~10 Ado Gate 1 to Source Cutoff Voltage Vde ' Wps = 15 Vde, Va2s = 4.0 Vde, Ip = 20 nAdc) Gate 2 to Souree Cutoff Voltage Vaastott (pg = 15 Vdc, Va1s = 0, Ip = 20 nAdc) ON CHARACTERISTICS ‘Zero-Gate-Voltage Drain Current(2) Wps = 15 Vde, Va1s = 0, Va2s = 4.0 Vde) 9N201,3N202 60 30 aNz03 30 15 ‘SMALL-SIGNAL CHARACTERISTICS Forward Transfer Admittance(3) tel (ps = 18 Vde, Va2g = 4.0 Vdc, Vaig = 0,f = 1.0 kHz) 3N201,3N202 3N203 Input Capacitance Ciss (ps = 15 Vdo, Ve2s = 4.0 Vdc, Ip = Ipss.f = 1.0 MHz) Reverse Transfer Capacitance 0.005 °F (ps = 18 Ve, Vo2s = 4.0 Vde, Ip = 10 mAde, f = 1.0 MHz) ‘Output Capacitance Coss W (ps = 18 Vde, Va2s = 4.0 Vac, Ip = Ipss. f = 1.0 MHz) FUNCTIONAL CHARACTERISTICS: Noise Figure (pp = 18 Vdc, Vag = 7.0 Vdc, f = 200 MHz) (Figure 1) 3N201 i (Wop = 18 Vde, Vag = 8.0 Vdc, f = 45 MHz} (Figure: 3) 3N203 a MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 6-80 i t _ _ _ 1
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3N201, 3N202, 3N203 TT 3 ( as . ELECTRICAL CHARACTERISTICS (continued) (Ta = 25°C unless otherwise noted.) a - ‘Common Source Power Gain Gps Wop ~ 18 Ve, Veg = 7.0 Vde, ¢ = 200 MH2} (Figure 1) 3N201 8 20 Wop = 18 Ve, Veg = 6.0 Vde, f = 45 MHz) (Figure 3) 3N203 20 Ps (pp = 18 Vde, fo = 245, MHz, fgg = 200 MHz) (Figure 2) 3N202 Gel5) 16 19 Gandwidth (Wop = 18 Vdc, Vgc = 7.0 Vie, { = 200 MHz) (Figure 1) ‘3N201 50 9.0 (pp = 18 Vde, {yo = 245 MHz, fe = 200 MHz) (Figure 2) 3N202 45 78 Wop = 18 Vde, Vag = 6.0 Vde, f = 45 MHz) (Figure 3) 3N203 3.0 60 Gain Contvot Gate-Supply Voltagel4) Vae Wop = 18 Vdc, AGps = ~30 dB, f = 200 MHz) (Figure 1) 3N201 -30 WVpp = 18 Vde, AGpe = —30 dB, f = 45 MHz) (Figure 3 3N203, 3.0 (All gate breakdown voltages are measured while the device is ‘conducting rated gate current. This ensures that the gete-voltage limiting | teteot is funeioning propery. | (2) Pulse Test: Pulse Width = 300 us, Duty Cycle < 2.0%. (ul on: Pulse Wn ~ 20 los vtages apple for es then Ssacnds to old overheating | (4) AGpg is defined as the change in Gps from the value at VGG = 7.0 volts (3N201) and Vgg = 6.0 volts (3N203). | (5) Power Gain Conversion 1 FIGURE 1 - 2004MHz TEST CIRCUIT SCHEMATIC FOR 3201 Yeo o+18V 0.001 ue + are 46 10k TUT ® 560 0,001 uF © a G) 9750 rom 75:8 (©) : 1 8.0309F, ERIE Varabte Coramic, Set for = 22 oF Sb Se 20 be ente vara Coramle, Set for = 109F $2 %ornn, dua aia Cooper, Wa" 1.0.,/6™ Piteh {2 Store, #14 ANG Cooper, 1/4" 1.0, 1/0" Pitch Rec DELEVAN No. 159712, 1.084 FIGURE 2 — 200-4He-to-45:MMe TEST CIRCUIT SCHEMATIC LecelOxitator Fon anz02 inoutt From 50-2 56 2208 Source ror cy Ge o 45.MHE Fowmut Fs [leu Fa) zoomie (% ° From 758 To 70.0 oure ooo: [ooo foro | 22 tose es ar RP oF 7 ool fa 110% onev ork a oe ct 1.8:7.0 pF, ERIE Variable Ceramic, Sat fr 4.7 8F {91 Arpttuce at Input from Loca Ocltator = 3 V AMS CL eer etc Capper tro. Meech : MOTOROLA SMALL-SIGNAL SEMICONDUCTORS : 6-81
