3LP01M_12 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
  • PDF pages: 7

Technical content

Features

  • Low ON-resistance
  • High-speed switching
  • 2.5V drive Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V DSS - -30 V Gate-to-Source Voltage V GSS ±10 V Drain Current (DC) I D - -0.1 A Drain Current (Pulse) I DP PW≤10μs, duty cycle≤1% - -0.4 A Allowable Power Dissipation P D 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Package Dimensions unit : mm (typ) 7023A-010

71112 TKIM/40908 TIIM TC-00001304/32406PE MSIM TB-00002153/90100 TSIM TA-2006

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network Product & Package Information

  • Package : MCP
  • JEITA, JEDEC : SC-70, SOT-323 Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection SANYO Semiconductors DATA SHEET XA LOT No. LOT No. TL 1 : Gate 2 : Source 3 : Drain SANYO : MCP 2.0 0.4250.4250.3 0.65 2.10.9 1.25 0.3 0.2 0 to 0.08 0.15 3LP01M-TL-E 3LP01M-TL-H

No.6139-2/7 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Drain-to-Source Breakdown Voltage V (BR)DSS ID= - -1mA, VGS=0V - -30 V Zero-Gate Voltage Drain Current I DSS VDS= - -30V, VGS=0V - -1 μA Gate-to-Source Leakage Current I GSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage V GS(off) V DS= - -10V, ID= - -100μA - -0.4 - -1.4 V Forward Transfer Admittance | yfs | VDS= - -10V, ID= - -50mA 80 110 mS Static Drain-to-Source On-State Resistance RDS(on)1 I D= - -50mA, VGS= - -4V 8 10.4 Ω RDS(on)2 I D= - -30mA, VGS= - -2.5V 11 15.4 Ω RDS(on)3 I D= - -1mA, VGS= - -1.5V 27 54 Ω Input Capacitance Ciss VDS= - -10V, f=1MHz 7.5 pF Output Capacitance Coss 5.7 pF Reverse Transfer Capacitance Crss 1.8 pF Turn-ON Delay Time td(on) See specifi ed Test Circuit. 24 ns Rise Time tr 55 ns Turn-OFF Delay Time td(off) 120 ns Fall Time tf 130 ns Total Gate Charge Qg VDS= - -10V, VGS= - -10V, ID= - -100mA 1.43 nC Gate-to-Source Charge Qgs 0.18 nC Gate-to-Drain “Miller” Charge Qgd 0.25 nC Diode Forward Voltage VSD IS= - -100mA, VGS=0V - -0.83 - -1.2 V Switching Time Test Circuit

Ordering Information

Device Package Shipping memo 3LP01M-TL-E MCP 3,000pcs./reel Pb Free 3LP01M-TL-H MCP 3,000pcs./reel Pb Free and Halogen Free PW=10μs D.C.≤1% --4V VIN P.G 50Ω G D ID= --50mA RL=300Ω VDD= --15V VOUT 3LP01M S VIN

No.6139-3/7 --0.01 --0.02 --0.03 --0.04 --0.06 --0.07 --0.08 --0.09 --0.10 --0.4 --0.05 ID -- VDS VGS= --1.5V --3.5V --6.0V --2.0V --0.02 --0.04 --0.06 --0.08 --0.10 --0.12 --0.14 --0.16 --0.18 --0.20 ID -- VGS VDS= --10V IT00077 IT00078 Ta= --25 °C 25°C Drain Current, ID -- A Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Gate-to-Source V oltage, V GS -- V --60 --40 --20 20 40 80 100 120 140 160 VGS = --2.5V , I D= --30mA VGS= --4.0V , I D= --50mA IT00083 IT00084 IT00081 IT00082 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ambient Temperature, Ta -- °C RDS(on) -- Ta Drain Current, ID -- A Drain Current, ID -- A RDS(on) -- ID Drain Current, ID -- mA RDS(on) -- ID --0.01 0.01 --0.1 1.0 0.1 327532 VDS= --10V Ta= --25°C 25°C 75°C --0.01 1.0 --0.1 100 327532 VGS= --2.5V --0.1 --1.0 1000 100 2323 5 7 VGS= --1.5V --25°C --25°C 25°C Ta=75°C Ta=75°C 25°C --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 RDS(on) -- VGS Ta=25°C ID= --30mA --50mA RDS(on) -- ID IT00079 IT00080 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Gate-to-Source V oltage, VGS -- V Drain Current, I D -- A --0.01 1.0 --0.123 5 7 23 100 VGS= --4V Ta=75°C 25°C --25°C | yfs | -- ID Forward Transfer Admittance, | yfs | -- S

No.6139-4/7 IT00085 --0.01 23 5 7 --0.1 1000 100 IT00086 VDD= --15V VGS= --4V tf tr td(off) td(on) Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns --0.01 --0.1 VGS=0V --25 Ta=75 0.20 0.10 0.05 0.15 0 40 120 160 8020 100 140 60 IT02381Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 VDS= --10V ID= --0.1A 1.0 --5 --10 --15 100 --20 --30 --25 f=1MHz IT00087 IT00088 Ciss Coss Crss Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Sourse V oltage, VGS -- V

No.6139-5/7 Embossed Taping Specifi cation 3LP01M-TL-E, 3LP01M-TL-H

No.6139-6/7 Outline Drawing Land Pattern Example 3LP01M-TL-E, 3LP01M-TL-H Mass (g) Unit 0.006 * For reference mm Unit: mm 0.65 0.65 2.1 0.7 1.0

No.6139-7/7PS This catalog provides information as of July, 2012. Specifi cations and information herein are subject to change without notice. Note on usage : Since the 3LP01M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.