3LP01C_09 SANYO

Document overview

  • Manufacturer or author: Provided By digicamel.com
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Technical content

Features

  • Low ON-resistance.
  • High-speed switching.
  • 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS - -30 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID - -0.1 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% - -0.4 A Allowable Power Dissipation PD 0.25 W Channel Temperature Tch 150 °C Storage Temperature Tstg - -55 to +150 °C Electrical Characteristics at Ta=25°C RatingsParameter Symbol Conditions min typ max Unit Drain-to-Source Breakdown Voltage V (BR)DSS ID=- -1mA, VGS=0V - -30 V Zero-Gate Voltage Drain Current IDSS VDS=- -30V, VGS=0V - -1 μA Gate-to-Sourse Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA Cutoff Voltage VGS(off) V DS=- -10V, ID=- -100μA - -0.4 - -1.4 V Forward Transfer Admittance ⏐yfs⏐ VDS=- -10V, ID=- -50mA 80 110 mS RDS(on)1 I D=- -50mA, VGS=- -4V 8 10.4 Ω Static Drain-to-Source On-State Resistance RDS(on)2 I D=- -30mA, VGS=- -2.5V 11 15.4 Ω RDS(on)3 I D=- -1mA, VGS=- -1.5V 27 54 Ω Marking : XA Continued on next page. www.semiconductor-sanyo.com/network

32509 MS IM TC-00001903 / 72606 / 33006PE MS IM TB-00002203 / 90100 TS IM TA-1982

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. SANYO Semiconductors DATA SHEET 3LP01C P-Channel Silicon MOSFET General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network

No.6645-2/4 Continued from preceding page. RatingsParameter Symbol Conditions min typ max Unit Input Capacitance Ciss V DS=- -10V, f=1MHz 7.5 pF Output Capacitance Coss V DS=- -10V, f=1MHz 5.7 pF Reverse Transfer Capacitance Crss V DS=- -10V, f=1MHz 1.8 pF Turn-ON Delay Time t d(on) See specified Test Circuit. 24 ns Rise Time t r See specified Test Circuit. 55 ns Turn-OFF Delay Time t d(off) See specified Test Circuit. 120 ns Fall Time t f See specified Test Circuit. 130 ns Total Gate Charge Qg V DS=- -10V, VGS=- -10V, ID=- -100mA 1.43 nC Gate-to-Source Charge Qgs V DS=- -10V, VGS=- -10V, ID=- -100mA 0.18 nC Gate-to-Drain “Miller” Charge Qgd V DS=- -10V, VGS=- -10V, ID=- -100mA 0.25 nC Diode Forward Voltage V SD IS=- -100mA, VGS=0V - -0.83 - -1.2 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7013A-013 1 : Gate 2 : Source 3 : Drain SANYO : CP 1.5 2.51.1 0.3 0.05 2.9 0.95 0.4 0.1 0.50.5 PW=10μs D.C.≤1% --4V VIN P. G 50Ω G D ID= --50mA RL=300Ω VDD= --15V VOUT 3LP01C S VIN --0.01 --0.02 --0.03 --0.04 --0.06 --0.07 --0.08 --0.09 --0.10 --0.4 --0.05 ID -- VDS VGS= --1.5V --3.5V --6.0V --2.0V --0.02 --0.04 --0.06 --0.08 --0.10 --0.12 --0.14 --0.16 --0.18 --0.20 ID -- VGS VDS= --10V IT00077 IT00078 Ta= --25 °C 25°C Drain Current, ID -- A Drain Current, ID -- A Drain-to-Source V oltage, VDS -- V Gate-to-Source V oltage, V GS -- V

No.6645-3/4 IT00085 --0.01 23 5 7 --0.1 1000 100 IT00086 VDD= --15V VGS= --4V tf tr td(off) td(on) --60 --40 --20 20 40 80 100 120 140 160 VGS = --2.5V , I D= --30mA VGS= --4.0V , I D= --50mA IT00083 IT00084 IT00081 IT00082 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Diode Forward V oltage, VSD -- V Source Current, IS -- A IS -- VSD Drain Current, ID -- A SW Time -- ID Switching Time, SW Time -- ns Ambient Temperature, Ta -- °C RDS(on) -- Ta Drain Current, ID -- A Forward Transfer Admittance, ⏐yfs⏐ -- S ⏐yfs⏐ -- ID Drain Current, ID -- A RDS(on) -- ID Drain Current, ID -- mA RDS(on) -- ID --0.01 --0.1 VGS=0V --25 °C25 Ta=75 --0.01 0.01 --0.1 1.0 0.1 327532 VDS= --10V Ta= --25°C 25°C 75°C --0.01 1.0 --0.1 100 327532 VGS= --2.5V --0.1 --1.0 1000 100 2323 5 7 VGS= --1.5V --25°C --25°C 25°C Ta=75°C Ta=75°C 25°C --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 RDS(on) -- VGS Ta=25°C ID= --30mA --50mA RDS(on) -- ID IT00079 IT00080 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Gate-to-Source V oltage, VGS -- V Drain Current, I D -- A --0.01 1.0 --0.123 5 7 23 100 VGS= --4V Ta=75°C 25°C --25°C

No.6645-4/4 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. PS IT02382Ambient Temperature, Ta -- °C PD -- Ta Allowable Power Dissipation, PD -- W 0.30 0.15 0.20 0.10 0.05 0.25 0 40 120 160 8020 100 140 60 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 VDS= --10V ID= --0.1A 1.0 --5 --10 --15 100 --20 --30 --25 f=1MHz IT00087 IT00088 Ciss Coss Crss Drain-to-Source V oltage, VDS -- V Ciss, Coss, Crss -- VDS Ciss, Coss, Crss -- pF Total Gate Charge, Qg -- nC VGS -- Qg Gate-to-Sourse V oltage, VGS -- V Note on usage : Since the 3LP01C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. This catalog provides information as of March, 2009. Specifications and information herein are subject to change without notice.