MOTOROLA SC {XSTRS/R F¥ 4b DE e3e7254 0042610 4 I : 6367254 MOTOROLA SC (XSTRS/R F) 96D 82610 D 3N201, 3N202, 3N203 - . T-3l-2 Ss i . FIGURE 3 ~ 45.Hs TEST CIRCUIT SCHEMATIC n203 atk 0.001 uF iN o er . oso. Vea © se =CB) C) "2299 tromson (OIE 7 0.008 at a a = O+18V : L114 Tura, #20 AWG Copper, Close ound 7/32" OD form with : ARNOLD ENGINEERING "2" Tuning Core 6 | TYPICAL CHARACTERISTICS FIGURE 4 — DRAIN CURRENT versus FIGURE 6 — DRAIN CURRENT versus GATE-ONE to DRAIN to SOURCE VOLTAGE SOURCE VOLTAGE a | co sa Ge ae A a ae SLL Fe a oe a OY a FS a 7 A | a a a as ae Sa | A a ' a. Ea bp ee te 1 Ea a / ae ee 2a | ee Fre e/a A Sef | 1 eer tT St a Z| Ae ss oo = ee 4 o 20 40 60 80 0 WwW @ WW 8 20 or “10 05 o 75 10 Vos. BRAN-TOSOURCE VOLTAGE (VOLTS) Vots.GATEONE-TO sounce VOLTAGE (WaLTS) : FIGURE 6 — SMALL-SIGNAL COMMON-SOURCE GATE.ONE FIGURE 7 ~ SMALL-SIGNAL COMMON-SOURCE GATEONE FORWARD TRANSFER ADMITTANCE versus FORWARD TRANSFER ADMITTANCE versus
5 DRAIN CURRENT ‘GATE-ONE to SOURCE VOLTAGE
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3N201, 3N202, 3N203 T: 3) as = Ble FIGURE 8 — SMALL SIGNAL COMMON-SOURCE GATE-ONE FIGURE 9 — SMALL-SIGNAL COMMON-SOURCE GATE-ONE . FORWARD TRANSFER ADMITTANCE versus INPUT AND OUTPUT CAPACITANCE versus : ‘GATE-TWO to SOURCE VOLTAGE GATE-TWO1o-SOURCE VOLTAGE 1 2 Ube eee Jey EEE Fb a ge ee DY 2 ot a 2 a ee F sa] = Ee ea 7 | F a A eG Pec A So} | | se ee | ! eee | : Ey A a Yi] | : FS a a a A Fe a a ee A Fa ce Fe Ss a a TY Soa a a 8 Vrs. OATE-WO o SOURCE VOLTAGE (VOLTS ozs CATE 00 SOURCE VOLTAGE VOLT) TYPICAL CHARACTERISTICS ; FIGURE 11 - COMMON SOURCE POWER GAIN AND FIGURE 10 ~ COMMON-SOURCE POWER GAIN AND SPOT NOISE FIGURE versus GAIN CONTROL SPOT NOISE FIGURE versus DRAIN CURRENT GATE-SUPPLY VOLTAGE ~ 3N201 13 1 aS Se ce a ee es ree —$poee yy . [te esas i] SEAGIG etc, ge : a ee enone 208, #71 wes eS AL ces LIE a a ee ; Be itt te : : i a a a YS sh gf ES a EAs ttt, ol a eR aa GOO To. DRAIN CURRENT ina) aot), GAN CONTROL GATE SUPPLY VOLTAGE VOLTS) FIGURE 19 ~ SMALL SIGNAL COMMON-SOURCE FIGURE 12— COMMONSOURCE POWER GAIN CONVERSION POWER GAIN versus ‘eri DRAIN SUPPLY CURRENT ~ 3NZOt Locat OSCILLATOR INPUT VOLTAGE ~ 3N202 « a a TR = na A a a Se OO SO a OD Pty A ee Zo i 2 fe Fu Fi a a A Ee a a 8 toot eee) Cs Poioth Poeyee eee gree B sa | app eee ee AS ig 3 7 op, DRAIN SUPPLY CURRENT (mA) \\Vam, LOCAL OSCILLATOR INPUT VOLTAGE (VaLTS) i MOTOROLA SMALL-SIGNAL SEMICONDUCTORS g fe 6-83 i . i i
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3N201, 3N202, 3N203 T-3l-as . FIGURE 14 — SMALL-SIGNAL COMMON SOURCE INSERTION POWER GAIN versus GAIN CONTROL . GATESUPPLY VOLTAGE ~ 3N203 “Come, —{_-- Eee : . a or a a | epee FREES i 2 Fe a a i Fi ae A | ' a ae | BS 329 a ey a a a Cs A all AC eee ey A a a oe a Vela), GAIN CONTROL GATE SUeLY VOLTAGE (VOLTS) 6. | ‘TYPICAL CHARACTERISTICS FIGURE 15 - SMALLSIGNAL GATE ONE FORWARD FIGURE 16 ~ SMALLSIGNAL GATE ONE INPUT ‘TRANSFER ADMITTANCE versus FREQUENCY "ADMITTANCE versus FREQUENCY wey COOL ELL) «(fee SS SSS SSS A shvoseey TCE eee Erg a ad a i La os Ss ee es Na Bee ON pe tt 4e 2 of SE Te N snot Aly3 z a OO z HR a Es Coc NE a Z 1h. 2 ES A) ae el go} }1 She =e ee See eee ee a BSS Sra es a eee Se Ea a es 2 Ey seal ca t 2. > Pr 7 A 2° Cre rai rs i wll iat H 2 0 40 ‘100 0 $00 1000 oy 0 109, 200 300 ‘600 : FREQUENCY at) A FREQUENCY (a F : FIGURE 17 ~ SMALL-SIGNAL GATE ONE OUTPUT i ‘ADMITTANCE versus FREQUENCY oe.) Mtg === bal} aa AF Fi pi ee Te ger aes Efe == >—-25 oS a ee —— es 2 os ® 2 sa} t—| ee ee ee ee a Py eet et a ott | Ty titi tT fT Tt dos rT) 203 io ‘ REQUENCY He) a MOTOROLA SMALL-SIGNAL SEMICONDUCTORS 6-84